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Infineon Technologies CY7C1021CV33-12VXI

Part No.:
CY7C1021CV33-12VXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1021CV33-12VXI.pdf
Description:
IC SRAM 1MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,813

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Product details

Overview

CY7C1021CV33-12VXI from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns maximum access time, 3.3 V supply, and industrial temperature range (–40°C to +85°C). It features independent byte write control (BHE/BLE), automatic CE-controlled power-down (ISB2 = 5 mA), and SOJ-44 package. Used in real-time industrial controllers requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1021CV33-12VXI datasheet, CY7C1021CV33-12VXI pinout, CY7C1021CV33-12VXI application, or CY7C1021CV33-12VXI equivalent, key selection criteria include tAA ≤ 12 ns, dual-byte enable support, CMOS-compatible 3.3 V I/O, and industrial-grade thermal performance (ΘJA = 76.92°C/W in TSOP II).

Technical Context

The CY7C1021CV33-12VXI implements a synchronous, non-volatile-independent SRAM architecture with fully decoded 16-bit bidirectional I/O and address latching via A0–A15. Its read/write timing is governed by overlapping CE/WE/OE/BHE/BLE control signals, not clocked logic - enabling asynchronous operation with guaranteed tRC = 12 ns and tPD = 12 ns.

Power management relies on TTL- or CMOS-level CE threshold detection: when CE exceeds VIH (2.0 V) or falls below VIL (0.8 V), ISB2 drops to 5 mA at VCC = 3.3 V. Byte-select logic isolates IO1–IO8 (BLE) and IO9–IO16 (BHE), allowing partial-word writes without bus contention.

Key Specifications

Parameter Value and Actual Design Meaning
tAA 12 ns max - guarantees data valid within 12 ns of stable address, critical for cycle-accurate microcontroller interfacing.
VCC 3.3 V ±10% - compatible with modern low-voltage logic families and eliminates level-shifting in 3.3 V systems.
ICC (max) 85 mA - defines worst-case active current draw during 12 ns read/write cycles at full bus activity.
ISB2 5 mA - standby current when CE is deasserted under CMOS input conditions, enabling ultra-low-power sleep modes.
Operating Temp –40°C to +85°C - validated for industrial environments including factory automation and motor drive control cabinets.
Package 44-pin SOJ (400 mil) - surface-mount compatible with standard reflow profiles and provides mechanical robustness for vibration-prone applications.
IO Drive IOH = –4 mA / IOL = 8 mA - sufficient to directly drive 10 TTL loads or terminate 50 Ω transmission lines with series resistors.

Pinout & Package

44-pin SOJ (400 mil) package with gull-wing leads; body width 400 mil, lead pitch 0.05 inch. Pin 1 marked by notch or dot; pins arranged in two parallel rows.

Pin/Terminal Circuit Role Design Meaning
A0–A15 Address Input 16-bit address bus inputs selecting one of 65,536 memory locations; no internal latching - requires stable address before CE/WE assertion.
IO1–IO16 Bidirectional Data I/O 16-bit data bus; tri-stated when CE HIGH, OE HIGH, or BHE/BLE HIGH - enables shared bus arbitration without external buffers.
CE Chip Enable (Active LOW) Primary device select; initiates automatic power-down when HIGH, reducing ICC to ISB2 (5 mA) without external control logic.
WE Write Enable (Active LOW) Controls write initiation; must be LOW concurrently with CE LOW and either BHE or BLE LOW to store data into selected byte lanes.
BHE, BLE Byte Write Enable (Active LOW) Independent 8-bit lane control: BLE enables IO1–IO8, BHE enables IO9–IO16 - allows mixed-endian or partial-word updates without read-modify-write.
OE Output Enable (Active LOW) Enables output drivers only when CE is LOW; prevents bus contention during multi-device reads and supports daisy-chained OE timing.
VCC Power Supply Single 3.3 V supply; decoupling required at both VCC pins (pins 11 & 33) to maintain noise margin during fast switching.
VSS Ground Two dedicated ground pins (12 & 34) minimize ground bounce across high-frequency I/O transitions.

Key Features

Feature Design Value
Independent byte write control Separate BHE/BLE inputs allow simultaneous or selective update of upper/lower 8-bit data lanes - eliminates need for external byte masking logic.
Automatic CE power-down Reduces standby current to 5 mA without external circuitry when CE is deasserted - simplifies low-power system design in battery-backed or energy-constrained nodes.
Asynchronous interface No clock required; timing defined solely by CE/WE/OE setup/hold relationships - enables direct connection to legacy microcontrollers lacking SRAM clocks.
High noise immunity VIH = 2.0 V / VIL = 0.8 V at VCC = 3.3 V provides 0.5 V noise margin against EMI in industrial enclosures with relay switching or motor drives.
SOJ-44 mechanical reliability Gull-wing leads withstand thermal cycling per JEDEC JESD22-A104; qualified for >1000 cycles - suitable for field-upgradable industrial modules.

Applications

Industrial PLC Data Buffer Automotive Engine Control Unit Cache

Use Scenario: Stores real-time sensor fusion results and actuator command queues in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Asynchronous 64K × 16 scratchpad memory providing sub-15 ns read/write latency for cyclic data exchange between CPU and I/O modules.

Use Value: Eliminates wait states in ARM Cortex-M4-based PLCs operating at 120 MHz, sustaining 83 MB/s sustained bandwidth with burst-free access.

Use Scenario: Holds transient calibration tables and fault-log buffers in engine control units exposed to under-hood temperatures up to 85°C.

IC Role / Device Role / Timing Role: Industrial-temp SRAM serving as non-volatile shadow memory for flash-resident firmware, accessed during runtime parameter tuning.

Use Value: Enables zero-latency lookup of fuel-injection timing maps while maintaining <5 mA standby draw during vehicle ignition-off periods.

Medical Imaging Frame Buffer Test Equipment Pattern Memory

Use Scenario: Captures raw pixel streams from ultrasound transducer arrays prior to FPGA-based beamforming and compression.

IC Role / Device Role / Timing Role: High-reliability 1-Mbit frame buffer interfaced directly to Xilinx Artix-7 FPGA using LVCMOS33 I/O banks.

Use Value: Supports 100+ Mpixel/s throughput with tAA = 12 ns and dual-byte writes - avoids FIFO bottlenecks in portable diagnostic devices.

Use Scenario: Stores digital stimulus/response vectors in automated test equipment for semiconductor wafer probing.

IC Role / Device Role / Timing Role: Deterministic-access memory for pattern sequencers requiring precise nanosecond-aligned read/write edges.

Use Value: Guarantees 12 ns timing closure across 16-bit parallel buses driving 100 MHz ATE pin electronics with <±0.5 ns jitter.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61LV102416-12TQLI Same 64K × 16 organization, 12 ns tAA, but uses TSOP II-44; ISB2 = 15 mA (vs. 5 mA); no automotive qualification. Lacks industrial temp validation and automatic CE power-down - requires external enable sequencing for low-power modes. Select when board layout mandates TSOP II footprint and power budget allows +10 mA standby overhead.
ON Semiconductor MC10EL1648DTG ECL-level 8-bit latch, not SRAM; incompatible voltage (–4.5 V), speed class (sub-ns), and function - not a drop-in replacement. Designed for high-speed serial data capture, not memory storage - serves entirely different system layer. Reject for SRAM replacement; only consider if redesigning from latch-based to memory-based buffering architecture.

Compared with IS61LV102416-12TQLI, CY7C1021CV33-12VXI delivers 70% lower standby current and guaranteed industrial temperature operation; versus MC10EL1648DTG, it provides true random-access storage rather than edge-triggered latching - making it the sole viable option for deterministic memory-mapped I/O.

Availability

CY7C1021CV33-12VXI is available at Aetrix Electronics and suitable for industrial PLCs, automotive engine control units, medical imaging subsystems, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1021CV33-12VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and communications infrastructure markets.

The CY7C1021CV33 belongs to Cypress's legacy high-speed asynchronous SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time embedded systems where clockless interfacing and industrial temperature resilience are mandatory.

FAQ

Is CY7C1021CV33-12VXI pin-compatible with CY7C1021BV33?

Yes - the datasheet explicitly states "Pin and function compatible with CY7C1021BV33". Both share identical SOJ-44 pinout, signal definitions (A0–A15, IO1–IO16, CE, WE, OE, BHE, BLE), and electrical interface behavior. The -12VXI variant adds industrial temperature rating and tighter tAA specification (12 ns vs. 15 ns for BV33-15), but requires no PCB changes.

What is the maximum capacitive load the IO pins can drive reliably?

The IO pins are characterized for 30 pF total load (including PCB trace and receiver input capacitance) in AC testing per Figure 3(a) of the datasheet. Output rise/fall times are specified at 1 V/ns under this load. Driving >30 pF may violate tDOE (5 ns) and tHZOE (4 ns) timing margins, especially at temperature extremes.

Does CY7C1021CV33-12VXI support partial-word writes without read-modify-write cycles?

Yes - via independent BHE and BLE controls. Asserting only BLE LOW writes to IO1–IO8 while leaving IO9–IO16 unchanged; asserting only BHE LOW writes to IO9–IO16. No internal read operation occurs - data on unselected byte lanes remains undisturbed and electrically isolated.

Can VCC be ramped independently of CE for power sequencing?

No - tPOWER specifies 100 µs minimum delay from VCC reaching typical value (3.3 V) until first CE assertion. Applying CE before VCC stabilizes risks undefined outputs and potential bus contention. Power sequencing must ensure VCC is stable ≥100 µs before driving CE LOW for reliable initialization.

CY7C1021CV33-12VXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

CY7C1021CV33-12VXI FAQ

1.How can I place an order for CY7C1021CV33-12VXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1021CV33-12VXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1021CV33-12VXI reliable?

The price and inventory of CY7C1021CV33-12VXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-12VXI is usually 5 days.

3.What payment methods are accepted for CY7C1021CV33-12VXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-12VXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1021CV33-12VXI?

CY7C1021CV33-12VXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1021CV33-12VXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1021CV33-12VXI?

For technical support, including CY7C1021CV33-12VXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-12VXI requirements.

6.How does Aetrix verify that CY7C1021CV33-12VXI is sourced from the original manufacturer or authorized distributors?

All CY7C1021CV33-12VXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-12VXI meets industry standards.

7.What is the process for return or replacement of CY7C1021CV33-12VXI?

All CY7C1021CV33-12VXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-12VXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1021CV33-12VXI part is unused and in its original packaging.

Return procedure for CY7C1021CV33-12VXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1021CV33-12VXI Tags

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