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Infineon Technologies CY7C1021CV33-10BAXIT
- Part No.:
- CY7C1021CV33-10BAXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY7C1021CV33-10BAXIT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,364
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Product details
Overview
CY7C1021CV33-10BAXIT from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 10 ns access time (Industrial grade), 3.3 V supply, automatic CE-controlled power-down, and independent byte write enable (BHE/BLE) for 16-bit data bus segmentation. It operates from –40°C to +85°C and is used in industrial control modules requiring deterministic low-latency memory access.
For engineers reviewing the CY7C1021CV33-10BAXIT datasheet, CY7C1021CV33-10BAXIT pinout, CY7C1021CV33-10BAXIT application, or CY7C1021CV33-10BAXIT equivalent, key selection criteria include tAA = 10 ns timing, dual-byte write control, CMOS-compatible 3.3 V I/O, industrial temperature support, and SOJ/TSOP II package compatibility.
Technical Context
This SRAM implements a synchronous, non-volatile-independent read/write architecture with fully decoded 16-bit bidirectional I/O (IO1–IO16), address range A0–A15, and three active-low control signals: CE (chip select), OE (output enable), and WE (write enable). Byte-level granularity is enforced via separate BHE (high-byte IO9–IO16) and BLE (low-byte IO1–IO8) inputs.
Power management relies on automatic CE-driven transition into standby mode, reducing ICC from 85 mA (active) to 5 mA (ISB2, CMOS input condition) or 15 mA (ISB1, TTL input condition). All outputs enter high-impedance state during deselection (CE HIGH), write cycles (WE LOW), or when OE/BHE/BLE are deasserted.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16 bits - provides 128 KB of fast, random-access storage without refresh circuitry. |
| Access Time (tAA) | 10 ns (Industrial) - guarantees deterministic read latency for real-time control loops. |
| Supply Voltage | 3.3 V ±10% - compatible with standard LVCMOS logic families and low-power system rails. |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including factory automation and motor drives. |
| Standby Current (ISB2) | 5 mA max - enables energy-efficient idle states in battery-backed or always-on embedded systems. |
| Byte Write Control | BHE and BLE pins - allow independent 8-bit writes to upper/lower data bytes without masking logic. |
| Output Drive | VOH ≥ 2.4 V @ –4 mA, VOL ≤ 0.4 V @ 8 mA - ensures robust noise margin and bus drive capability. |
Pinout & Package
Package: 44-pin 400-mil SOJ (Small Outline J-Lead) - surface-mount, leaded package with gull-wing leads, suitable for automated assembly and thermal cycling reliability in industrial PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Input | 16-bit address bus selects one of 65,536 memory locations; no internal latching. |
| IO1–IO8 | Bidirectional Data (Low Byte) | Driven by memory during reads when BLE = LOW; accepts data during writes under same condition. |
| IO9–IO16 | Bidirectional Data (High Byte) | Driven or loaded independently of low byte using BHE control signal. |
| CE | Chip Enable (Active LOW) | Primary chip-select; forces full device into high-Z or standby when HIGH. |
| OE | Output Enable (Active LOW) | Enables output drivers only when CE is also LOW; tri-states IOs if OE HIGH during read. |
| WE | Write Enable (Active LOW) | Initiates write cycle when CE and WE both LOW; disables outputs during write regardless of OE. |
| BLE / BHE | Byte Low/High Enable (Active LOW) | Selects 8-bit sub-bus for write/read; allows partial-word updates without external byte masking. |
| VCC | Power Supply | Two dedicated 3.3 V pins (pins 11, 33) reduce IR drop and improve noise immunity. |
| VSS | Ground | Two dedicated ground pins (pins 12, 34) provide low-inductance return path for switching currents. |
Key Features
| Feature | Design Value |
|---|---|
| Independent byte write control | Separate BHE/BLE inputs enable concurrent or selective 8-bit writes to upper/lower data lanes without external logic. |
| Automatic CE power-down | Reduces ICC to 5 mA (ISB2) when CE is deasserted, eliminating need for external power-gating circuitry. |
| High-speed 10 ns access (Industrial) | Meets timing requirements for microcontroller-based motion control where memory latency directly impacts loop jitter. |
| CMOS-compatible 3.3 V interface | Supports direct connection to ARM Cortex-M, Renesas RX, and TI C2000 MCU buses without level-shifting. |
| SOJ package with gull-wing leads | Provides mechanical robustness and thermal performance (ΘJA = 65.06°C/W) for reflow-soldered industrial PCBs. |
Applications
| Industrial PLC I/O Modules | Motor Drive Control Memory |
|---|---|
|
Use Scenario: Storing real-time encoder position buffers and PWM duty-cycle lookup tables in programmable logic controllers. IC Role / Device Role / Timing Role: Fast-access scratchpad memory interfaced directly to FPGA or dual-core MCU for deterministic data exchange. Use Value: 10 ns tAA ensures sub-microsecond read latency for closed-loop servo updates, minimizing position error accumulation. |
Use Scenario: Holding configuration registers and fault-history logs in field-oriented control (FOC) inverters. IC Role / Device Role / Timing Role: Non-refreshing volatile memory mapped into processor's peripheral address space for rapid parameter access. Use Value: Independent BHE/BLE enables atomic 16-bit register writes while preserving adjacent status bits during runtime updates. |
| Medical Imaging Signal Buffers | Ruggedized HMI Display Controllers |
|
Use Scenario: Temporary storage of digitized ultrasound scan-line data before DMA transfer to host processor. IC Role / Device Role / Timing Role: High-bandwidth parallel memory buffer synchronized to ADC sampling clock and DMA controller. Use Value: Dual VCC/VSS pins and low output capacitance (8 pF) maintain signal integrity at 100 MHz effective bus rates. |
Use Scenario: Frame buffer memory for monochrome LCD displays in outdoor kiosks and vehicle dashboards. IC Role / Device Role / Timing Role: Static RAM providing stable pixel data storage across wide temperature swings (–40°C to +85°C). Use Value: Automatic CE power-down cuts standby current to 5 mA, extending battery life in always-on display subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-10TIN | 1-Mbit (128K × 8), 10 ns, single-byte interface, no BHE/BLE, 2.7–3.6 V supply | Lacks byte-select capability; requires external logic for 16-bit bus alignment | Choose when cost sensitivity outweighs need for independent byte writes and board space permits glue logic. |
| ISSI IS61LV1024-10TL | 1-Mbit (64K × 16), 10 ns, identical pinout and BHE/BLE functionality, but rated only to +70°C (Commercial) | Not qualified for industrial temperature range; unsuitable for uncooled enclosures | Acceptable only in thermally managed commercial equipment where ambient stays below 70°C. |
Compared with AS6C1008-10TIN and IS61LV1024-10TL, CY7C1021CV33-10BAXIT uniquely delivers industrial-grade temperature operation *with* native 16-bit byte-write control in a pin-compatible SOJ package-eliminating redesign risk in legacy systems upgrading from CY7C1021BV33.
Availability
CY7C1021CV33-10BAXIT is available at Aetrix Electronics and suitable for industrial PLC I/O modules, motor drive control units, and ruggedized HMI display controllers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1021CV33-10BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
The CY7C1021CV33 belongs to Cypress's high-speed parallel SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time embedded systems where refresh-free operation and precise timing control are critical.
FAQ
Is CY7C1021CV33-10BAXIT pin-compatible with CY7C1021BV33?
Yes. The CY7C1021CV33-10BAXIT is functionally and pin-compatible with CY7C1021BV33, sharing identical 44-pin SOJ pinout, address/data/control signal mapping, and byte-enable architecture. Migration requires no PCB changes, though voltage tolerance and timing parameters differ slightly due to process improvements.
What is the maximum operating current during active read cycles?
The maximum active supply current (ICC) is 85 mA at VCC = 3.63 V, f = 1/tRC, and TA = –40°C to +85°C (Industrial grade). This value is measured under worst-case AC loading conditions and includes dynamic switching current for all address and data lines.
Does this SRAM require an external clock or refresh signal?
No. The CY7C1021CV33-10BAXIT is a static RAM and operates asynchronously-no clock input is required. It retains data indefinitely as long as VCC is applied and does not need periodic refresh cycles like DRAM devices.
Can BHE and BLE be asserted simultaneously for full 16-bit access?
Yes. Asserting both BHE and BLE LOW enables simultaneous read or write of all 16 data bits (IO1–IO16). The device treats this as a full-word operation, and timing parameters (e.g., tAA, tWC) apply to the complete 16-bit transfer without penalty.
CY7C1021CV33-10BAXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (7x7)
CY7C1021CV33-10BAXIT FAQ
1.How can I place an order for CY7C1021CV33-10BAXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV33-10BAXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV33-10BAXIT reliable?
The price and inventory of CY7C1021CV33-10BAXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-10BAXIT is usually 5 days.
3.What payment methods are accepted for CY7C1021CV33-10BAXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-10BAXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV33-10BAXIT?
CY7C1021CV33-10BAXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV33-10BAXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV33-10BAXIT?
For technical support, including CY7C1021CV33-10BAXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-10BAXIT requirements.
6.How does Aetrix verify that CY7C1021CV33-10BAXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV33-10BAXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-10BAXIT meets industry standards.
7.What is the process for return or replacement of CY7C1021CV33-10BAXIT?
All CY7C1021CV33-10BAXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-10BAXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV33-10BAXIT part is unused and in its original packaging.
Return procedure for CY7C1021CV33-10BAXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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