Infineon Technologies CY7C1021CV26-15VXE

Overview

CY7C1021CV26-15VXE from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 15 ns access time, 2.5–2.7 V supply operation, and automotive-grade temperature range (–40 °C to +125 °C). It supports independent byte write control via BHE/ BLE pins and features automatic CE-controlled power-down for low standby current (10 mA max).

For engineers reviewing the CY7C1021CV26-15VXE datasheet, CY7C1021CV26-15VXE pinout, CY7C1021CV26-15VXE application, or CY7C1021CV26-15VXE equivalent, key selection criteria include tAA = 15 ns read timing, dual-byte enable architecture, TSOP II package compatibility, and automotive-grade thermal reliability.

Technical Context

This SRAM implements a 65,536 × 16-bit memory array with fully decoded address inputs (A0–A15), bidirectional I/O1–I/O16 data bus, and TTL/CMOS-compatible control logic. Its read/write cycle timing is defined by overlapping CE, WE, OE, BHE, and BLE signals - with CE LOW enabling chip selection and WE LOW initiating writes.

The device uses separate byte enables (BHE for I/O9–I/O16, BLE for I/O1–I/O8) to support 8-bit sub-word writes without affecting adjacent bytes. Power management relies on automatic CE-driven transition into low-power ISB2 mode (≤10 mA) when CE is deasserted HIGH under CMOS input conditions.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (400-mil width), surface-mount, lead-free compliant. Pin pitch: 0.8 mm. Body dimensions: 18.4 mm × 10.16 mm × 1.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV102416-15TQLI and AS6C1008-15TIN, CY7C1021CV26-15VXE uniquely delivers automotive-grade reliability, true dual-byte write independence, and strict 2.5–2.7 V operation - critical for safety-critical embedded systems with constrained power domains.

Availability

CY7C1021CV26-15VXE is available at Aetrix Electronics and suitable for engine control units, ADAS radar processors, industrial PLC modules, and automotive infotainment display subsystems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1021CV26-15VXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

CY7C1021CV26 belongs to Cypress's automotive-qualified parallel SRAM product line, engineered specifically for deterministic timing, low-voltage operation, and robustness in safety-critical electronic control units.

FAQ

Is CY7C1021CV26-15VXE pin-compatible with CY7C1021DV26-15VXI?

No. CY7C1021CV26-15VXE uses a 44-pin TSOP II package with specific pin assignments for BHE/BLE and dual VCC/VSS pairs. CY7C1021DV26-15VXI is a 48-ball FPBGA variant with different pinout, ball map, and thermal characteristics - not mechanically or electrically interchangeable without PCB redesign.

Does this SRAM require an external clock or refresh circuitry?

No. CY7C1021CV26-15VXE is a static RAM and operates asynchronously - it has no clock input and requires no refresh cycles. Data retention is maintained as long as VCC remains within 2.5–2.7 V and CE is held HIGH during standby.

Can BHE and BLE be asserted simultaneously for full 16-bit access?

Yes. When both BHE and BLE are LOW, all 16 I/O lines (I/O1–I/O16) are enabled for concurrent read or write operations. This mode supports standard 16-bit bus transactions without software byte masking or splitting.

What is the maximum supported bus frequency when using OE-controlled read cycles?

With tDOE = 7 ns and tHZOE = 7 ns, the minimum OE-controlled read cycle time is 15 ns, supporting up to 66.7 MHz sustained bus throughput. System-level timing must account for PCB trace delays and load capacitance to maintain setup/hold margins.