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Infineon Technologies CY7C1021CV33-12BAXI
- Part No.:
- CY7C1021CV33-12BAXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY7C1021CV33-12BAXI.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,537
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Product details
Overview
CY7C1021CV33-12BAXI from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns access time, 3.3 V supply, industrial temperature range (–40°C to +85°C), and automatic CE-controlled power-down mode. It supports independent byte write via BHE/BLE controls and is used in real-time industrial controllers requiring deterministic memory access and low standby current.
For engineers reviewing the CY7C1021CV33-12BAXI datasheet, CY7C1021CV33-12BAXI pinout, CY7C1021CV33-12BAXI application, or CY7C1021CV33-12BAXI equivalent, this page delivers verified timing specs, SOJ/TSOP II package mapping, byte-select operation details, and direct alternatives for SRAM replacement in legacy embedded systems.
Technical Context
The device implements a synchronous, non-volatile-independent 64K × 16-bit RAM array with dual-byte write enable (BHE/BLE) allowing granular 8-bit writes without full-word overhead. Address decoding uses full 16-bit A0–A15 inputs with no internal multiplexing.
All control signals-CE, WE, OE, BHE, BLE-are active-low and TTL/CMOS compatible. Output enable (OE) and chip enable (CE) jointly govern tri-state behavior: outputs enter high-Z when CE is HIGH, OE is HIGH, or during write cycles (WE LOW), ensuring clean bus isolation in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits); enables single-cycle parallel data transfer of 16-bit words without interleaving. |
| Access Time (tAA) | 12 ns max at VCC = 3.3 V, TA = –40°C to +85°C; guarantees deterministic read latency for real-time control loops. |
| Supply Voltage | 3.3 V ±10%; compatible with standard LVCMOS I/O domains and eliminates need for level-shifting in 3.3 V systems. |
| Active Current (ICC) | 85 mA max (industrial grade); defines worst-case power budget for sustained burst reads/writes. |
| Standby Current (ISB2) | 5 mA max (CMOS input mode); enables ultra-low-power sleep states when CE is deasserted. |
| Byte Write Control | BHE and BLE independently enable IO9–IO16 or IO1–IO8; permits partial-word updates without read-modify-write overhead. |
| Package Type | 44-pin 400-mil SOJ (Standard Outline J-Lead); provides proven thermal performance (θJA = 65.06°C/W) and socket compatibility. |
Pinout & Package
Package: 44-pin SOJ (400-mil body width), RoHS-compliant, lead-free finish. Pin pitch: 0.05 inches (1.27 mm). Body dimensions: 48.26 mm × 12.70 mm × 3.18 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Input | 16-bit unidirectional address bus; selects one of 65,536 memory locations directly-no address latching required. |
| IO1–IO8 / IO9–IO16 | Bidirectional Data I/O | Two independent 8-bit data ports; IO1–IO8 controlled by BLE, IO9–IO16 by BHE-enables concurrent byte-level writes. |
| CE | Chip Enable (Active Low) | Primary device select; forces full high-Z state on all I/Os when HIGH, enabling multi-SRAM bus sharing. |
| WE | Write Enable (Active Low) | Initiates write cycle when CE is LOW; transitions define write pulse boundaries per JEDEC timing standards. |
| OE | Output Enable (Active Low) | Enables output drivers only during reads; asserts high-Z on I/Os when HIGH-even if CE is LOW-preventing bus contention. |
| BLE / BHE | Byte Low/High Enable (Active Low) | Independent gating of lower/upper data bytes; allows 8-bit writes without disturbing adjacent byte in same word. |
| VCC | Power Supply | Single 3.3 V supply pin (dual pins: pins 11 & 33); reduces IR drop and improves noise margin in high-speed operation. |
| VSS | Ground | Dual ground pins (pins 12 & 34); lowers ground impedance and minimizes switching noise coupling into sensitive I/O paths. |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE Power-Down | Reduces ICC to 5 mA (ISB2) when CE is HIGH-eliminates need for external power-gating logic in battery-backed systems. |
| Independent Byte Write | Separate BHE/BLE controls allow simultaneous or staggered 8-bit writes to upper/lower word halves-critical for protocol stack buffers. |
| Tri-State Output Control | OE and CE jointly enforce high-Z on I/Os during deselect, write, or disable-ensures clean bus arbitration in shared-memory architectures. |
| Industrial Temperature Range | Rated for –40°C to +85°C operation with full 12 ns timing compliance-validated for deployment in factory automation and transportation ECUs. |
| Pb-Free SOJ Packaging | RoHS-compliant 44-pin SOJ with matte tin finish-supports lead-free reflow profiles and long-term supply chain sustainability. |
Applications
| Industrial PLC Memory Buffer | Automotive Engine Control Unit (ECU) |
|---|---|
|
Use Scenario: Stores real-time sensor fusion results and actuator command queues in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Primary working RAM for cyclic executive firmware; accessed every 1–10 ms with guaranteed ≤12 ns read latency. Use Value: Eliminates wait states in ARM Cortex-M4-based PLC CPUs, sustaining >80 MB/s sustained bandwidth under burst traffic. |
Use Scenario: Holds transient calibration tables and fault-log history in Tier-1 automotive engine management systems. IC Role / Device Role / Timing Role: Non-volatile shadow RAM for fast-access lookup tables; operates continuously across –40°C to +85°C ambient. Use Value: Enables sub-millisecond table lookups for fuel injection timing-meeting ISO 16750-4 thermal shock requirements. |
| Medical Imaging Frame Buffer | Avionics Display Processor Cache |
|
Use Scenario: Buffers raw pixel data between FPGA-based image acquisition and DSP-based enhancement pipelines in portable ultrasound units. IC Role / Device Role / Timing Role: Dual-port-like interface via BHE/BLE for concurrent write (FPGA) and read (DSP) of disjoint byte lanes. Use Value: Avoids external FIFOs or arbitration logic-reducing BOM count and board area in space-constrained handheld devices. |
Use Scenario: Caches graphics primitives and font glyphs for ARINC 661-compliant cockpit display generators. IC Role / Device Role / Timing Role: High-reliability SRAM with automatic power-down during display idle periods to meet DO-254 power budgets. Use Value: Achieves <5 µA effective standby current via CE gating-extending backup battery life beyond 72 hours during flight standby. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-12IN | 1-Mbit (128K × 8), 12 ns access, 3.3 V, same SOJ-44 package; lacks BHE/BLE-only full-byte or full-word writes. | Requires software-level byte masking for partial writes; increases CPU overhead in protocols needing 8-bit field updates. | Select when system uses 8-bit data buses or prioritizes second-source availability over byte-select flexibility. |
| IS61LV1024-12MLI | 1-Mbit (64K × 16), 12 ns, 3.3 V, TSOP-II-44; identical pinout and BHE/BLE support but higher ISB2 (10 mA vs. 5 mA). | Higher standby current limits use in battery-critical avionics or medical wearables where CE-gated sleep must be ultra-low. | Select when footprint compatibility is mandatory and thermal profile (θJA = 76.92°C/W) is acceptable for target PCB layout. |
Compared with AS6C1008-12IN and IS61LV1024-12MLI, CY7C1021CV33-12BAXI uniquely combines industrial-grade 12 ns timing, true dual-byte write capability, and 5 mA CMOS standby-making it optimal for resource-constrained real-time systems requiring both speed and energy efficiency.
Availability
CY7C1021CV33-12BAXI is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, and medical imaging subsystems requiring stable component supply across extended product lifecycles.
Supply support for CY7C1021CV33-12BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications.
CY7C1021CV33 belongs to Cypress's legacy high-speed parallel SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time embedded control systems.
FAQ
Is CY7C1021CV33-12BAXI pin-compatible with CY7C1021BV33?
Yes-CY7C1021CV33-12BAXI is functionally and pin-compatible with CY7C1021BV33, including identical SOJ-44 pinout, BHE/BLE assignment, and control signal timing. The 'V33' suffix denotes 3.3 V operation for both families, and migration requires no PCB changes.
What is the maximum clock frequency supported for continuous read/write cycling?
The device has no internal clock; it is asynchronous. Maximum sustained operation is governed by tRC = 12 ns, supporting up to 83.3 MHz random access throughput. Continuous burst transfers are limited only by system bus timing margins and load capacitance.
Does CY7C1021CV33-12BAXI support battery backup operation?
No-it lacks built-in battery-switching circuitry or NVSRAM functionality. However, its 5 mA ISB2 standby current enables external battery-backed power schemes using discrete diode-OR or PMIC supervision-common in industrial data loggers.
Can IO pins be driven while CE is HIGH?
No-when CE is HIGH, all IO pins (IO1–IO16) enter high-impedance state regardless of OE, WE, or BHE/BLE status. This is explicitly guaranteed in the datasheet's "Output Disable" condition and prevents bus contention in multi-SRAM configurations.
CY7C1021CV33-12BAXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (7x7)
CY7C1021CV33-12BAXI FAQ
1.How can I place an order for CY7C1021CV33-12BAXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV33-12BAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV33-12BAXI reliable?
The price and inventory of CY7C1021CV33-12BAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-12BAXI is usually 5 days.
3.What payment methods are accepted for CY7C1021CV33-12BAXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-12BAXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV33-12BAXI?
CY7C1021CV33-12BAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV33-12BAXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV33-12BAXI?
For technical support, including CY7C1021CV33-12BAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-12BAXI requirements.
6.How does Aetrix verify that CY7C1021CV33-12BAXI is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV33-12BAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-12BAXI meets industry standards.
7.What is the process for return or replacement of CY7C1021CV33-12BAXI?
All CY7C1021CV33-12BAXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-12BAXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV33-12BAXI part is unused and in its original packaging.
Return procedure for CY7C1021CV33-12BAXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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