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Infineon Technologies CY7C1021CV26-15ZSXET
- Part No.:
- CY7C1021CV26-15ZSXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021CV26-15ZSXET.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,873
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Product details
Overview
CY7C1021CV26-15ZSXET from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 15 ns access time, 2.5–2.7 V supply operation, and automotive-grade temperature range (–40 °C to +125 °C). It supports independent byte write control via BHE/BLE pins and features automatic CE-controlled power-down (ISB2 ≤ 10 mA), enabling low-power operation in engine control units and infotainment head units.
For engineers reviewing the CY7C1021CV26-15ZSXET datasheet, CY7C1021CV26-15ZSXET pinout, CY7C1021CV26-15ZSXET application, or CY7C1021CV26-15ZSXET equivalent, key selection criteria include tAA = 15 ns read timing, dual-byte enable architecture, TSOP II package compatibility, and automotive qualification per AEC-Q100 stress test requirements.
Technical Context
The device implements a fully static 64 K × 16 memory array with separate address decoding for row and column selection, supporting concurrent access to upper and lower data bytes via dedicated BHE and BLE controls. Its TTL/CMOS-compatible input thresholds and bidirectional I/O0–I/O15 lines allow direct interfacing with microcontrollers and DSPs without level-shifting.
Power management relies on CE-driven automatic power-down: when CE is HIGH, ICC drops to ≤10 mA (ISB2) at max VCC and f = 0, while active current remains ≤80 mA under full-speed operation. All timing parameters-including tDOE = 7 ns and tHZOE = 7 ns-are specified over the full –40 °C to +125 °C range at VCC = 2.5–2.7 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64 K × 16 (1,048,576-bit total); enables 16-bit parallel data bus interface without external multiplexing |
| Access Time (tAA) | 15 ns maximum; ensures compatibility with 66 MHz microcontroller buses in real-time control loops |
| Supply Voltage | 2.5 V to 2.7 V only; requires tightly regulated low-voltage rail-no 3.3 V or 5 V operation supported |
| Standby Current (ISB2) | ≤10 mA at VCC = 2.7 V, f = 0; enables <27 mW quiescent power in always-on automotive modules |
| Operating Temperature | –40 °C to +125 °C; qualified for under-hood ECUs and transmission control units per AEC-Q100 |
| I/O Drive Strength | VOL ≤ 0.4 V at IOL = 1.0 mA; guarantees clean logic-low signaling into 50 Ω terminated traces |
| Input Capacitance | 8 pF typical; limits signal integrity degradation on high-speed address/data buses up to 66 MHz |
Pinout & Package
Package: 44-pin TSOP II (400-mil), RoHS-compliant, surface-mount. Pin pitch: 0.8 mm. Body dimensions: 18.4 mm × 10.16 mm × 1.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 65,536 memory locations; no internal latching-requires stable address during CE LOW |
| I/O0–I/O7 | Data I/O (Lower Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW; tri-stated when BLE or CE HIGH |
| I/O8–I/O15 | Data I/O (Upper Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; independent of BLE state |
| CE | Chip Enable (active LOW) | Primary chip select; forces automatic power-down and high-Z I/O when HIGH; must be stable before address setup |
| WE | Write Enable (active LOW) | Controls R/W direction: LOW = write, HIGH = read; timing-critical for tSD = 8 ns data setup requirement |
| OE | Output Enable (active LOW) | Enables output drivers only during read cycles; tDOE = 7 ns defines minimum OE-to-data-valid delay |
| BHE / BLE | Byte High/Low Enable (active LOW) | Independent 8-bit write masking; allows partial-word writes without read-modify-write overhead |
| VCC (Pins 11, 33) | Power Supply | 2.5–2.7 V only; dual VCC pins reduce IR drop and improve noise immunity on high-current transitions |
| VSS (Pins 12, 34) | Ground | Dual ground pins provide low-inductance return path for switching currents; mandatory for stable 15 ns timing |
Key Features
| Feature | Design Value |
|---|---|
| Automated CE Power-Down | Reduces standby current to ≤10 mA without external control logic-critical for battery-backed automotive modules |
| Dual Independent Byte Write | Enables 8-bit sub-word writes to upper or lower byte without disturbing adjacent data-eliminates software read-modify-write cycles |
| Automotive Temperature Range | Guaranteed operation from –40 °C to +125 °C with full timing compliance-meets AEC-Q100 Grade 1 requirements |
| Low-Voltage Optimized Design | 2.5–2.7 V operation minimizes dynamic power (220 mW max active) while maintaining 15 ns speed-ideal for energy-constrained ECUs |
| High Noise Immunity | VIH = 2.0 V min and VIL = 0.8 V max at VCC = 2.5 V ensure robust TTL/CMOS interfacing in electrically noisy vehicle environments |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance System (ADAS) Camera Module |
|---|---|
|
Use Scenario: Real-time storage of sensor fusion data and actuator command history in closed-loop combustion control. IC Role / Device Role / Timing Role: High-speed scratchpad RAM interfaced directly to 16-bit MCU; provides deterministic 15 ns read/write latency for PID loop execution. Use Value: Dual-byte write capability reduces CPU overhead by 40% vs. full-word writes when updating individual sensor calibration registers. |
Use Scenario: Frame buffering for 1280×720@30 fps image preprocessing pipeline in surround-view camera ECU. IC Role / Device Role / Timing Role: Low-latency data buffer between image sensor interface and DSP core; operates at 66 MHz bus clock with zero wait states. Use Value: 2.5–2.7 V supply range matches ADAS SoC I/O voltage, eliminating level shifters and reducing BOM count by one component. |
| Infotainment Head Unit | Transmission Control Module (TCM) |
|
Use Scenario: Storing GUI widget state and audio codec metadata during multi-tasking UI rendering. IC Role / Device Role / Timing Role: Non-volatile SRAM replacement for fast-access configuration storage; retains data across soft resets. Use Value: Automotive temperature rating eliminates need for thermal derating margins-reduces heatsink size by 35% in compact head unit chassis. |
Use Scenario: Logging gear-shift event timestamps and torque map interpolation coefficients during adaptive learning cycles. IC Role / Device Role / Timing Role: Deterministic-access memory for safety-critical firmware routines; guaranteed timing at –40 °C ensures cold-start reliability. Use Value: tPD = 15 ns power-down exit time enables immediate memory access after wake-from-sleep-reducing TCM response latency by 12 μs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV102416AL-15TQLI | Same 64 K × 16 organization, 15 ns speed, but rated –40 °C to +85 °C only; no AEC-Q100 qualification | Acceptable for cabin electronics (e.g., HVAC controller), not for under-hood or safety-critical use | Select only if automotive qualification is unnecessary and cost is primary driver |
| ON Semiconductor MC93C86V-15Z | 1-Mbit serial EEPROM (SPI interface), not parallel SRAM; 5 ms write cycle vs. nanosecond SRAM access | Suitable for non-volatile parameter storage-not for runtime data buffering or high-speed computation | Choose only when non-volatility outweighs speed; incompatible pinout and protocol require PCB redesign |
Compared with IS61LV102416AL-15TQLI and MC93C86V-15Z, the CY7C1021CV26-15ZSXET uniquely delivers AEC-Q100-compliant 15 ns parallel access with dual-byte control-enabling deterministic real-time performance unattainable with serial or commercial-grade alternatives.
Availability
CY7C1021CV26-15ZSXET is available at Aetrix Electronics and suitable for engine control units, ADAS camera modules, and transmission control modules requiring stable component supply across extended automotive lifecycles.
Supply support for CY7C1021CV26-15ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and consumer systems, with global manufacturing and quality certification to ISO/TS 16949.
The CY7C1021CV26 belongs to Cypress's automotive-qualified parallel SRAM product line, engineered specifically for deterministic, low-latency data storage in safety-critical electronic control units operating under extreme thermal and electrical conditions.
FAQ
Is CY7C1021CV26-15ZSXET compatible with 3.3 V systems?
No. This device is strictly specified for 2.5 V to 2.7 V operation per its Electrical Characteristics table. Applying 3.3 V exceeds absolute maximum ratings and risks permanent damage. Systems requiring 3.3 V interfaces must use level translators or select alternate SRAMs rated for that voltage range.
What is the function of NC pins 22, 23, and 28?
These pins are No Connects-physically unconnected to the silicon die. They must remain unconnected on the PCB; routing traces or applying voltage to them violates the device's mechanical and electrical design and may cause latch-up or timing failure.
How does automatic power-down behave during CE HIGH transitions?
When CE transitions HIGH, the device enters automatic power-down within tPD = 15 ns, reducing ICC to ≤10 mA (ISB2). I/O pins enter high-impedance state simultaneously. Power-down is fully automatic-no additional control signals or sequencing required.
Can BHE and BLE be asserted simultaneously for full 16-bit writes?
Yes. Asserting both BHE and BLE LOW enables simultaneous write to I/O8–I/O15 and I/O0–I/O7, performing a full 16-bit write. The truth table confirms this mode is explicitly supported and maintains tWC = 15 ns timing compliance.
CY7C1021CV26-15ZSXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 15 ns
- Voltage - Supply:
- 2.5V ~ 2.7V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1021CV26-15ZSXET FAQ
1.How can I place an order for CY7C1021CV26-15ZSXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV26-15ZSXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV26-15ZSXET reliable?
The price and inventory of CY7C1021CV26-15ZSXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV26-15ZSXET is usually 5 days.
3.What payment methods are accepted for CY7C1021CV26-15ZSXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV26-15ZSXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV26-15ZSXET?
CY7C1021CV26-15ZSXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV26-15ZSXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV26-15ZSXET?
For technical support, including CY7C1021CV26-15ZSXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV26-15ZSXET requirements.
6.How does Aetrix verify that CY7C1021CV26-15ZSXET is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV26-15ZSXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV26-15ZSXET meets industry standards.
7.What is the process for return or replacement of CY7C1021CV26-15ZSXET?
All CY7C1021CV26-15ZSXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV26-15ZSXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV26-15ZSXET part is unused and in its original packaging.
Return procedure for CY7C1021CV26-15ZSXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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