Infineon Technologies CY7C1021CV26-15ZSXE

Overview

CY7C1021CV26-15ZSXE from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 15 ns access time, 2.5–2.7 V supply range, and automotive-grade temperature operation (–40 °C to +125 °C). It supports independent byte write control via BHE/ BLE, automatic CE-based power-down, and operates in 44-pin TSOP II package. Used in engine control units and ADAS domain controllers requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1021CV26-15ZSXE datasheet, CY7C1021CV26-15ZSXE pinout, CY7C1021CV26-15ZSXE application, or CY7C1021CV26-15ZSXE equivalent, key selection criteria include tAA = 15 ns read timing, dual-byte enable architecture, 220 mW max active power, and automotive qualification per AEC-Q100 Class 0.

Technical Context

This SRAM implements a synchronous, non-volatile-independent interface with separate high- and low-byte write enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Address decoding uses full 16-bit A0–A15 inputs, supporting direct mapping to 16-bit microcontroller data buses.

Power management relies on CE-driven automatic power-down: ISB1 ≤ 15 mA (TTL inputs) and ISB2 ≤ 10 mA (CMOS inputs) during deselection. Output drivers support 1.0 mA sink/source at VOL ≤ 0.4 V and VOH ≥ 2.3 V under 2.5 V min supply.

Key Specifications

Pinout & Package

44-pin TSOP II (400-mil) package with 0.8 mm pitch, JEDEC MO-141AC compliant. Pin 1 index corner marked; lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed automotive SRAM applications.

Compared with IS61LV102416AL-15MLI and AS6C1008-15PCN, CY7C1021CV26-15ZSXE uniquely delivers 2.5–2.7 V operation, full –40 °C to +125 °C qualification, and dual-byte write enables-making it the only option meeting AEC-Q100 Class 0 requirements for powertrain memory subsystems.

Availability

CY7C1021CV26-15ZSXE is available at Aetrix Electronics and suitable for engine control units, ADAS radar processors, and instrument cluster display controllers requiring stable component supply across extended automotive lifecycles.

Supply support for CY7C1021CV26-15ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for automotive, industrial, and IoT markets.

The CY7C1021CV26 belongs to Cypress's automotive-qualified SRAM product line, engineered specifically for deterministic timing, low-voltage operation, and robustness in harsh-temperature environments.

FAQ

Is CY7C1021CV26-15ZSXE pin-compatible with CY7C1021DV26-15ZSXI?

No. CY7C1021CV26-15ZSXE uses a 44-pin TSOP II package with specific pin assignments for BHE/BLE and dual VCC/VSS, while CY7C1021DV26-15ZSXI is a 48-ball FBGA variant with different pinout, ball map, and thermal characteristics. Interchange requires PCB redesign and layout validation.

Does this SRAM retain data during CE HIGH power-down mode?

Yes. The device retains all stored data indefinitely during CE HIGH automatic power-down mode, as SRAM cells remain powered through VCC and require no refresh. Data retention is guaranteed over the full –40 °C to +125 °C operating temperature range.

Can BLE and BHE be asserted simultaneously for full 16-bit writes?

Yes. Asserting both BLE and BHE LOW enables concurrent write operations to I/O0–I/O7 and I/O8–I/O15, resulting in a full 16-bit word write. This is the standard mode for complete word updates and matches typical microprocessor bus behavior.

What is the maximum clock frequency supported for continuous read cycles?

The device supports continuous read cycles up to 66.7 MHz, derived from tRC = 15 ns minimum read cycle time. This assumes proper setup/hold timing compliance, controlled slew rates (<2.6 ns), and load capacitance ≤8 pF on all I/O lines.