Infineon Technologies CY7C1021BNV33L-15ZXIT

Overview

CY7C1021BNV33L-15ZXIT from Cypress Semiconductor is a 64K × 16 (1,048,576-bit) asynchronous CMOS static RAM operating at 3.3 V (3.0–3.6 V), with 15 ns maximum access time (tAA), 160 mA max operating current, and dual-byte write control via BHE/ BLE. It supports industrial temperature range (–40 °C to +85 °C) and is used in embedded microcontroller data buffers, FPGA configuration storage, and real-time DSP memory subsystems.

For engineers reviewing the CY7C1021BNV33L-15ZXIT datasheet, CY7C1021BNV33L-15ZXIT pinout, CY7C1021BNV33L-15ZXIT application, or CY7C1021BNV33L-15ZXIT equivalent, key selection criteria include byte-selectable I/O architecture, automatic CE-controlled power-down (ISB2 ≤ 500 µA), TTL/CMOS-compatible input thresholds, and TSOP II / mini BGA package compatibility for space-constrained PCB layouts.

Technical Context

This SRAM implements a fully asynchronous interface with independent high- and low-byte enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its address decoding uses 16-bit address inputs (A0–A15) to access 65,536 words, with I/O0–I/O7 and I/O8–I/O15 driven separately based on byte-enable states.

Power management relies on automatic CE-driven transition to low-power standby (ISB1 ≤ 40 mA, ISB2 ≤ 500 µA), while output drivers enter high-impedance state during deselection (CE HIGH), OE HIGH, or write operations (WE LOW). Timing is specified under 30-pF load with 1 V/ns edge rates and 1.5 V switching thresholds.

Key Specifications

Pinout & Package

The CY7C1021BNV33L-15ZXIT is packaged in a 44-pin TSOP II (Thin Small Outline Package, Type II) with 0.8 mm pitch and standard JEDEC MO-141AC footprint. Pin functions are electrically identical across speed grades and package variants.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with AS6C1008-15TIN and IS61LV1024-15KLI, the CY7C1021BNV33L-15ZXIT uniquely delivers byte-selectable I/O, sub-1 mW standby, and 2.0 V data retention - critical for deterministic real-time systems where partial writes and low-voltage resilience directly impact functional safety compliance.

Availability

CY7C1021BNV33L-15ZXIT is available at Aetrix Electronics and suitable for microcontroller data buffering, FPGA configuration storage, and industrial PLC I/O mapping requiring stable component supply across extended product lifecycles.

Supply support for CY7C1021BNV33L-15ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable system-on-chip solutions for industrial, automotive, and communications markets.

The CY7C1021BNV33 belongs to Cypress's legacy asynchronous SRAM product line, engineered specifically for low-latency, pin-compatible replacement of older 5 V and 3.3 V SRAMs in space- and power-constrained embedded systems.

FAQ

What is the minimum VCC required to retain data in CY7C1021BNV33L-15ZXIT?

The device guarantees data retention down to VCC = 2.0 V (VDR), provided CE remains asserted above VCC – 0.3 V and all inputs are held within valid logic ranges. This specification is validated per JEDEC JESD22-A107 and applies only to the 'L' version (low-power retention grade) as indicated in the ordering code suffix.

Can CY7C1021BNV33L-15ZXIT operate with mixed 3.3 V and 5 V logic interfaces?

No - it is strictly a 3.3 V core device with absolute maximum input voltage of VCC + 0.5 V (≤4.1 V). Direct connection to 5 V logic violates maximum ratings and risks latch-up. Level translation (e.g., TXB0108 or discrete MOSFET translators) is mandatory for interfacing with 5 V buses.

Does this SRAM require an external clock or refresh circuitry?

No - it is a fully static RAM with no internal refresh requirement. All timing is asynchronous and controlled solely by CE, OE, WE, and byte-enable signals. No clock input, PLL, or periodic refresh cycles are needed, simplifying system design and eliminating refresh-induced latency jitter.

How does the automatic power-down feature activate and what current does it draw?

Automatic power-down activates when CE is driven HIGH while all inputs (A0–A15, WE, OE, BHE, BLE) are held at valid logic levels (VIH ≥ 2.2 V or VIL ≤ 0.8 V). In this state, ISB2 draws ≤500 µA at VCC = 3.6 V and TA = 85 °C - verified per AC and DC test conditions in Rev. *G datasheet Section 5.