Infineon Technologies CY7C1021CV33-12VXCT

Overview

CY7C1021CV33-12VXCT from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns maximum access time, 3.3 V supply voltage, automatic CE-controlled power-down mode, and independent byte write enable (BHE/BLE) for dual 8-bit data bus control. It operates across industrial temperature range (–40°C to +85°C) and is used in real-time embedded controllers requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1021CV33-12VXCT datasheet, CY7C1021CV33-12VXCT pinout, CY7C1021CV33-12VXCT application, or CY7C1021CV33-12VXCT equivalent, this page delivers verified timing parameters, SOJ/TSOP II package mapping, byte-select functionality, and automotive-grade thermal performance data directly applicable to SRAM-based FPGA configuration buffers, industrial PLC data logging, and legacy microcontroller memory expansion.

Technical Context

The device implements a synchronous, non-volatile-independent 64K × 16-bit memory array with TTL-compatible input thresholds and CMOS-level output drive. Its dual-byte write architecture enables partial-word writes without read-modify-write cycles, reducing bus contention in multiprocessor systems.

Access timing is governed by tAA = 12 ns (max), tRC = 12 ns (max), and tPD = 12 ns (CE HIGH to power-down), with guaranteed tHZOE = 6 ns and tHZCE = 6 ns for fast output disable. Standby current is 5 mA (CMOS inputs) or 20 mA (TTL inputs) under industrial conditions.

Key Specifications

Pinout & Package

Package: 44-pin SOJ (400-mil) or TSOP II - leaded, surface-mount, RoHS-compliant. Pin pitch: 1.27 mm. Body width: 10.16 mm. Compatible with automated placement and reflow per IPC-J-STD-020D.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV102416AL-12MLI and AS6C1008-12ZIN, CY7C1021CV33-12VXCT uniquely delivers true independent byte write control in a pin-compatible 44-pin SOJ/TSOP II package, enabling deterministic partial-word updates essential for industrial protocol stacks and legacy MCU expansion without added logic or layout changes.

Availability

CY7C1021CV33-12VXCT is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration memory, and legacy microcontroller expansion requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1021CV33-12VXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

CY7C1021CV33 belongs to Cypress's high-speed parallel SRAM product line, designed specifically for deterministic, low-latency memory expansion in real-time embedded systems where bus timing predictability and industrial reliability are mandatory.

FAQ

What is the maximum operating frequency supported by CY7C1021CV33-12VXCT?

The device supports up to 83 MHz bus operation, derived from its 12 ns maximum access time (tAA). This is calculated as 1 / 12 ns ≈ 83.3 MHz. It is validated for use with microcontrollers and FPGAs whose external memory interfaces operate at ≤83 MHz without wait states, including Renesas SH-2, TI TMS320F28xx, and Xilinx Spartan-3 configuration engines.

Does CY7C1021CV33-12VXCT require external pull-up resistors on BHE/BLE pins?

No. BHE and BLE are active-Low inputs with standard TTL-compatible thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and do not require external pull-ups when driven directly by CMOS or TTL logic. Internal weak pull-downs are not present; unused pins must be actively driven LOW or HIGH to avoid floating states that could cause unintended byte writes.

Can CY7C1021CV33-12VXCT be used in automotive applications?

Yes-specifically in Automotive-A (–40°C to +85°C) and Automotive-E (–40°C to +125°C) grades. The -12VXCT variant is rated for Industrial grade (–40°C to +85°C), which overlaps with Automotive-A. For under-hood applications requiring +125°C operation, the -12VXCT is not qualified; the Automotive-E version (e.g., CY7C1021CV33-12VXIT) must be selected instead.

How does automatic power-down behave when CE is held HIGH during reset sequences?

When CE is held HIGH, the device enters automatic power-down mode with ISB2 = 5 mA (CMOS inputs) or ISB1 = 20 mA (TTL inputs), regardless of OE or WE state. Output drivers enter high-impedance, and internal array biasing is reduced. Power resumes within tPU = 0 ns (design-guaranteed) upon CE going LOW, with first valid data appearing after tAA = 12 ns.