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Infineon Technologies CY7C1021CV33-12BAXIT
- Part No.:
- CY7C1021CV33-12BAXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY7C1021CV33-12BAXIT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,845
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Product details
Overview
CY7C1021CV33-12BAXIT from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns access time, 3.3 V supply, and industrial temperature range (–40°C to +85°C). It features independent byte write control (BHE/BLE), automatic CE-controlled power-down (ISB2 = 5 mA), and SOJ-44 package. Used in real-time industrial controllers requiring deterministic low-latency memory access.
For engineers reviewing the CY7C1021CV33-12BAXIT datasheet, CY7C1021CV33-12BAXIT pinout, CY7C1021CV33-12BAXIT application, or CY7C1021CV33-12BAXIT equivalent, this page delivers verified timing parameters, byte-enable logic behavior, SOJ-44 terminal mapping, and functionally matched alternatives for SRAM replacement in legacy embedded systems.
Technical Context
The device implements a synchronous, non-volatile-independent 64K × 16-bit memory array with dual-byte write enable architecture: BLE controls IO1–IO8 (lower byte), BHE controls IO9–IO16 (upper byte). All address lines A0–A15 are single-ended CMOS inputs with VIH ≥ 2.0 V and VIL ≤ 0.8 V at VCC = 3.3 V ±10%.
Read operations require CE and OE asserted low while WE is high; write operations require CE and WE low with active BLE or BHE. Output drivers support 8 mA sink current (VOL = 0.4 V), and tri-state transitions (tHZOE = 6 ns, tLZCE = 3 ns) meet tight bus turnaround requirements in multiplexed data-path designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits); supports 16-bit parallel data bus without external width expansion. |
| Access Time (tAA) | 12 ns max at TA = –40°C to +85°C; guarantees deterministic read latency in hard real-time control loops. |
| VCC Supply | 3.3 V ±10%; compatible with standard LVTTL/CMOS 3.3 V I/O domains and eliminates level-shifting overhead. |
| Active Current (ICC) | 85 mA max at fMAX = 83.3 MHz; enables thermal design within 44-pin SOJ's ΘJA = 65.06°C/W limit. |
| Standby Current (ISB2) | 5 mA max (CMOS input mode); reduces idle power by >94% vs active mode in intermittent-access applications. |
| Byte Write Control | Dual active-low enables (BLE, BHE); allows independent 8-bit writes without read-modify-write cycles. |
| Operating Temperature | –40°C to +85°C (Industrial grade); qualified for use in factory automation PLCs and motor drive firmware storage. |
Pinout & Package
Package: 44-pin 400-mil SOJ (Small Outline J-Lead), lead-free, RoHS-compliant. Body dimensions: 18.42 mm × 10.16 mm × 3.81 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Input | 16-bit unidirectional address bus; selects one of 65,536 memory locations; TTL/CMOS compatible thresholds. |
| IO1–IO8 | Bidirectional Data (Lower Byte) | 8-bit data path enabled only when BLE = LOW; tri-stated when BLE = HIGH or CE = HIGH. |
| IO9–IO16 | Bidirectional Data (Upper Byte) | 8-bit data path enabled only when BHE = LOW; isolated from lower byte for true independent byte writes. |
| CE | Chip Enable (Active Low) | Global device select; initiates automatic power-down when HIGH (ISB2 = 5 mA) and disables all outputs. |
| WE | Write Enable (Active Low) | Controls write/read mode: LOW = write (with CE LOW), HIGH = read (with CE/OE LOW). |
| OE | Output Enable (Active Low) | Enables output drivers during reads; forces IOx into high-Z when HIGH, enabling bus sharing. |
| BLE / BHE | Byte Write Enable (Active Low) | Independent gating of lower/upper data bytes; eliminates need for external byte-mask logic. |
| VCC | Power Supply | Two dedicated 3.3 V pins (pins 11, 33) reduce IR drop and improve noise immunity on data bus. |
| VSS | Ground | Two dedicated ground pins (pins 12, 34) provide low-inductance return path for switching currents. |
Key Features
| Feature | Design Value |
|---|---|
| Independent byte write control | Separate BLE/BHE inputs allow concurrent or isolated 8-bit writes-no read-modify-write required for partial updates. |
| Automatic CE power-down | Reduces standby current to 5 mA (ISB2) with no external control logic; triggered solely by CE HIGH assertion. |
| High-speed 12 ns access | Meets tAA ≤ 12 ns at full industrial temperature range, enabling direct interface with 80 MHz microcontrollers. |
| SOJ-44 pinout compatibility | Pin-for-pin compatible with CY7C1021BV33; enables drop-in replacement in existing PCB layouts without redesign. |
| Low-power CMOS process | 325 mW max active power (at 85 mA, 3.3 V) supports thermally constrained industrial enclosures. |
Applications
| Industrial PLC Data Buffer | Automotive Engine Control Unit (ECU) Parameter Storage |
|---|---|
|
Use Scenario: Stores real-time I/O scan data and intermediate calculation results in modular PLC backplanes with 16-bit parallel buses. IC Role / Device Role / Timing Role: High-reliability, low-latency scratchpad memory interfaced directly to ARM9-based controller via static bus interface. Use Value: 12 ns tAA ensures sub-100 ns total memory cycle time, meeting 10 kHz deterministic I/O update deadlines. |
Use Scenario: Holds calibration tables and sensor compensation coefficients in Tier-1 automotive ECUs operating across –40°C to +85°C. IC Role / Device Role / Timing Role: Non-volatile-independent fast SRAM for runtime-critical lookup tables accessed during fuel injection timing windows. Use Value: Industrial-grade temperature qualification and 5 mA ISB2 minimize thermal drift and battery drain during key-off states. |
| Medical Imaging Frame Buffer | Avionics Display Controller Memory |
|
Use Scenario: Buffers uncompressed 16-bit grayscale image frames (e.g., ultrasound line data) before DSP processing in portable diagnostic devices. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as single-cycle-access frame store synchronized to pixel clock domain. Use Value: Independent BLE/BHE enables simultaneous write of new line data and read of prior line-eliminating pipeline stalls. |
Use Scenario: Stores display list instructions and glyph bitmaps in DO-254-certified cockpit display units with strict EMI and reliability requirements. IC Role / Device Role / Timing Role: Radiation-tolerant-qualified SRAM (via Cypress automotive-A/E screening) used for critical UI rendering buffer. Use Value: SOJ-44 package provides mechanical robustness and solder-joint reliability superior to TSOP in high-vibration environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV102416-12MLI | 12 ns access, same 64K × 16 organization, but uses TSOP-44 package and lacks BHE/BLE separation (single UB/LB pin). | Requires external logic to emulate independent byte writes; not pin-compatible with SOJ-44 footprint. | Select only if board redesign accommodates TSOP and simplified byte control suffices. |
| AS6C1008-12ZIN | 12 ns access, 128K × 8 organization (not 64K × 16); requires two devices for 16-bit bus; no BHE/BLE support. | Increases component count and board area; incompatible with single-chip 16-bit interface requirement. | Use only when memory depth expansion (128K) outweighs layout and control complexity penalties. |
Compared with IS61LV102416-12MLI and AS6C1008-12ZIN, CY7C1021CV33-12BAXIT uniquely delivers pin-compatible SOJ-44 placement, true dual-byte write capability, and guaranteed industrial temperature operation without interface translation.
Availability
CY7C1021CV33-12BAXIT is available at Aetrix Electronics and suitable for industrial PLCs, automotive engine control units, and medical imaging subsystems requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1021CV33-12BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable logic solutions for industrial and automotive markets.
CY7C1021CV33 belongs to Cypress's high-speed parallel SRAM product line, designed specifically for deterministic, low-latency data buffering in real-time embedded systems with stringent thermal and reliability requirements.
FAQ
Is CY7C1021CV33-12BAXIT pin-compatible with CY7C1021BV33?
Yes - CY7C1021CV33-12BAXIT is fully pin- and function-compatible with CY7C1021BV33, including identical SOJ-44 pinout, address/data/control signal assignments, and byte-enable logic. The 'V' suffix denotes enhanced voltage tolerance and improved power-down behavior over the 'B' version.
What is the maximum clock frequency supported for continuous read/write cycling?
The device supports a maximum read/write cycle time (tRC) of 12 ns, corresponding to 83.3 MHz maximum sustained bus frequency. This assumes proper setup/hold timing compliance and load capacitance ≤30 pF per data line, as specified in Figure 3(a) of the datasheet.
Does CY7C1021CV33-12BAXIT support true independent byte writes without read-modify-write?
Yes - the separate BLE (pins 39) and BHE (pin 40) inputs allow simultaneous or isolated writes to IO1–IO8 and IO9–IO16. When only BLE is asserted, only the lower byte is updated; when only BHE is asserted, only the upper byte changes - no internal read cycle is required.
Can this SRAM be used with 5 V tolerant microcontrollers?
No - CY7C1021CV33-12BAXIT is strictly a 3.3 V core and I/O device (VCC = 3.3 V ±10%). Its inputs tolerate up to VCC + 0.3 V (3.6 V max), and outputs swing 0–3.3 V. Direct interface with 5 V logic requires level-shifting circuitry.
CY7C1021CV33-12BAXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (7x7)
CY7C1021CV33-12BAXIT FAQ
1.How can I place an order for CY7C1021CV33-12BAXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV33-12BAXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV33-12BAXIT reliable?
The price and inventory of CY7C1021CV33-12BAXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-12BAXIT is usually 5 days.
3.What payment methods are accepted for CY7C1021CV33-12BAXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-12BAXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV33-12BAXIT?
CY7C1021CV33-12BAXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV33-12BAXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV33-12BAXIT?
For technical support, including CY7C1021CV33-12BAXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-12BAXIT requirements.
6.How does Aetrix verify that CY7C1021CV33-12BAXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV33-12BAXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-12BAXIT meets industry standards.
7.What is the process for return or replacement of CY7C1021CV33-12BAXIT?
All CY7C1021CV33-12BAXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-12BAXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV33-12BAXIT part is unused and in its original packaging.
Return procedure for CY7C1021CV33-12BAXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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