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Infineon Technologies CY7C1021CV33-10ZC
- Part No.:
- CY7C1021CV33-10ZC
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021CV33-10ZC.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,332
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Product details
Overview
CY7C1021CV33-10ZC from Cypress Semiconductor is a 64K × 16-bit (1,048,576-bit) asynchronous CMOS static RAM with 10 ns maximum access time, 3.3 V supply, and independent byte-enable control (BHE/BLE) for high-speed memory interfacing in embedded controllers and data acquisition systems.
For engineers reviewing the CY7C1021CV33-10ZC datasheet, CY7C1021CV33-10ZC pinout, CY7C1021CV33-10ZC application, or CY7C1021CV33-10ZC equivalent, key selection factors include tAA = 10 ns access time, automatic CE-controlled power-down (ISB2 = 5 mA), dual 8-bit I/O bus segmentation, and TSOP II/48-ball FBGA package compatibility.
Technical Context
The CY7C1021CV33-10ZC implements a fully asynchronous SRAM architecture with separate address latching on A0–A15 and bidirectional data I/O1–I/O16. It supports three independent read/write enable paths: CE/OE/WE for full-word access, CE/OE/BLE for lower-byte reads, and CE/OE/BHE for upper-byte reads.
Its power management relies on TTL- and CMOS-compatible CE threshold detection to trigger automatic standby (ISB1 = 15 mA, ISB2 = 5 mA), while output impedance control is synchronized to OE, BHE, BLE, and CE transitions - enabling precise bus sharing in multi-peripheral systems without external bus transceivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1 Mbit); enables 16-bit data bus alignment without glue logic in microcontroller interfaces. |
| Access Time (tAA) | 10 ns max at VCC = 3.3 V ±10%; meets timing closure for 80 MHz CPU buses with zero wait states. |
| Supply Voltage | 3.3 V ±10% (2.97–3.63 V); compatible with modern low-voltage logic families and eliminates level-shifting needs. |
| Standby Current (ISB2) | 5 mA max at VCC = 3.63 V, CMOS inputs; supports battery-backed retention in portable instrumentation. |
| I/O Voltage Levels | VIH = 2.0 V min, VOL = 0.4 V max at IOL = 8 mA; ensures noise margin >0.4 V under full-load conditions. |
| Byte Enable Logic | BHE/BLE active-Low; allows independent 8-bit writes to upper/lower bytes without read-modify-write cycles. |
| Output High-Z Entry | tHZOE = 5 ns, tHZCE = 5 ns (5 pF load); guarantees clean bus release before next peripheral asserts control. |
Pinout & Package
Available in 44-pin TSOP II (400-mil width) and 48-ball FBGA packages. Pin functions are identical across both packages except for ball/pad mapping; all signals retain consistent electrical behavior and timing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; latched internally on CE transition, supporting multiplexed or non-multiplexed host interfaces. |
| I/O1–I/O8 | Lower-Byte Bidirectional Data | Driven during BLE = LOW reads/writes; tri-stated when BLE = HIGH or CE = HIGH. |
| I/O9–I/O16 | Upper-Byte Bidirectional Data | Driven during BHE = LOW reads/writes; isolated from lower byte for true 8-bit sub-word operations. |
| CE | Chip Enable | Primary device select; initiates automatic power-down when HIGH, reducing ICC to ISB2 (5 mA). |
| OE | Output Enable | Controls output drivers only; does not affect internal power state - enables output gating without deselecting chip. |
| WE | Write Enable | Active-Low write strobe; combined with CE and BHE/BLE to define write boundaries per byte lane. |
| BLE / BHE | Byte Low/High Enable | Independent 8-bit write masking; eliminates need for external byte-lane gating logic in 16-bit systems. |
| VCC / VSS | Power / Ground | Dual VCC pins (pins 12 & 37 in TSOP) and dual VSS (pins 11 & 36) reduce simultaneous switching noise. |
Key Features
| Feature | Design Value |
|---|---|
| Pin- and function-compatible with CY7C1021BV33 | Drop-in replacement for legacy 3.3 V SRAM designs without PCB or firmware changes. |
| Automatic CE power-down | Reduces standby current to 5 mA (ISB2) without requiring external sleep control logic. |
| Independent upper/lower byte control | Enables efficient 8-bit peripheral interfacing on 16-bit buses - e.g., LCD controllers or ADCs with byte-aligned registers. |
| High-speed 10 ns access | Supports direct connection to 8051, ARM7, and ColdFire microcontrollers running at ≤80 MHz without wait-state insertion. |
| Low active power (360 mW max) | Enables use in thermally constrained industrial modules where heat dissipation limits component density. |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Data FIFO |
|---|---|
|
Use Scenario: Storing real-time sensor fusion data between FPGA-accelerated preprocessing and ARM-based analysis in programmable logic controllers. IC Role / Device Role / Timing Role: Asynchronous buffer with byte-selectable writes to accommodate mixed 8-bit analog input registers and 16-bit timestamp counters. Use Value: 10 ns tAA and tHZCE = 5 ns allow deterministic 100 ns cycle time for burst transfers, minimizing jitter in closed-loop control cycles. |
Use Scenario: Temporary frame storage in portable ultrasound devices where raw echo data arrives at 20 MB/s from ADCs before compression. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as ping-pong buffer with independent BHE/BLE control for concurrent capture and readout. Use Value: Independent byte enables permit interleaved 8-bit pixel packing and 16-bit metadata tagging without bus contention or software overhead. |
| Avionics Display Controller Frame Buffer | Test Equipment Pattern Generator Memory |
|
Use Scenario: Holding rendered GUI layers in DO-254-compliant cockpit displays requiring radiation-tolerant, predictable timing. IC Role / Device Role / Timing Role: Non-volatile-retentive SRAM (data retention at 2.0 V) serving as primary frame buffer with deterministic tAA and tOHA ≤ 3 ns. Use Value: Guaranteed 10 ns access and 3 ns address hold time ensure pixel clock synchronization across multiple display outputs without FIFO buffering. |
Use Scenario: Storing stimulus patterns in automated test equipment where pattern depth exceeds on-chip memory of FPGA-based generators. IC Role / Device Role / Timing Role: External memory mapped into AXI-lite interface via bridge IC, accessed via burst reads with CE-gated power-down between test sequences. Use Value: ISB2 = 5 mA standby current extends calibration interval stability by limiting thermal drift during idle periods between test runs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV102416-10TL | Same 64K × 16 organization, 10 ns tAA, but uses single VCC pin and lacks BHE/BLE separation - requires external byte gating. | Acceptable for cost-sensitive consumer electronics where board space permits discrete gating logic. | Select when footprint compatibility is secondary to BOM simplification and long-term vendor availability. |
| ON Semiconductor MC1021V33-10L | Pin-compatible but rated only for commercial temperature range (0°C to +70°C); ISB2 = 8 mA (vs. 5 mA). | Suitable for non-industrial applications where ambient temperature stays below 70°C and standby power is less critical. | Choose only if operating environment remains within commercial spec and thermal design margin accommodates higher ISB. |
Compared with IS61LV102416-10TL and MC1021V33-10L, the CY7C1021CV33-10ZC uniquely delivers industrial-grade temperature support (–40°C to +85°C), dual VCC/VSS for noise immunity, and native byte-enable logic - eliminating external components and improving timing predictability in safety-critical systems.
Availability
CY7C1021CV33-10ZC is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging data FIFOs, and avionics display controller frame buffers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1021CV33-10ZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-reliability memory, PSoC programmable systems-on-chip, and USB/USB-C controllers for industrial and automotive markets.
The CY7C1021CV33 belongs to Cypress's legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where asynchronous operation and byte-level granularity are essential.
FAQ
What is the minimum VCC required to maintain data retention in CY7C1021CV33-10ZC?
Data retention is guaranteed down to 2.0 V at temperatures up to +85°C, per the Electrical Characteristics table on page 4 of Rev. *C datasheet. This enables use in brown-out scenarios where regulated 3.3 V drops temporarily but system backup capacitors sustain VCC above 2.0 V for ≥100 ms.
Can CY7C1021CV33-10ZC operate with mixed voltage signaling (e.g., 3.3 V VCC and 5 V address lines)?
No - absolute maximum input voltage is VCC + 0.5 V, so with VCC = 3.3 V, VIH must stay ≤ 3.8 V. Applying 5 V to any input (including A0–A15) violates Maximum Ratings and risks permanent damage. Level translation is mandatory for 5 V host interfaces.
Does the CY7C1021CV33-10ZC support concurrent upper- and lower-byte writes?
Yes - when both BHE and BLE are driven LOW simultaneously with CE and WE, the device performs a full 16-bit write. The truth table (page 12) explicitly lists "Write – All bits" mode with BHE = L and BLE = L, confirming atomic 16-bit operation.
How does automatic power-down behave when CE is held HIGH but OE and WE are toggled?
When CE = HIGH, the device enters ISB2 standby regardless of OE or WE state. Output drivers remain in high-impedance, and internal array biasing shuts down - resulting in 5 mA max current. Toggling OE or WE has no effect until CE returns LOW.
CY7C1021CV33-10ZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Bag
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1021CV33-10ZC FAQ
1.How can I place an order for CY7C1021CV33-10ZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV33-10ZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV33-10ZC reliable?
The price and inventory of CY7C1021CV33-10ZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-10ZC is usually 5 days.
3.What payment methods are accepted for CY7C1021CV33-10ZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-10ZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV33-10ZC?
CY7C1021CV33-10ZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV33-10ZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV33-10ZC?
For technical support, including CY7C1021CV33-10ZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-10ZC requirements.
6.How does Aetrix verify that CY7C1021CV33-10ZC is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV33-10ZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-10ZC meets industry standards.
7.What is the process for return or replacement of CY7C1021CV33-10ZC?
All CY7C1021CV33-10ZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-10ZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV33-10ZC part is unused and in its original packaging.
Return procedure for CY7C1021CV33-10ZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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