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Infineon Technologies CY7C1021CV33-12VXE
- Part No.:
- CY7C1021CV33-12VXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021CV33-12VXE.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,543
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Product details
Overview
CY7C1021CV33-12VXE from Infineon Technologies (formerly Cypress) is a 1-Mbit (64 K × 16) automotive-grade CMOS static RAM with 12 ns maximum access time, 3.3 V supply, and –40 °C to +125 °C operation (Automotive-E grade). It supports independent byte write via BHE/BLE controls, automatic CE-based power-down, and is offered in 44-pin SOJ/TSOP II packages.
For engineers reviewing the CY7C1021CV33-12VXE datasheet, CY7C1021CV33-12VXE pinout, CY7C1021CV33-12VXE application, or CY7C1021CV33-12VXE equivalent, key selection criteria include tAA = 12 ns read timing, ISB2 = 10 mA standby current at 125 °C, dual-byte enable architecture, and Pb-free 44-pin SOJ packaging for high-reliability automotive memory subsystems.
Technical Context
This SRAM implements a synchronous, non-volatile-adjacent, byte-selectable 64K × 16-bit memory array with TTL-compatible inputs and CMOS-level outputs. Its dual active-Low byte enables (BHE, BLE) allow independent 8-bit writes to upper and lower data words without affecting adjacent bytes.
The device uses automatic CE-driven power-down mode to reduce ICC to 10 mA (max) in standby at 125 °C, and features tristate I/O control coordinated by OE, CE, and WE with defined low-Z and high-Z transition times (e.g., tHZOE ≤ 6 ns, tLZCE ≥ 3 ns).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64 K × 16 bits (1,048,576 total bits), enabling 16-bit parallel data bus interfacing |
| Access Time (tAA) | 12 ns max at –40 °C to +125 °C, defining minimum clock-to-data latency in high-speed microcontroller interfaces |
| Supply Voltage | 3.3 V ±10%, compatible with modern automotive MCU I/O domains and requiring no level-shifting circuitry |
| Standby Current (ISB2) | 10 mA max at 125 °C, enabling low-power retention during ECU sleep modes without external power gating |
| Operating Temperature | –40 °C to +125 °C (Automotive-E grade), qualified per AEC-Q100 Grade 1 requirements for engine bay applications |
| I/O Drive Strength | VOL = 0.4 V at 8 mA sink, VOH = 2.4 V at –4.0 mA source, ensuring robust noise margin in noisy vehicle harness environments |
| Package Type | 44-pin SOJ (400 mil), surface-mount compatible with standard reflow profiles and automotive board assembly standards |
Pinout & Package
Package: 44-pin SOJ (Small Outline J-Lead), 400 mil body width, lead pitch 0.050", JEDEC MS-024AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus interface selecting one of 65,536 memory locations |
| I/O1–I/O16 | Bidirectional Data I/O | 16-bit parallel data path; direction controlled by OE, CE, and WE states |
| CE | Chip Enable (Active Low) | Primary chip select; asserts internal logic and enables power-down when HIGH |
| WE | Write Enable (Active Low) | Controls write initiation; LOW with CE LOW initiates write cycle |
| OE | Output Enable (Active Low) | Enables output drivers; HIGH forces I/O pins into high-impedance state |
| BHE / BLE | Byte High / Low Enable (Active Low) | Selectively enables write/read of I/O9–I/O16 (BHE) or I/O1–I/O8 (BLE) |
| VCC | Power Supply | 3.3 V core and I/O supply; two dedicated pins ensure low-impedance distribution |
| VSS | Ground | System ground reference; two dedicated pins minimize ground bounce in burst transfers |
Key Features
| Feature | Design Value |
|---|---|
| Independent Byte Write Control | Separate BHE/BLE signals allow concurrent or isolated 8-bit writes to upper/lower data words without read-modify-write overhead |
| Automatic CE Power-Down | Reduces ICC to 10 mA max at 125 °C when CE is HIGH, eliminating need for external power management circuitry |
| Automotive Temperature Range | Qualified for –40 °C to +125 °C operation (AEC-Q100 Grade 1), supporting under-hood and transmission control unit deployments |
| Pb-Free Packaging | RoHS-compliant 44-pin SOJ package meets automotive environmental compliance requirements without solderability compromise |
| High-Speed Read Timing | tAA = 12 ns and tDOE = 6 ns ensure compatibility with 83 MHz CPU buses in real-time safety-critical ECUs |
Applications
| Engine Control Unit (ECU) Data Buffer | Advanced Driver Assistance System (ADAS) Sensor Cache |
|---|---|
Use Scenario: Temporary storage of real-time combustion parameter logs and fault code history in gasoline/diesel engine controllers. IC Role / Device Role / Timing Role: High-reliability, low-latency SRAM acting as volatile working memory for 32-bit RISC microcontrollers with burst-access patterns. Use Value: 12 ns tAA and dual-byte write support enable deterministic response to misfire detection interrupts within 10 µs window. | Use Scenario: Local frame buffering for radar preprocessing units in 77 GHz ADAS modules operating near powertrain heat sources. IC Role / Device Role / Timing Role: Temperature-stable memory buffer interfacing between FPGA-based signal processors and CAN FD communication stacks. Use Value: Automotive-E grade qualification ensures uninterrupted operation at 125 °C ambient, avoiding thermal throttling-induced latency spikes. |
| Electric Power Steering (EPS) Motor Controller | Body Control Module (BCM) Diagnostic Log Storage |
Use Scenario: Storing torque compensation tables and motor position history during active steering assist cycles. IC Role / Device Role / Timing Role: Low-power standby SRAM retaining calibration data during vehicle ignition-off periods while supporting rapid wake-up on CAN bus activity. Use Value: ISB2 = 10 mA max at 125 °C allows continuous logging without exceeding thermal envelope of EPS module housing. | Use Scenario: Capturing intermittent electrical fault events (e.g., door lock actuator shorts) across multiple vehicle sleep/wake cycles. IC Role / Device Role / Timing Role: Non-battery-backed volatile memory used with watchdog-timed refresh to prevent data corruption during brown-out conditions. Use Value: Automatic CE power-down reduces average current draw below 15 µA during 99% of BCM idle time, extending battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV1024-12TQLI | 12 ns access, 3.3 V, 64 K × 16, but lacks BHE/BLE byte control and automotive temperature rating | Industrial/commercial use only; not AEC-Q100 qualified | Select only for non-automotive designs where byte-select capability is unnecessary |
| AS6C1008-12TIN | 12 ns access, 3.3 V, 64 K × 16, supports byte write but rated only to 85 °C (Industrial grade) | Unsuitable for under-hood deployment; requires derating above 85 °C | Acceptable for cabin-mounted modules like infotainment or HVAC control where ambient stays below 85 °C |
Compared with IS61LV1024-12TQLI and AS6C1008-12TIN, CY7C1021CV33-12VXE uniquely delivers AEC-Q100 Grade 1 qualification, true dual-byte write control, and guaranteed 12 ns performance at 125 °C - critical for safety-related ECU memory subsystems where timing predictability and thermal resilience are non-negotiable.
Availability
CY7C1021CV33-12VXE is available at Aetrix Electronics and suitable for engine control units, ADAS sensor processing modules, electric power steering systems, and body control modules requiring stable component supply across extended automotive lifecycles.
Supply support for CY7C1021CV33-12VXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and security solutions.
CY7C1021CV33 belongs to Infineon's legacy Cypress automotive SRAM product line, engineered specifically for high-reliability, temperature-resilient memory in engine, transmission, and ADAS control units.
FAQ
Is CY7C1021CV33-12VXE pin-compatible with CY7C1021CV33-10VXE?
Yes - both share identical 44-pin SOJ pinout, address/data bus mapping, and control signal assignments. The only difference is access time: -12VXE guarantees tAA ≤ 12 ns, while -10VXE guarantees tAA ≤ 10 ns. No PCB redesign is needed when substituting between these speed grades.
Does CY7C1021CV33-12VXE require external pull-up resistors on BHE/BLE pins?
No - BHE and BLE are active-Low inputs with standard TTL-compatible thresholds (VIL ≤ 0.8 V, VIH ≥ 2.0 V) and do not require external biasing. They must be driven actively LOW to enable byte writes; leaving them unconnected risks undefined behavior due to floating inputs.
Can CY7C1021CV33-12VXE operate with 2.5 V supply?
No - the device is specified only for 3.3 V ±10% (2.97 V to 3.63 V). Operation outside this range violates Absolute Maximum Ratings and may cause data corruption, increased leakage, or permanent damage. It is not backward-compatible with 2.5 V logic families.
What is the maximum sustained data transfer rate supported by CY7C1021CV33-12VXE?
At tRC = 12 ns minimum read cycle time, the theoretical peak sustained rate is 83.3 MT/s (million transfers per second) for sequential accesses. Real-world throughput depends on bus protocol overhead, address setup/hold timing, and controller arbitration - typical ECU implementations achieve 60–70 MT/s in burst mode.
CY7C1021CV33-12VXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1021CV33-12VXE FAQ
1.How can I place an order for CY7C1021CV33-12VXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV33-12VXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV33-12VXE reliable?
The price and inventory of CY7C1021CV33-12VXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-12VXE is usually 5 days.
3.What payment methods are accepted for CY7C1021CV33-12VXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-12VXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV33-12VXE?
CY7C1021CV33-12VXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV33-12VXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV33-12VXE?
For technical support, including CY7C1021CV33-12VXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-12VXE requirements.
6.How does Aetrix verify that CY7C1021CV33-12VXE is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV33-12VXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-12VXE meets industry standards.
7.What is the process for return or replacement of CY7C1021CV33-12VXE?
All CY7C1021CV33-12VXE units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-12VXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV33-12VXE part is unused and in its original packaging.
Return procedure for CY7C1021CV33-12VXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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