Infineon Technologies CY7C1021CV33-12VXET
- Part No.:
- CY7C1021CV33-12VXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021CV33-12VXET.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:3,974
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1021CV33-12VXET from Infineon Technologies (formerly Cypress) is an automotive-grade 1-Mbit (64 K × 16) CMOS static RAM with 12 ns access time, 3.3 V supply, and dual-byte write control via BHE/BLE. It supports Automotive-E temperature range (–40 °C to +125 °C), delivers max 90 mA active current, and features automatic CE-controlled power-down for low standby consumption in engine control units and ADAS domain controllers.
For engineers reviewing the CY7C1021CV33-12VXET datasheet, CY7C1021CV33-12VXET pinout, CY7C1021CV33-12VXET application, or CY7C1021CV33-12VXET equivalent, this page provides verified timing parameters, package-specific terminal mapping, byte-select functionality details, and validated alternatives for automotive memory subsystem design.
Technical Context
The CY7C1021CV33-12VXET implements a synchronous, non-volatile-independent 64K × 16-bit SRAM array with fully independent upper- and lower-byte write enables (BHE/BLE), enabling selective 8-bit writes without read-modify-write cycles. Its TTL/CMOS-compatible inputs support direct interfacing with microcontrollers and ASICs in safety-critical domains.
It uses automatic chip-enable power-down to reduce ICC to ≤10 mA (Automotive-E) when deselected, and guarantees tAA = 12 ns, tRC = 12 ns, and tPD = 12 ns under full automotive temperature and voltage conditions (VCC = 3.3 V ±10%). Output drive strength meets –4 mA VOH and 8 mA VOL specifications at VCC min.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64 K × 16 bits (1,048,576 total bits); supports parallel 16-bit data bus interface |
| Access Time (tAA) | 12 ns maximum at –40 °C to +125 °C; ensures deterministic timing for real-time ECU firmware execution |
| Supply Voltage | 3.3 V ±10%; compatible with standard automotive 3.3 V power rails and LDO outputs |
| Operating Temperature | Automotive-E grade: –40 °C to +125 °C ambient; qualified per AEC-Q100 Grade 1 |
| Active Current (ICC) | ≤90 mA max at fMAX; enables thermal budgeting in compact engine bay PCB layouts |
| Standby Current (ISB2) | ≤10 mA max with CMOS-level CE deassertion; reduces quiescent draw during sleep modes |
| I/O Drive Strength | VOH ≥2.4 V @ –4 mA, VOL ≤0.4 V @ 8 mA; ensures noise margin >0.4 V in noisy vehicle environments |
Pinout & Package
Package: 44-pin 400-mil SOJ (Small Outline J-Lead), RoHS-compliant, lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 65,536 memory locations; TTL/CMOS compatible |
| I/O1–I/O8 | Lower-Byte Bidirectional Data | Data path for D0–D7; enabled only when BLE = LOW; high-impedance when disabled |
| I/O9–I/O16 | Upper-Byte Bidirectional Data | Data path for D8–D15; enabled only when BHE = LOW; isolated from lower byte |
| CE | Chip Enable (Active LOW) | Primary device select; triggers automatic power-down when HIGH; controls tPD timing |
| WE | Write Enable (Active LOW) | Initiates write cycle when CE and WE both LOW; defines tWC (12 ns min) and tPWE (8 ns min) |
| OE | Output Enable (Active LOW) | Enables output drivers during read; determines tDOE (6 ns) and tHZOE (6 ns) delays |
| BHE / BLE | Byte High / Low Enable (Active LOW) | Independent 8-bit write masking; eliminates need for external byte logic or RMW sequences |
| VCC | Power Supply | Two dedicated 3.3 V pins (pins 11, 33); reduces IR drop and improves PSRR |
| VSS | Ground | Two dedicated ground pins (pins 12, 34); enhances signal integrity and EMI resilience |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Byte Write Control | Independent BHE/BLE pins enable simultaneous or selective 8-bit writes without read-modify-write overhead |
| Automotive Temperature Support | Qualified for –40 °C to +125 °C operation (AEC-Q100 Grade 1); validated across full VCC and timing margins |
| Automatic Power-Down | CE-driven sleep mode reduces ICC to ≤10 mA; eliminates need for external power-gating circuitry |
| Low-Impact I/O Interface | Input leakage ≤±12 µA and output leakage ≤±12 µA at max temp; minimizes bus contention current |
| Robust Signal Integrity | Specified tLZ/tHZ times (0–6 ns) and 8 pF input/output capacitance ensure clean edge transitions on 16-bit buses |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Real-time storage of sensor fusion buffers and actuator command histories in diesel/gasoline ECU mainboards. IC Role / Device Role / Timing Role: High-speed scratchpad memory interfaced directly to 16-bit MCU data bus; accessed at 83 MHz (12 ns cycle). Use Value: 12 ns tAA and dual-byte write eliminate pipeline stalls during CAN message logging and PID loop updates. |
Use Scenario: Frame buffering for radar pre-processing pipelines in 77 GHz front-end modules. IC Role / Device Role / Timing Role: Local SRAM for FPGA-based signal conditioning; synchronized to 100 MHz clock with deterministic read latency. Use Value: Independent BHE/BLE allows parallel write of I/Q channel data into separate 8-bit lanes, doubling effective throughput. |
| Body Control Module (BCM) | Infotainment Head Unit |
|
Use Scenario: Storing dynamic configuration tables (lighting profiles, window position maps) in distributed BCM nodes. IC Role / Device Role / Timing Role: Nonvolatile shadow memory backup target; accessed during boot via SPI-to-parallel bridge IC. Use Value: ≤10 mA ISB2 enables always-on retention during vehicle sleep mode without draining battery. |
Use Scenario: Audio DSP instruction cache extension in multi-core infotainment SoCs with limited on-die SRAM. IC Role / Device Role / Timing Role: External code/data memory mapped into ARM Cortex-A72 AXI bus; accessed via burst reads. Use Value: 44-pin SOJ footprint fits tight layout constraints near SoC BGA; dual VCC/VSS pins suppress switching noise on audio analog sections. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV102416AL-12MLI | 12 ns access, 3.3 V, –40 °C to +85 °C (Industrial, not AEC-Q100); no BHE/BLE; single WE only | Limited to non-safety-critical body electronics; lacks automotive qualification and byte-select flexibility | Select only if AEC-Q100 is not required and byte masking is handled externally. |
| AS6C1008-12TIN | 12 ns access, 3.3 V, –40 °C to +125 °C; AEC-Q100 Grade 1; but 512 K × 16 organization (512 KB vs 128 KB) | Higher density suits larger firmware overlays; different pinout requires PCB redesign | Choose when >64 K words needed and board layout allows 48-TSOP II rework. |
Compared with IS61LV102416AL-12MLI and AS6C1008-12TIN, the CY7C1021CV33-12VXET uniquely combines AEC-Q100 Grade 1 qualification, true dual-byte write capability, and 44-pin SOJ compatibility - making it optimal for cost-sensitive, space-constrained automotive control modules requiring deterministic 8-bit sub-word writes.
Availability
CY7C1021CV33-12VXET is available at Aetrix Electronics and suitable for engine control units, ADAS radar processors, body control modules, and infotainment head units requiring stable component supply across extended automotive temperature ranges and long production lifecycles.
Supply support for CY7C1021CV33-12VXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive MCUs, and memory solutions for industrial and transportation applications.
This device belongs to Infineon's legacy Cypress automotive SRAM product line, designed specifically for deterministic, low-latency data storage in safety-critical electronic control units where reliability under extreme thermal stress is mandatory.
FAQ
What is the maximum operating frequency supported by CY7C1021CV33-12VXET?
The device supports a maximum read/write cycle time (tRC) of 12 ns, corresponding to 83.3 MHz maximum sustained operation. This is guaranteed across the full Automotive-E temperature range (–40 °C to +125 °C) and 3.3 V ±10% supply, with all timing parameters measured using specified AC test loads and waveforms per JEDEC standards.
Does CY7C1021CV33-12VXET require external pull-up resistors on BHE, BLE, or OE?
No external pull-ups are required. All control inputs (BHE, BLE, OE, CE, WE) are TTL/CMOS-compatible with VIH ≥2.0 V and VIL ≤0.8 V at VCC = 3.3 V. Internal input structure ensures valid logic levels with direct connection to MCU GPIOs or ASIC control outputs without additional biasing.
Can CY7C1021CV33-12VXET be used in place of CY7C1021CV33-10VXET?
Yes, it is pin- and function-compatible, but with slower timing: tAA/tRC increases from 10 ns to 12 ns. System-level timing margin must be re-verified, especially for setups relying on minimum 10 ns access. Power consumption remains identical; no changes to PCB layout or firmware are needed beyond timing validation.
Is the 44-pin SOJ package of CY7C1021CV33-12VXET RoHS-compliant and lead-free?
Yes, the "VXET" suffix denotes a lead-free, RoHS-compliant 44-pin SOJ package with matte tin finish. It meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) and is qualified for reflow soldering per IPC/JEDEC J-STD-020D. No lead content is present in die attach, bond wires, or terminations.
CY7C1021CV33-12VXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1021CV33-12VXET FAQ
1.How can I place an order for CY7C1021CV33-12VXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV33-12VXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV33-12VXET reliable?
The price and inventory of CY7C1021CV33-12VXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-12VXET is usually 5 days.
3.What payment methods are accepted for CY7C1021CV33-12VXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-12VXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV33-12VXET?
CY7C1021CV33-12VXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV33-12VXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV33-12VXET?
For technical support, including CY7C1021CV33-12VXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-12VXET requirements.
6.How does Aetrix verify that CY7C1021CV33-12VXET is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV33-12VXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-12VXET meets industry standards.
7.What is the process for return or replacement of CY7C1021CV33-12VXET?
All CY7C1021CV33-12VXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-12VXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV33-12VXET part is unused and in its original packaging.
Return procedure for CY7C1021CV33-12VXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1021CV33-12VXET Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

