Infineon Technologies CY7C1021CV33-10VC

Overview

CY7C1021CV33-10VC from Cypress Semiconductor is a 64K × 16-bit (1,048,576-bit) asynchronous CMOS static RAM with 10 ns maximum access time, 3.3 V supply, and independent byte-wide write control via BHE/BLE. It features automatic CE-controlled power-down (ISB2 = 5 mA), TTL/CMOS-compatible inputs, and operates across commercial temperature range (0°C to +70°C). Used in legacy embedded controllers, FPGA configuration buffers, and industrial data acquisition systems requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1021CV33-10VC datasheet, CY7C1021CV33-10VC pinout, CY7C1021CV33-10VC application, or CY7C1021CV33-10VC equivalent, key selection criteria include tAA = 10 ns read timing, dual-byte enable architecture, SOJ/TSOP II package compatibility, and 3.3 V-only operation without 5 V tolerance.

Technical Context

The device implements a fully asynchronous SRAM core with separate address decoding for 16-bit words across 65,536 locations. Read and write operations are controlled by three independent enables: CE (chip select), OE (output enable), and WE (write enable), with byte-level granularity provided by BLE (I/O1–I/O8) and BHE (I/O9–I/O16).

Power management is hardware-automated: when CE is HIGH, the device enters ISB2 standby mode drawing only 5 mA at VCC max, regardless of OE/WE state. Input thresholds meet 3.3 V CMOS levels (VIH ≥ 2.0 V, VIL ≤ 0.8 V), and output drive complies with –4 mA VOH and 8 mA VOL specifications under load.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (400-mil wide), RoHS-compliant, surface-mount. Pin pitch: 0.8 mm. Body dimensions: 12.0 mm × 20.0 mm × 1.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 3.3 V SRAM applications.

Compared with IS61LV102416-10ML and MC1021C-10L, the CY7C1021CV33-10VC uniquely delivers dual-byte enable control in a commercial-grade TSOP II package while matching 10 ns timing and 5 mA standby - making it optimal for cost-sensitive, space-constrained embedded systems requiring precise memory access granularity.

Availability

CY7C1021CV33-10VC is available at Aetrix Electronics and suitable for industrial PLC data buffers, FPGA configuration storage, and legacy embedded controller memory requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1021CV33-10VC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable systems-on-chip for industrial, automotive, and consumer applications.

The CY7C1021CV33 belongs to Cypress's legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory expansion in resource-constrained embedded systems with strict timing budgets.

FAQ

Is CY7C1021CV33-10VC compatible with 5 V logic interfaces?

No. The device operates exclusively at 3.3 V (3.0–3.6 V) and has no 5 V tolerance on inputs or outputs. Connecting to 5 V logic without level translation will exceed absolute maximum ratings and risk permanent damage. Interface requires dedicated 3.3 V logic families or bidirectional voltage translators such as TXB0104.

What happens to data during power-down mode?

Data is retained as long as VCC remains ≥ 2.0 V, per the datasheet's "Data retention at 2.0V" specification. In automatic CE power-down (ISB2 mode), the internal memory array remains powered and functional - only peripheral circuitry is gated. No external backup battery is needed for short-term retention.

Can BLE and BHE be asserted simultaneously for full 16-bit operation?

Yes. When both BLE and BHE are LOW with CE LOW and WE LOW, all 16 I/O pins (I/O1–I/O16) participate in the same write cycle. Similarly, during read, asserting both enables full-word output. This behavior is explicitly defined in the Truth Table on page 12 of the datasheet.

Does CY7C1021CV33-10VC support asynchronous burst reads?

No. It is a strictly asynchronous SRAM with no internal address counter or burst logic. Each read requires a new address assertion on A0–A15. Burst transfers must be implemented externally via controller logic or DMA with sequential address generation - the device itself performs only single-location access per CE/OE cycle.