Infineon Technologies CY7C1021CV26-15VXET

Overview

CY7C1021CV26-15VXET from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 15 ns access time, 2.5–2.7 V supply operation, and automotive-grade temperature range (–40 °C to +125 °C). It supports independent byte write control via BHE/BLE pins and features automatic CE-controlled power-down (ISB2 ≤ 10 mA), enabling low-power embedded memory in safety-critical automotive modules.

For engineers reviewing the CY7C1021CV26-15VXET datasheet, CY7C1021CV26-15VXET pinout, CY7C1021CV26-15VXET application, or CY7C1021CV26-15VXET equivalent, this page delivers verified timing parameters, TSOP II package mapping, byte-select functionality, and real-world use cases in engine control units, ADAS sensor buffers, and infotainment system SRAM expansion.

Technical Context

The device implements a fully asynchronous 64K × 16-bit SRAM array with dual-byte write enable architecture: BLE controls I/O1–I/O8 (lower byte), BHE controls I/O9–I/O16 (upper byte). Address decoding uses 16-bit A0–A15 inputs with no internal multiplexing.

Read and write operations are controlled by active-low CE, OE, and WE with precise setup/hold timing-tAA = 15 ns, tWC = 15 ns, tSD = 8 ns-and tri-state outputs are managed independently per control signal (tHZOE = 7 ns, tHZCE = 7 ns).

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (400-mil width), RoHS-compliant, surface-mountable with standard reflow profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed automotive SRAM applications.

Compared with IS61LV102416-15TQLI and MC1021V26-15VXET, the CY7C1021CV26-15VXET uniquely combines AEC-Q100 Grade 1 qualification, dual-byte write, and guaranteed 15 ns performance across full automotive temperature range-making it the only choice for safety-critical ECU memory where thermal margin and qualification traceability are mandatory.

Availability

CY7C1021CV26-15VXET is available at Aetrix Electronics and suitable for engine control units, ADAS camera modules, and telematics gateways requiring stable component supply across extended automotive product lifecycles.

Supply support for CY7C1021CV26-15VXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor, now part of Infineon Technologies, designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications.

The CY7C1021CV26 belongs to Cypress's automotive-qualified SRAM product line, engineered specifically for deterministic timing, low-voltage operation, and thermal robustness in safety-critical electronic control modules.

FAQ

Is CY7C1021CV26-15VXET compatible with 3.3 V systems?

No. This device operates exclusively within 2.5 V to 2.7 V. Applying 3.3 V violates absolute maximum ratings and risks permanent damage. It is not 3.3 V tolerant-VIH max is VCC + 0.3 V, so at 2.7 V supply, VIH must not exceed 3.0 V. External level shifters are required for interfacing with 3.3 V controllers.

What is the function of NC pins 22, 23, and 28?

Pins 22, 23, and 28 are No Connect-physically unconnected to the silicon die. They must remain unconnected on the PCB; routing traces or applying voltage to these pins may cause signal coupling or mechanical stress. Their presence maintains mechanical symmetry in the TSOP II package mold.

Can CY7C1021CV26-15VXET perform simultaneous read and write on different bytes?

No. The device is strictly asynchronous and single-port: only one operation (read or write) can occur per cycle. While BHE and BLE allow selective byte activation, both cannot be asserted for conflicting operations (e.g., read upper byte while writing lower byte) due to shared address and data paths and internal arbitration limitations.

Does the automatic power-down feature require external circuitry?

No. Power-down activates automatically when CE is driven HIGH, regardless of OE or WE state. ISB2 ≤ 10 mA is achieved solely through internal circuitry-no external enable signals, clocks, or configuration registers are needed. This simplifies power management in battery-sensitive automotive modules.