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Infineon Technologies CY7C1021CV33-10ZXI
- Part No.:
- CY7C1021CV33-10ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021CV33-10ZXI.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:4,125
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Product details
Overview
CY7C1021CV33-10ZXI from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, and industrial temperature range (–40°C to +85°C). It features independent byte enable (BHE/BLE), automatic CE-controlled power-down, and low active power (max 325 mW). Used in real-time embedded control buffers, FPGA configuration storage, and industrial PLC data logging.
For engineers reviewing the CY7C1021CV33-10ZXI datasheet, CY7C1021CV33-10ZXI pinout, CY7C1021CV33-10ZXI application, or CY7C1021CV33-10ZXI equivalent, key selection criteria include tAA = 10 ns read timing, dual-byte write capability, SOJ/TSOP II package compatibility, and industrial-grade thermal performance (ΘJA = 76.92°C/W).
Technical Context
The CY7C1021CV33-10ZXI implements a synchronous, non-volatile-independent SRAM core with full address decoding (A0–A15), bidirectional 16-bit I/O (IO1–IO16), and TTL/CMOS-compatible control logic. Its CE-driven automatic power-down reduces standby current to 5 mA (ISB2) when deselected.
Read and write operations are controlled by active-low CE, OE, WE, BHE, and BLE signals with defined setup/hold timing (e.g., tSD = 5 ns, tHA = 0 ns). Output impedance transitions (tHZOE = 5 ns, tLZCE = 3 ns) support fast bus turnaround in multiplexed memory systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits); supports 16-bit parallel data interface without external width expansion. |
| Access Time (tAA) | 10 ns max at VCC = 3.3 V ±10%, TA = –40°C to +85°C; enables ≤100 MHz bus operation in deterministic timing systems. |
| Supply Voltage | 3.3 V ±10% (2.97–3.63 V); compatible with standard LVCMOS-33 I/O domains and eliminates level-shifting in 3.3 V systems. |
| Active Current (ICC) | 90 mA max at fMAX = 100 MHz; corresponds to ~325 mW typical active power for thermal budgeting in enclosed industrial enclosures. |
| Standby Current (ISB2) | 5 mA max under CMOS input conditions (CE > VCC – 0.3 V); enables <17 mW standby power in battery-backed or energy-sensitive applications. |
| Input/Output Capacitance | CIN/COUT = 8 pF max; ensures signal integrity on PCB traces up to 10 cm length at 100 MHz with minimal termination. |
| Operating Temperature | –40°C to +85°C (Industrial grade); validated for continuous operation in motor drives, factory automation controllers, and outdoor telemetry units. |
Pinout & Package
Package: 44-pin 400-mil SOJ (Small Outline J-Lead) - RoHS-compliant, surface-mount, JEDEC MS-024AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Input | 16-bit unidirectional address bus; selects one of 65,536 memory locations; requires stable setup before CE/WE assertion. |
| IO1–IO16 | Bidirectional Data I/O | 16-bit parallel data path; tri-stated during CE HIGH, OE HIGH, or write cycles; supports byte-wide writes via BLE/BHE. |
| CE | Chip Enable (Active LOW) | Primary device select; initiates automatic power-down when HIGH; must be asserted before OE/WE for valid access. |
| OE | Output Enable (Active LOW) | Controls output driver enable; LOW enables data output; HIGH forces IO pins to high-impedance (not used during write). |
| WE | Write Enable (Active LOW) | Initiates write cycle when CE and WE both LOW; latches data on rising edge of WE or CE, per timing overlap rules. |
| BHE / BLE | Byte High/Low Enable (Active LOW) | Independent 8-bit write masking: BLE controls IO1–IO8, BHE controls IO9–IO16; enables partial-word updates without read-modify-write. |
| VCC | Power Supply | Two dedicated 3.3 V pins (pins 11 & 33); reduces IR drop and noise coupling across high-speed data transfers. |
| VSS | Ground | Two dedicated ground pins (pins 12 & 34); provides low-inductance return path for switching currents and improves EMI margin. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-byte write control | Independent BHE/BLE inputs allow simultaneous or selective 8-bit writes to upper/lower data bytes-eliminates software overhead in byte-aligned protocol stacks. |
| Automatic CE power-down | Reduces ICC to ISB2 = 5 mA when CE is deasserted; cuts active power by >94% during idle bus cycles in real-time OS task scheduling. |
| 10 ns access with 3.3 V supply | tAA = 10 ns at 3.3 V enables direct interfacing with FPGA I/O banks and microcontroller EBI without wait states at 80–100 MHz clock rates. |
| Industrial temperature rating | Validated operation from –40°C to +85°C ensures reliability in uncooled industrial cabinets, railway signaling modules, and HVAC control panels. |
| SOJ/TSOP II package compatibility | Pins match CY7C1021BV33 footprint; allows drop-in replacement in legacy designs without PCB rework or layout revision. |
Applications
| Industrial PLC Data Buffer | FPGA Configuration Storage |
|---|---|
|
Use Scenario: Storing real-time I/O scan data between CPU cycles in programmable logic controller backplanes. IC Role / Device Role / Timing Role: High-speed parallel SRAM acting as dual-port-accessible scratchpad memory for deterministic 10 µs I/O update intervals. Use Value: 10 ns tAA and tRC ensure zero-wait-state access for ARM Cortex-M7-based PLC CPUs running at 200 MHz with EBI peripherals. |
Use Scenario: Holding configuration bitstreams for Xilinx Spartan-7 FPGAs during cold-start initialization sequences. IC Role / Device Role / Timing Role: Nonvolatile-independent boot memory providing parallel 16-bit configuration words to FPGA's SelectMAP interface. Use Value: Dual-byte write capability enables efficient bitstream loading with 8-bit alignment, reducing configuration time by 32% vs. 8-bit-only SRAMs. |
| Motor Drive Control FIFO | Medical Imaging Frame Buffer |
|
Use Scenario: Buffering PWM duty-cycle updates and sensor feedback in servo drive digital signal processors. IC Role / Device Role / Timing Role: Low-latency write-through buffer synchronizing ADC sampling (1 MSPS) with PWM update rate (20 kHz). Use Value: Automatic CE power-down cuts standby power to 17 mW, meeting IEC 61800-3 Class A EMI and thermal limits in compact drive modules. |
Use Scenario: Temporary storage of 12-bit grayscale pixel rows during ultrasound image reconstruction pipelines. IC Role / Device Role / Timing Role: Burst-capable SRAM supporting 16-bit wide pixel streaming at 65 MHz pixel clock with no pipeline stalls. Use Value: 8 pF COUT and tight tHZOE = 5 ns enable clean 100 MHz bus transitions across 8-layer medical PCBs with strict signal integrity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV102416AL-10TLI | Same 64K × 16 organization, 10 ns tAA, but uses TSOP II only (no SOJ); ISB2 = 10 mA (vs. 5 mA). | Lacks SOJ package option; higher standby current limits use in ultra-low-power battery-buffered systems. | Select when TSOP II footprint is fixed and 5 mA standby is not required; verify thermal derating at 85°C. |
| Winbond W9812G2JH-10 | SDRAM (not SRAM); requires refresh, burst mode, and controller initialization; tAA not directly comparable. | Not functionally equivalent: unsuitable for simple parallel bus interfaces without SDRAM controller logic. | Avoid unless redesigning for DDR-like architecture; incompatible pinout, timing model, and power sequencing. |
Compared with IS61LV102416AL-10TLI, CY7C1021CV33-10ZXI offers lower standby current and SOJ package flexibility; versus W9812G2JH-10, it delivers true asynchronous SRAM behavior with zero refresh overhead and deterministic latency.
Availability
CY7C1021CV33-10ZXI is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration storage, and motor drive control FIFOs requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1021CV33-10ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable system-on-chip solutions for industrial and automotive markets.
The CY7C1021CV33 belongs to Cypress's high-speed parallel SRAM product line, designed specifically for deterministic, low-latency data buffering in real-time embedded systems where refresh-free operation and industrial temperature resilience are mandatory.
FAQ
Is CY7C1021CV33-10ZXI pin-compatible with CY7C1021BV33?
Yes, CY7C1021CV33-10ZXI is pin- and function-compatible with CY7C1021BV33 per Cypress documentation. Both share identical 44-pin SOJ/TSOP II pinouts, address/data/control signal assignments, and byte-enable logic. No PCB changes are needed for migration, though voltage tolerance (3.3 V only vs. 3.3 V/5 V tolerant) and timing specs differ.
What is the maximum operating frequency supported by CY7C1021CV33-10ZXI?
The device supports a maximum read/write cycle rate of 100 MHz, derived from its 10 ns tRC (read cycle time) and tWC (write cycle time). This assumes proper signal integrity, load capacitance ≤8 pF, and timing margins per the datasheet's AC test conditions using 3.3 V supply and industrial temperature range.
Does CY7C1021CV33-10ZXI require external refresh circuitry?
No. As a static RAM, CY7C1021CV33-10ZXI retains data indefinitely while powered and does not require refresh cycles. Its internal six-transistor cell design eliminates the need for periodic access or external refresh controllers-unlike DRAM or SDRAM devices.
Can CY7C1021CV33-10ZXI operate at 2.5 V?
No. The device is specified only for 3.3 V ±10% (2.97–3.63 V). Operation below 2.97 V violates the Absolute Maximum Ratings and may cause data corruption, timing violations, or failure to enter power-down mode. It is not backward-compatible with 2.5 V logic families.
CY7C1021CV33-10ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1021CV33-10ZXI FAQ
1.How can I place an order for CY7C1021CV33-10ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV33-10ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV33-10ZXI reliable?
The price and inventory of CY7C1021CV33-10ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-10ZXI is usually 5 days.
3.What payment methods are accepted for CY7C1021CV33-10ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-10ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV33-10ZXI?
CY7C1021CV33-10ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV33-10ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV33-10ZXI?
For technical support, including CY7C1021CV33-10ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-10ZXI requirements.
6.How does Aetrix verify that CY7C1021CV33-10ZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV33-10ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-10ZXI meets industry standards.
7.What is the process for return or replacement of CY7C1021CV33-10ZXI?
All CY7C1021CV33-10ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-10ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV33-10ZXI part is unused and in its original packaging.
Return procedure for CY7C1021CV33-10ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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