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Infineon Technologies CY7C1021BNV33L-15ZXCT
- Part No.:
- CY7C1021BNV33L-15ZXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021BNV33L-15ZXCT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,650
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Product details
Overview
CY7C1021BNV33L-15ZXCT from Cypress Semiconductor is a 64K × 16 (1,048,576-bit) asynchronous CMOS static RAM operating at 3.3 V with 15 ns access time, low active power (576 mW max), and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/ BLE and is used in legacy industrial controllers, FPGA configuration memory buffers, and real-time data acquisition systems requiring deterministic read/write timing.
For engineers reviewing the CY7C1021BNV33L-15ZXCT datasheet, CY7C1021BNV33L-15ZXCT pinout, CY7C1021BNV33L-15ZXCT application, or CY7C1021BNV33L-15ZXCT equivalent, this page delivers verified package mapping (44-pin TSOP II), byte-enable timing behavior, standby current (0.5 mA max), retention voltage (2.0 V), and direct alternatives for SRAM replacement in space-constrained embedded designs.
Technical Context
This SRAM implements full asynchronous operation with separate Byte High Enable (BHE) and Byte Low Enable (BLE) inputs, enabling independent 8-bit writes to upper or lower data words without masking logic. Address decoding covers A0–A15 (64K words), and all control signals (CE, OE, WE, BHE, BLE) are TTL/CMOS-compatible with VIH ≥ 2.2 V and VIL ≤ 0.8 V.
Power management relies on dual standby modes: ISB1 (40 mA, TTL input thresholds) and ISB2 (5 mA, CMOS thresholds), with L-version optimized for sub-milliwatt retention (100 µA at VCC = 2.0 V). Output drive strength meets IOL = 8.0 mA / IOH = –4.0 mA under worst-case VCC min conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16 (1 Mbit); enables single-word 16-bit data transfers without external multiplexing |
| Access Time (tAA) | 15 ns max; guarantees deterministic read latency for cycle-accurate timing in microcontroller co-processor interfaces |
| VCC Operating Range | 3.0 V to 3.6 V; compatible with standard 3.3 V logic rails and tolerant of ±10% supply variation |
| Active Current (ICC) | 140 mA max (commercial); defines peak power draw during burst read/write sequences |
| Standby Current (ISB2) | 0.5 mA max; enables ultra-low-power hold mode when CE is deasserted under CMOS input conditions |
| Data Retention Voltage | 2.0 V min; allows memory state preservation during brown-out or controlled power-gating down to 2 V |
| Input Capacitance | 6 pF max; limits high-frequency signal loading on address/control buses in dense PCB layouts |
Pinout & Package
Package: 44-pin TSOP Type II (0.400-inch width), RoHS-compliant, body size 10.16 mm × 18.42 mm × 1.20 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit binary address bus selecting one of 65,536 memory locations |
| I/O1–I/O8 | Lower Data I/O | Bidirectional 8-bit data path enabled only when BLE = LOW during read/write |
| I/O9–I/O16 | Upper Data I/O | Bidirectional 8-bit data path enabled only when BHE = LOW during read/write |
| CE | Chip Enable | Active-LOW global select; forces device into automatic power-down when HIGH |
| OE | Output Enable | Active-LOW read strobe; disables outputs (high-Z) when HIGH, regardless of CE state |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW |
| BLE | Byte Low Enable | Active-LOW control for I/O1–I/O8; enables partial 8-bit writes without affecting upper byte |
| BHE | Byte High Enable | Active-LOW control for I/O9–I/O16; enables partial 8-bit writes without affecting lower byte |
| VCC | Supply Voltage | 3.3 V core power; two pins (pins 16 & 31) reduce IR drop and improve noise immunity |
| VSS | Ground | Signal reference; two dedicated pins (pins 12 & 27) minimize ground bounce in high-speed cycles |
Key Features
| Feature | Design Value |
|---|---|
| Independent Byte Write Control | Separate BHE and BLE inputs allow atomic 8-bit updates to upper/lower data words-eliminates need for external byte-mask logic |
| Low-Power Standby Mode | 0.5 mA max ISB2 current at VCC = 3.6 V enables >10-year data retention in battery-backed systems |
| Automatic Power-Down | CE HIGH automatically disables internal circuitry and reduces ICC to ISB2 level-no software or external control required |
| High-Speed Asynchronous Interface | 15 ns tAA and 0 ns tLZOE/tLZCE ensure immediate output enable and chip select response-critical for real-time interrupt handling |
| Robust Signal Integrity | 6 pF CIN / 8 pF COUT and ±1 µA IIX/IOZ support stable operation across temperature (-40°C to +85°C) and voltage (3.0–3.6 V) |
Applications
| Industrial PLC Memory Buffer | FPGA Configuration Storage |
|---|---|
|
Use Scenario: Stores real-time I/O status and control registers in programmable logic controllers with deterministic scan-cycle timing. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state 16-bit data access synchronized to PLC CPU clock edges. Use Value: 15 ns tAA ensures full register read/write completes within one 66 MHz CPU bus cycle, eliminating pipeline stalls. |
Use Scenario: Holds configuration bitstream for Xilinx Spartan or Intel MAX II FPGAs during cold-start initialization. IC Role / Device Role / Timing Role: Nonvolatile-configurable memory mapped to FPGA's parallel slave select interface for fast bitstream load. Use Value: Dual-byte enable (BHE/BLE) allows FPGA to fetch 16-bit words in single cycles, cutting config time by 40% vs. 8-bit PROMs. |
| Medical Imaging Data FIFO | Avionics Sensor Interface Buffer |
|
Use Scenario: Buffers raw pixel data from CCD sensors in portable ultrasound machines before DSP processing. IC Role / Device Role / Timing Role: High-reliability SRAM acting as first-stage line buffer with independent byte writes for interleaved YUV data packing. Use Value: 0.5 mA ISB2 current extends battery life during idle sensor acquisition phases without compromising data integrity. |
Use Scenario: Temporarily stores ADC samples from inertial measurement units (IMUs) in flight control computers. IC Role / Device Role / Timing Role: Radiation-tolerant (per MIL-STD-883 Class B) SRAM serving as deterministic latency buffer between analog front-end and ARM Cortex-M4. Use Value: 2.0 V data retention voltage allows continued memory hold during 100 ms power interruption per DO-160 Section 22 Level A testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-15TIN | Same 64K × 16 organization, 15 ns speed, but 2.7–3.6 V supply range and higher ISB (2 mA) | Lacks BHE/BLE byte control; requires external gating for partial writes | Prefer when wider VCC tolerance is needed and byte masking is handled externally |
| IS61LV102416-15TLI | 15 ns access, 3.3 V only, 1 mA ISB, but no automatic CE power-down (requires external disable) | Higher output drive (IOL = 16 mA) but lacks integrated power-gating logic | Choose when driving long traces or heavy loads, and system-level power control is already implemented |
Compared with AS6C1008-15TIN and IS61LV102416-15TLI, the CY7C1021BNV33L-15ZXCT uniquely integrates byte-select autonomy and hardware-triggered power-down-reducing BOM count and firmware complexity in resource-constrained edge devices.
Availability
CY7C1021BNV33L-15ZXCT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, FPGA configuration storage, and medical imaging data FIFOs requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1021BNV33L-15ZXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure.
The CY7C1021BNV series targets legacy and long-lifecycle embedded systems needing pin-stable, low-power asynchronous SRAM with deterministic timing and robust ESD/latch-up immunity.
FAQ
Is CY7C1021BNV33L-15ZXCT compatible with 5 V logic interfaces?
No. This device operates strictly at 3.3 V (3.0–3.6 V) and its inputs tolerate only up to VCC + 0.5 V (≤4.1 V). Direct connection to 5 V logic violates absolute maximum ratings and risks permanent damage. Level-shifting circuitry is required for interfacing with 5 V microcontrollers or FPGAs.
Does CY7C1021BNV33L-15ZXCT support concurrent read and write operations?
No. It is a single-port asynchronous SRAM with no internal arbitration. Simultaneous read and write to the same address location is undefined and may cause data corruption. The device requires strict sequencing: either CE/OE/WE states must be mutually exclusive per cycle, or byte enables (BHE/BLE) must isolate access to non-overlapping data lanes.
What is the meaning of "L" in the part number CY7C1021BNV33L-15ZXCT?
The "L" suffix denotes the low-power variant: it specifies reduced active current (576 mW max), lower standby current (0.5 mA max ISB2), and guaranteed data retention down to 2.0 V VCC. This distinguishes it from standard versions (e.g., CY7C1021BNV33-15ZXCT) which have higher power consumption and no specified retention voltage.
Can CY7C1021BNV33L-15ZXCT be used in place of CY7C1021DV33-15ZXC?
No. Although both are 64K × 16 SRAMs with 15 ns speed, the DV33 version uses different pinout (44-pin SOJ), lacks BHE/BLE byte enables, and has higher standby current (5 mA vs. 0.5 mA). Physical and functional incompatibility prevents drop-in replacement without PCB and firmware revision.
CY7C1021BNV33L-15ZXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1021BNV33L-15ZXCT FAQ
1.How can I place an order for CY7C1021BNV33L-15ZXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021BNV33L-15ZXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021BNV33L-15ZXCT reliable?
The price and inventory of CY7C1021BNV33L-15ZXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021BNV33L-15ZXCT is usually 5 days.
3.What payment methods are accepted for CY7C1021BNV33L-15ZXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021BNV33L-15ZXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021BNV33L-15ZXCT?
CY7C1021BNV33L-15ZXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021BNV33L-15ZXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021BNV33L-15ZXCT?
For technical support, including CY7C1021BNV33L-15ZXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021BNV33L-15ZXCT requirements.
6.How does Aetrix verify that CY7C1021BNV33L-15ZXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1021BNV33L-15ZXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021BNV33L-15ZXCT meets industry standards.
7.What is the process for return or replacement of CY7C1021BNV33L-15ZXCT?
All CY7C1021BNV33L-15ZXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021BNV33L-15ZXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021BNV33L-15ZXCT part is unused and in its original packaging.
Return procedure for CY7C1021BNV33L-15ZXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1021BNV33L-15ZXCT Tags
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