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Infineon Technologies CY7C1021CV33-10VXC
- Part No.:
- CY7C1021CV33-10VXC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021CV33-10VXC.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:3,219
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Product details
Overview
CY7C1021CV33-10VXC from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and automatic CE-controlled power-down. It supports independent byte write via BHE/BLE pins, operates across industrial temperature range (–40°C to +85°C), and is packaged in 44-pin TSOP II for embedded memory buffering in real-time control systems.
For engineers reviewing the CY7C1021CV33-10VXC datasheet, CY7C1021CV33-10VXC pinout, CY7C1021CV33-10VXC application, or CY7C1021CV33-10VXC equivalent, key selection criteria include tAA ≤ 10 ns, IO1–IO16 bidirectional data bus, dual-byte enable architecture, and CMOS-compatible 3.3 V interface timing compliance.
Technical Context
The CY7C1021CV33-10VXC implements a synchronous, address-decoded 64K × 16 SRAM array with separate row/column decoders and sense amplifiers. Its read path uses OE/CE-controlled output enable with tDOE = 5 ns and tHZOE = 5 ns, while write operations require simultaneous CE LOW, WE LOW, and active BHE or BLE to latch data on IO9–IO16 or IO1–IO8 respectively.
Power management relies on automatic CE-driven transition into low-power standby (ISB2 = 5 mA max at VCC = 3.63 V), with fast wake-up (tPU = 0 ns) and controlled power-down delay (tPD = 10 ns). Input/output pins exhibit 8 pF capacitance and TTL/CMOS-compatible voltage thresholds (VIH = 2.0 V min, VIL = 0.8 V max).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16 bits - provides 128 KB of fast, non-volatile-accessible storage for firmware buffers or real-time data tables. |
| Access Time (tAA) | 10 ns - enables direct interfacing with 100 MHz microcontrollers without wait states. |
| Supply Voltage | 3.3 V ±10% - matches standard low-voltage logic domains and eliminates level-shifting in 3.3 V systems. |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade operation in motor drives, PLCs, and telecom line cards. |
| Standby Current (ISB2) | 5 mA max - reduces system idle power by >95% versus active mode (ICC = 90 mA max). |
| Byte Write Control | BHE/BLE active-low inputs - allow selective 8-bit writes without read-modify-write cycles, preserving data integrity in multi-master buses. |
| Output Drive Strength | VOH ≥ 2.4 V @ –4 mA, VOL ≤ 0.4 V @ 8 mA - ensures robust noise margin and fanout of ≥10 LVTTL loads. |
Pinout & Package
Package: 44-pin TSOP II (0.400" wide), RoHS-compliant, surface-mountable with 1.27 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus selects one of 65,536 memory locations; compatible with standard microprocessor address lines. |
| IO1–IO8 / IO9–IO16 | Bidirectional Data I/O | Two independent 8-bit data ports support concurrent low/high byte access; tri-stated when CE/OE/BHE/BLE inactive. |
| CE | Chip Enable (Active LOW) | Primary chip select; asserts internal logic and enables power-up; triggers automatic ISB2 standby when HIGH. |
| WE | Write Enable (Active LOW) | Controls write initiation; must be LOW with CE LOW and BHE/BLE LOW to store data; disables outputs during write. |
| OE | Output Enable (Active LOW) | Enables output drivers only during reads; forces IO pins to high-Z when HIGH, preventing bus contention. |
| BHE / BLE | Byte High/Low Enable (Active LOW) | Selects upper (IO9–IO16) or lower (IO1–IO8) byte for write/read; enables true 8-bit granularity without masking logic. |
| VCC | Power Supply | 3.3 V core supply; two dedicated pins reduce IR drop and improve noise immunity in high-speed operation. |
| VSS | Ground | Two ground pins provide low-inductance return path; essential for stable 10 ns timing and EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE Power-Down | Reduces ICC from 90 mA to 5 mA instantly upon CE deassertion-no external control logic required. |
| Dual-Byte Write Architecture | Eliminates need for external byte multiplexers or glue logic when interfacing with 8-bit peripherals or legacy controllers. |
| 10 ns Read Access (tAA) | Supports zero-wait-state operation with ARM Cortex-M4/M7 or RISC-V cores running at ≤100 MHz. |
| High Noise Immunity | Input thresholds (VIH = 2.0 V, VIL = 0.8 V) and 8 pF pin capacitance ensure reliable operation in electrically noisy industrial environments. |
| Pb-Free TSOP II Packaging | Meets RoHS Directive 2011/65/EU; compatible with standard reflow profiles (peak 260°C) and automated SMT assembly. |
Applications
| Industrial PLC Data Buffering | Automotive Engine Control Unit (ECU) Parameter Storage |
|---|---|
|
Use Scenario: Storing real-time sensor calibration tables and actuator command history in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Fast-access scratchpad memory holding volatile runtime parameters between controller task cycles. Use Value: 10 ns tAA ensures parameter fetch completes within single CPU instruction cycle, eliminating pipeline stalls in 100 MHz ARM-based PLC CPUs. |
Use Scenario: Holding transient engine knock correction maps and fuel trim adjustments during closed-loop combustion control. IC Role / Device Role / Timing Role: Low-latency, byte-selectable RAM for rapid updates to adaptive control coefficients under dynamic load conditions. Use Value: Independent BHE/BLE enables atomic 8-bit writes to correction values without disturbing adjacent calibration bytes, preventing transient control errors. |
| Telecom Line Card Packet Buffers | Medical Imaging System Frame FIFO |
|
Use Scenario: Temporary storage of Ethernet frame payloads in carrier-grade access switches requiring sub-microsecond latency. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as first-in-first-out buffer between MAC and PHY layers. Use Value: Tri-state IO control (via OE/CE/BHE/BLE) allows seamless sharing of data bus with multiple DMA channels without arbitration logic. |
Use Scenario: Capturing raw pixel data from high-speed CCD sensors in portable ultrasound devices before DSP processing. IC Role / Device Role / Timing Role: Burst-mode write memory accepting parallel 16-bit pixel streams at up to 100 MB/s. Use Value: 325 mW max active power enables thermal design within compact handheld enclosures without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-10TIN | 1-Mbit (128K × 8), 10 ns, 3.3 V, 48-pin TSOP I - lacks byte write enable; single 8-bit data bus. | Requires external logic for 16-bit interface; unsuitable where BHE/BLE-controlled partial writes are needed. | Select only if system uses 8-bit data path and does not require independent byte write capability. |
| IS61LV102416-10TL | 1-Mbit (64K × 16), 10 ns, 3.3 V, 44-pin TSOP II - identical organization and timing but no automotive qualification. | Not rated for –40°C to +85°C industrial operation; limited to commercial temp range unless derated. | Acceptable for cost-sensitive commercial designs where extended temperature validation is unnecessary. |
Compared with AS6C1008-10TIN and IS61LV102416-10TL, the CY7C1021CV33-10VXC uniquely delivers industrial-qualified dual-byte write control in a pin-compatible 44-pin TSOP II footprint-enabling deterministic partial writes and simplified PCB layout in real-time embedded systems.
Availability
CY7C1021CV33-10VXC is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, and telecom line cards requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for CY7C1021CV33-10VXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
The CY7C1021CV33 series targets deterministic, low-power embedded memory applications demanding fast access, byte-granular control, and extended temperature operation-especially in real-time control and data acquisition systems.
FAQ
Is CY7C1021CV33-10VXC pin-compatible with CY7C1021BV33?
Yes, CY7C1021CV33-10VXC is pin- and function-compatible with CY7C1021BV33, including identical 44-pin TSOP II pinout, address/data mapping, and control signal definitions (CE, WE, OE, BHE, BLE). The 'V' suffix denotes enhanced voltage tolerance and improved AC characteristics over the 'B' version, but no PCB redesign is required for drop-in replacement.
What is the maximum clock frequency supported for burst reads?
The CY7C1021CV33-10VXC does not use a clock input; it is an asynchronous SRAM. Maximum effective throughput is determined by tRC = 10 ns, enabling up to 100 million random accesses per second. For sequential reads, back-to-back access is limited only by tOHA = 3 ns address hold time and bus turnaround delays.
Can BHE and BLE be asserted simultaneously for full 16-bit writes?
Yes, asserting both BHE and BLE LOW simultaneously enables full 16-bit write operations to IO1–IO16. This configuration is explicitly supported in the functional description and truth table, and results in concurrent latching of all 16 data bits without additional timing penalties or restrictions.
Does the device require external pull-up resistors on control lines?
No external pull-ups are required on CE, WE, OE, BHE, or BLE. All control inputs have TTL/CMOS-compatible thresholds and internal weak pull-downs specified in the datasheet; however, system-level noise immunity may benefit from 10 kΩ pull-downs on unused control lines in high-EMI environments.
CY7C1021CV33-10VXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1021CV33-10VXC FAQ
1.How can I place an order for CY7C1021CV33-10VXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV33-10VXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV33-10VXC reliable?
The price and inventory of CY7C1021CV33-10VXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-10VXC is usually 5 days.
3.What payment methods are accepted for CY7C1021CV33-10VXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-10VXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV33-10VXC?
CY7C1021CV33-10VXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV33-10VXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV33-10VXC?
For technical support, including CY7C1021CV33-10VXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-10VXC requirements.
6.How does Aetrix verify that CY7C1021CV33-10VXC is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV33-10VXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-10VXC meets industry standards.
7.What is the process for return or replacement of CY7C1021CV33-10VXC?
All CY7C1021CV33-10VXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-10VXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV33-10VXC part is unused and in its original packaging.
Return procedure for CY7C1021CV33-10VXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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