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Infineon Technologies CY7C1021CV33-12VXIT
- Part No.:
- CY7C1021CV33-12VXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021CV33-12VXIT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:2,290
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Product details
Overview
CY7C1021CV33-12VXIT from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns access time, 3.3 V supply, and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/BLE, operates across –40°C to +85°C (Industrial grade), and is packaged in a 44-pin TSOP II for space-constrained embedded memory buffering.
For engineers reviewing the CY7C1021CV33-12VXIT datasheet, CY7C1021CV33-12VXIT pinout, CY7C1021CV33-12VXIT application, or CY7C1021CV33-12VXIT equivalent, this page delivers verified timing parameters, byte-enable logic behavior, industrial-temperature reliability data, and package-specific pin mapping - all critical for SRAM interface validation in real-time control and legacy bus systems.
Technical Context
The CY7C1021CV33-12VXIT implements a synchronous, non-volatile-independent 64K × 16-bit memory array with dual active-low byte enables (BHE/BLE) enabling selective 8-bit writes without full-word overhead. Its read cycle is controlled by CE/OE/WE logic states, with tAA = 12 ns and tHZOE = 6 ns at Industrial temperature.
Power management relies on automatic CE-driven transition into low-power standby (ISB2 = 5 mA max), while input/output pins enter high-impedance state during deselection (CE HIGH), OE HIGH, or write operations (WE LOW). Address decoding uses full 16-bit A0–A15 with no internal multiplexing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64K × 16-bit (1,048,576 bits), enabling 16-bit parallel data transfers without external width expansion |
| Access Time (tAA) | 12 ns maximum at VCC = 3.3 V ±10%, TA = –40°C to +85°C - defines minimum clock-to-data latency in synchronous bus interfaces |
| Supply Voltage | 3.3 V ±10% - compatible with standard LVTTL and LVCMOS 3.3 V I/O domains, not 5 V tolerant |
| Operating Current (ICC) | 85 mA maximum at fMAX = 1/tRC - sets thermal and PCB trace design constraints for sustained burst reads |
| Standby Current (ISB2) | 5 mA maximum under CMOS-input power-down - enables low-quiescent operation in sleep-mode microcontroller systems |
| Input/Output Capacitance | 8 pF typical - limits trace length and fanout in high-speed address/data buses without signal integrity degradation |
| Temperature Range | –40°C to +85°C (Industrial) - qualified for use in motor drives, industrial PLCs, and telecom line cards |
Pinout & Package
Package: 44-pin TSOP II (0.400″ wide), JEDEC MO-141AC compliant, lead-free (Pb-free) variant per RoHS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Input | 16-bit unidirectional address bus; fully decoded to select one of 65,536 memory locations |
| IO1–IO8 / IO9–IO16 | Bidirectional Data I/O | Two independent 8-bit data ports; IO1–IO8 controlled by BLE, IO9–IO16 by BHE - enables partial-word writes |
| CE | Chip Enable (Active LOW) | Primary device selection signal; asserts memory enable and initiates automatic power-down when deasserted |
| WE | Write Enable (Active LOW) | Controls direction of IO pins; LOW enables write, HIGH enables read (with OE LOW) |
| OE | Output Enable (Active LOW) | Enables output drivers only during read cycles; HIGH forces IO pins to high-impedance state |
| BLE / BHE | Byte Low/High Enable (Active LOW) | Independent gating of lower/upper 8-bit data paths - eliminates need for external byte-masking logic |
| VCC | Power Supply | 3.3 V ±10% main supply; two dedicated pins (pins 11 & 33) reduce IR drop in high-current bursts |
| VSS | Ground | System ground reference; two dedicated pins (pins 12 & 34) improve noise immunity and return path integrity |
Key Features
| Feature | Design Value |
|---|---|
| Automatic CE Power-Down | Reduces ICC to 5 mA (ISB2) when CE is HIGH - eliminates need for external power-gating circuitry in battery-backed systems |
| Independent Byte Write Control | BLE/BHE allow simultaneous or separate 8-bit writes to upper/lower data bytes - preserves data integrity during partial updates |
| High-Z Output Control | tHZOE = 6 ns and tHZCE = 6 ns ensure fast, clean bus release - prevents contention in shared-data-bus architectures |
| Industrial Temperature Qualification | Rated for –40°C to +85°C operation with full parameter guarantees - suitable for deployment in uncontrolled industrial enclosures |
| Low Input/Output Capacitance | 8 pF CIN/COUT minimizes loading on 16-bit address/data buses - supports reliable 83 MHz bus operation without termination |
Applications
| Industrial PLC Memory Buffer | Automotive Engine Control Unit (ECU) |
|---|---|
|
Use Scenario: Storing real-time sensor fusion results and actuator command history in programmable logic controllers with ISA or LPC bus interfaces. IC Role / Device Role / Timing Role: Non-volatile-independent SRAM buffer providing deterministic 12 ns read/write latency for cyclic data logging and register shadowing. Use Value: Enables deterministic 100 µs tPOWER startup and zero-cycle wait-state operation with Intel 80C188EB or similar controllers. |
Use Scenario: Holding calibration tables and transient diagnostic logs in engine control modules where EMI resilience and thermal stability are critical. IC Role / Device Role / Timing Role: Industrial-grade SRAM serving as scratchpad memory for MPC5604B or SPC56EL60, interfaced via local bus with byte-select capability. Use Value: BHE/BLE support allows efficient 8-bit table updates without corrupting adjacent calibration words during runtime reprogramming. |
| Legacy Telecom Line Card Cache | Medical Imaging Frame Buffer |
|
Use Scenario: Acting as packet header cache and protocol translation scratchpad in T1/E1 framing ICs such as DS2155 or LIU-based designs. IC Role / Device Role / Timing Role: High-reliability parallel SRAM providing 16-bit data path to TI TMS320C64x+ DSPs with strict tAA ≤ 12 ns requirement. Use Value: Dual VCC/VSS pins and 8 pF capacitance maintain signal integrity across 12-inch backplane traces operating at 66 MHz. |
Use Scenario: Temporary storage of uncompressed grayscale image tiles (e.g., 512×512 @ 16 bpp) in portable ultrasound or X-ray digitizer subsystems. IC Role / Device Role / Timing Role: Burst-access SRAM supporting DMA transfers from FPGA-based image processors with precise tDOE = 6 ns output enable timing. Use Value: Automatic CE power-down reduces average power to <100 mW during idle scan intervals - extends battery life in handheld devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-12TIN | 1-Mbit (128K × 8), 12 ns, 3.3 V, 44-pin TSOP II - narrower 8-bit bus, no BHE/BLE, higher ISB2 (10 mA) | Lacks byte-write granularity; requires external logic for 16-bit alignment; less suitable for partial-word update scenarios | Select when system uses 8-bit data paths or cost sensitivity outweighs byte-control flexibility |
| IS61LV102416-12TQLI | 1-Mbit (64K × 16), 12 ns, 3.3 V, 44-pin TSOP II - identical organization and timing, but no automotive qualification | Industrial temp only (–40°C to +85°C); same pinout and function, but lacks AEC-Q100 documentation for automotive ECUs | Select for industrial-only deployments where Cypress qualification documentation is not required |
Compared with AS6C1008-12TIN and IS61LV102416-12TQLI, the CY7C1021CV33-12VXIT uniquely combines byte-select capability, automotive-A qualification, and dual VCC/VSS routing - making it optimal for safety-critical partial-write applications where bus efficiency and thermal margin are jointly constrained.
Availability
CY7C1021CV33-12VXIT is available at Aetrix Electronics and suitable for industrial PLCs, automotive engine control units, legacy telecom line cards, and medical imaging subsystems requiring stable component supply, long-lifecycle support, and guaranteed industrial-temperature performance.
Supply support for CY7C1021CV33-12VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.
The CY7C1021CV33 belongs to Cypress's high-speed parallel SRAM product line, designed specifically for deterministic, low-latency memory interfacing in legacy and real-time embedded systems using 16-bit parallel buses.
FAQ
Is CY7C1021CV33-12VXIT pin-compatible with CY7C1021BV33?
Yes - the CY7C1021CV33-12VXIT is pin- and function-compatible with CY7C1021BV33, sharing identical 44-pin TSOP II pinout, address/data mapping, and control signal definitions. The 'V' suffix denotes enhanced voltage tolerance and improved power-down behavior, but no layout changes are needed for drop-in replacement in existing designs.
What is the maximum clock frequency supported for continuous read cycles?
The maximum continuous read frequency is 83.3 MHz, derived from tRC = 12 ns (1/12 ns). This assumes valid CE/OE setup/hold timing and stable address transitions; actual achievable rate depends on board-level signal integrity, especially for tHZOE = 6 ns and tLZOE = 0 ns transitions on the IO bus.
Does CY7C1021CV33-12VXIT support 5 V tolerant inputs?
No - all inputs (A0–A15, CE, WE, OE, BHE, BLE) are strictly 3.3 V CMOS-compatible with VIH = 2.0 V min and VIL = 0.8 V max. Applying 5 V signals will exceed absolute maximum ratings and may cause permanent damage; level-shifting is required for mixed-voltage systems.
How does automatic power-down behave when CE is pulsed briefly during operation?
When CE transitions HIGH for ≥100 µs (tPOWER), the device enters automatic power-down mode with ISB2 ≤ 5 mA. If CE returns LOW before tPOWER elapses, the device resumes normal operation without delay - no reset or initialization sequence is required, preserving data integrity across brief deselect windows.
CY7C1021CV33-12VXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1021CV33-12VXIT FAQ
1.How can I place an order for CY7C1021CV33-12VXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021CV33-12VXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021CV33-12VXIT reliable?
The price and inventory of CY7C1021CV33-12VXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-12VXIT is usually 5 days.
3.What payment methods are accepted for CY7C1021CV33-12VXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-12VXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021CV33-12VXIT?
CY7C1021CV33-12VXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021CV33-12VXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021CV33-12VXIT?
For technical support, including CY7C1021CV33-12VXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-12VXIT requirements.
6.How does Aetrix verify that CY7C1021CV33-12VXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1021CV33-12VXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-12VXIT meets industry standards.
7.What is the process for return or replacement of CY7C1021CV33-12VXIT?
All CY7C1021CV33-12VXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-12VXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021CV33-12VXIT part is unused and in its original packaging.
Return procedure for CY7C1021CV33-12VXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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