My Inquiry
My Account
Infineon Technologies CY7C1021CV33-10VXCT
- Part No.:
- CY7C1021CV33-10VXCT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021CV33-10VXCT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,522
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1021CV33-10VXCT from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and automatic CE-controlled power-down mode. It supports independent byte write via BHE/BLE controls, operates across industrial temperature range (–40°C to +85°C), and is packaged in a 44-pin TSOP II. It serves as main data buffer in real-time industrial controllers requiring deterministic low-latency memory access.
For engineers reviewing the CY7C1021CV33-10VXCT datasheet, CY7C1021CV33-10VXCT pinout, CY7C1021CV33-10VXCT application, or CY7C1021CV33-10VXCT equivalent, key selection considerations include tAA = 10 ns timing compliance, dual-byte enable architecture, CE/OE/WE control logic compatibility, and industrial-grade thermal performance in TSOP II packaging.
Technical Context
This SRAM implements a synchronous, non-volatile-accessible 64K × 16-bit array with fully decoded address inputs (A0–A15), bidirectional I/O lines (IO1–IO16), and TTL/CMOS-compatible control signals. Its read/write cycle timing is governed by overlapping CE, WE, OE, BHE, and BLE transitions - not clocked operation - enabling direct integration into microcontroller bus interfaces without additional glue logic.
The device features two independent byte-write enables (BHE for IO9–IO16, BLE for IO1–IO8), allowing partial-word writes without masking circuitry. Power management relies on automatic CE-driven transition to standby mode (ISB2 = 5 mA max), eliminating need for external sleep control in battery-sensitive applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits); supports full-word or half-word data transfers without alignment overhead |
| Access Time (tAA) | 10 ns (industrial grade); guarantees deterministic read latency for 100 MHz bus timing budgets |
| Supply Voltage | 3.3 V ±10%; compatible with standard LVCMOS I/O domains and eliminates level-shifting in 3.3 V systems |
| Operating Temperature | –40°C to +85°C; validated for continuous operation in industrial control cabinets and motor drive enclosures |
| Standby Current (ISB2) | 5 mA max (CMOS input condition); enables <10 µW standby power per bit in always-on monitoring nodes |
| Output Drive | IOH = –4 mA / IOL = 8 mA; sufficient to drive 10 cm PCB traces or fan-out to 2–3 FPGA inputs without buffering |
| Input Leakage | ±1 µA max (industrial temp); ensures reliable address decoding under ESD-prone factory environments |
Pinout & Package
Package: 44-pin TSOP II (0.400″ wide), JEDEC MO-141AC compliant, lead-free (Pb-free) variant. Pin pitch: 0.8 mm; body dimensions: 18.4 mm × 10.16 mm × 1.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Input | 16-bit unidirectional address bus; selects one of 65,536 memory locations; no internal latching |
| IO1–IO8 | Bidirectional Data (Lower Byte) | Driven during read when BLE = LOW; latched during write when BLE = LOW and WE = CE = LOW |
| IO9–IO16 | Bidirectional Data (Upper Byte) | Driven during read when BHE = LOW; latched during write when BHE = LOW and WE = CE = LOW |
| CE | Chip Enable (Active LOW) | Primary chip select; forces all outputs to high-Z and activates automatic power-down when HIGH |
| WE | Write Enable (Active LOW) | Controls direction of IO pins: LOW enables write, HIGH enables read (with OE = LOW) |
| OE | Output Enable (Active LOW) | Enables output drivers only when CE = LOW; tri-states IOs if OE = HIGH even during read mode |
| BLE / BHE | Byte Write Enable (Active LOW) | Independent gating of lower/upper byte paths; allows 8-bit partial writes without data corruption |
| VCC | Power Supply | 3.3 V core and I/O supply; requires local 100 nF + 4.7 µF decoupling per VCC pin pair |
| VSS | Ground | Dual ground pins (pins 12 & 34) reduce ground bounce in burst-access scenarios |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE Power-Down | Reduces ICC to 5 mA max without external control logic - critical for energy-constrained edge nodes |
| Independent Byte Write Control | Eliminates need for external byte-mask logic or software byte-swapping in mixed-data-width peripherals |
| High-Speed 10 ns Access | Meets timing closure for 80–100 MHz microcontroller buses without wait states in burst-mode transfers |
| Industrial Temperature Support | Validated operation from –40°C to +85°C ensures reliability in uncontrolled ambient industrial deployments |
| TSOP II Pb-Free Packaging | RoHS-compliant, reflow-solderable package with proven thermal resistance (ΘJA = 76.92°C/W) |
Applications
| Industrial PLC Data Buffer | Automotive Body Control Module |
|---|---|
|
Use Scenario: Stores real-time I/O scan data and ladder logic intermediate variables in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile-accessible scratchpad memory interfaced directly to ARM Cortex-M7 bus with no wait states. Use Value: 10 ns tAA enables full 64K word read/write within single 100 MHz bus cycle; dual-byte write avoids 16-bit register split overhead. |
Use Scenario: Holds configuration tables and sensor fusion buffers in automotive body domain controllers (e.g., door module ECUs). IC Role / Device Role / Timing Role: Low-power data store retaining volatile state during ignition cycling; powered from always-on 3.3 V rail. Use Value: ISB2 = 5 mA max at 85°C extends battery drain interval beyond 30 days in sleep mode; AEC-Q100 stress compliance confirmed. |
| Medical Imaging Front-End FIFO | Test Equipment Pattern Memory |
|
Use Scenario: Acts as line-buffer FIFO between ADC interface and FPGA-based image preprocessor in portable ultrasound units. IC Role / Device Role / Timing Role: Synchronous burst-access memory supporting 20 MSPS pixel streams with deterministic latency. Use Value: tHZOE = 5 ns and tLZOE = 0 ns ensure clean output enable edges for jitter-sensitive sampling clocks; IO drive strength matches FPGA input thresholds. |
Use Scenario: Stores digital stimulus/response patterns in automated test equipment (ATE) channel cards. IC Role / Device Role / Timing Role: High-reliability pattern store accessed via parallel bus from pattern generator ASIC. Use Value: 44-pin TSOP II provides mechanical stability under repeated thermal cycling; tPD = 10 ns enables precise pattern timing alignment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-10TIN | 1-Mbit (128K × 8), 10 ns, 3.3 V; single-byte organization; no BHE/BLE; higher standby current (15 µA vs 5 mA) | Limited to 8-bit bus systems; lacks byte-select flexibility for mixed-width peripherals | Select only when system uses 8-bit data path and requires lower leakage (not lower power at scale) |
| IS61LV102416-10TL | 1-Mbit (64K × 16), 10 ns, 3.3 V; identical pinout and timing; higher ICC active (110 mA vs 90 mA); no automotive qualification | Drop-in replacement for commercial-only designs; unsuitable for extended temperature deployment | Prefer for cost-sensitive commercial gear where industrial temp rating is unnecessary |
Compared with AS6C1008-10TIN and IS61LV102416-10TL, CY7C1021CV33-10VXCT uniquely delivers industrial temperature support, dual-byte write capability, and optimized standby power - making it the only choice for thermally demanding, mixed-data-width embedded systems requiring long-term supply continuity.
Availability
CY7C1021CV33-10VXCT is available at Aetrix Electronics and suitable for industrial PLCs, automotive body control modules, medical imaging front-ends, and automated test equipment requiring stable component supply across extended product lifecycles.
Supply support for CY7C1021CV33-10VXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure markets.
The CY7C1021CV33 belongs to Cypress's legacy high-speed parallel SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time embedded systems with strict thermal and timing constraints.
FAQ
Is CY7C1021CV33-10VXCT pin-compatible with CY7C1021BV33?
Yes - CY7C1021CV33-10VXCT is functionally and pin-compatible with CY7C1021BV33, sharing identical pinout, control logic, and memory organization. Key improvements include tighter tAA tolerance (10 ns guaranteed vs typical), enhanced ISB2 stability over temperature, and updated Pb-free process compliance. No PCB redesign is required for migration.
What is the maximum capacitive load supported on IO pins?
The IO pins are characterized for 30 pF total load (including PCB trace and receiver input capacitance) in AC testing per Figure 3(a) of the datasheet. For reliable 10 ns operation, total load must remain ≤30 pF; exceeding this increases tDOE and tHZOE delays and may cause setup/hold violations in high-speed bus interfaces.
Does CY7C1021CV33-10VXCT support asynchronous burst reads?
No - CY7C1021CV33-10VXCT is a static RAM with no internal burst counter or sequential addressing logic. Each read requires valid address setup before CE/OE assertion. Burst transfers must be implemented externally via address incrementing logic or microcontroller DMA with manual address update.
Can BHE and BLE be asserted simultaneously for full 16-bit writes?
Yes - asserting both BHE and BLE LOW while CE and WE are LOW enables full 16-bit parallel write to the addressed location. The device internally gates IO1–IO8 and IO9–IO16 independently, so simultaneous activation produces atomic 16-bit storage without intermediate states or bus contention.
CY7C1021CV33-10VXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1021CV33-10VXCT FAQ
1.How can I place an order for CY7C1021CV33-10VXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV33-10VXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV33-10VXCT reliable?
The price and inventory of CY7C1021CV33-10VXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-10VXCT is usually 5 days.
3.What payment methods are accepted for CY7C1021CV33-10VXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-10VXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV33-10VXCT?
CY7C1021CV33-10VXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV33-10VXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV33-10VXCT?
For technical support, including CY7C1021CV33-10VXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-10VXCT requirements.
6.How does Aetrix verify that CY7C1021CV33-10VXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV33-10VXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-10VXCT meets industry standards.
7.What is the process for return or replacement of CY7C1021CV33-10VXCT?
All CY7C1021CV33-10VXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-10VXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV33-10VXCT part is unused and in its original packaging.
Return procedure for CY7C1021CV33-10VXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1021CV33-10VXCT Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
