Infineon Technologies CY7C1021BNV33L-15VXCT

Overview

CY7C1021BNV33L-15VXCT from Cypress Semiconductor is a 64K × 16-bit (1,048,576-bit) asynchronous CMOS static RAM operating at 3.3 V with 15 ns access time, low active power (576 mW max), and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/ BLE inputs and is used in legacy industrial controllers requiring deterministic, non-volatile-retentive fast memory with TTL-compatible timing.

For engineers reviewing the CY7C1021BNV33L-15VXCT datasheet, CY7C1021BNV33L-15VXCT pinout, CY7C1021BNV33L-15VXCT application, or CY7C1021BNV33L-15VXCT equivalent, this page delivers verified package mapping (44-pin SOJ), byte-enable timing behavior, data retention specs (2.0 V min, 100 µA), and direct alternatives for SRAM replacement in space-constrained embedded systems.

Technical Context

This SRAM implements a full 65,536-word × 16-bit array with separate high-byte (I/O9–I/O16/BHE) and low-byte (I/O1–I/O8/BLE) control, enabling partial-word writes without read-modify-write cycles. Its dual enable architecture allows selective access to upper or lower 8-bit lanes while maintaining full 16-bit bus compatibility.

Timing is defined by five critical parameters: tAA = 15 ns (address-to-data), tRC = 15 ns (read cycle), tPD = 15 ns (CE HIGH to power-down), tHZOE = 7 ns (OE HIGH to high-Z), and tDBE = 7 ns (byte enable to data valid). All AC specs are guaranteed over commercial temperature range (0°C to +70°C) at VCC = 3.3 V ±10%.

Key Specifications

Pinout & Package

Package: 44-pin SOJ (400-mil width), Pb-free, RoHS-compliant. Pin pitch: 1.27 mm. Body width: 10.16 mm. Standard JEDEC MO-050AC footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 64K×16 asynchronous SRAM applications.

Compared with AS6C1008-15TIN and IS61LV1024-15KLI, the CY7C1021BNV33L-15VXCT uniquely combines 2.0 V data retention, true independent byte enables, and 0.5 mA CMOS standby-making it optimal for power-interrupted industrial buffers where hardware-level byte granularity is mandatory.

Availability

CY7C1021BNV33L-15VXCT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, legacy telecom line card caches, and medical imaging frame stores requiring stable component supply and long-lifecycle support.

Supply support for CY7C1021BNV33L-15VXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and communications infrastructure.

The CY7C1021BNV series was engineered specifically for 16-bit parallel bus systems needing deterministic, low-power, pin-compatible SRAM replacements in legacy controller and instrumentation designs.

FAQ

Is CY7C1021BNV33L-15VXCT compatible with 5 V TTL systems?

No. This device operates strictly at 3.3 V (3.0–3.6 V) and is not 5 V tolerant. Input voltages exceeding VCC + 0.3 V may damage the part. Level-shifting circuitry is required for interfacing with 5 V buses, and VIH/VIL thresholds are referenced to 3.3 V-not 5 V logic levels.

Does CY7C1021BNV33L-15VXCT support battery backup for data retention?

Yes-when VCC drops to ≥2.0 V and CE remains asserted HIGH, the device retains data with ICCDR ≤ 100 µA. No external battery circuit is needed; retention is supported natively using the main 3.3 V rail during brown-out conditions, per datasheet Section "Data Retention Characteristics".

Can BHE and BLE be used simultaneously for full 16-bit writes?

Yes. When both BHE and BLE are driven LOW while CE and WE are LOW, all 16 I/O pins (I/O1–I/O16) participate in the write operation. The truth table on page 8 confirms "Write – All bits" mode occurs under exactly these four active-Low conditions.

What is the maximum clock frequency this SRAM can support in a synchronous system?

This is an asynchronous SRAM with no internal clock. Its usable bus frequency depends on system timing margins: with tRC = 15 ns, the theoretical maximum sustained read/write rate is 66.7 MHz-but actual achievable throughput is limited by address setup/hold, CE/OE assertion delays, and PCB trace skew-not by an internal oscillator.