Infineon Technologies CY7C1021CV33-12ZSXE

Overview

CY7C1021CV33-12ZSXE from Infineon Technologies (formerly Cypress) is an automotive-grade 1-Mbit (64 K × 16) CMOS static RAM with 12 ns maximum access time, 3.3 V supply, and dual-byte write control via BHE/BLE. It operates across –40 °C to +125 °C (Automotive-E grade), supports automatic CE power-down (≤10 mA standby), and is packaged in a 44-pin TSOP II. It serves as main data buffer in engine control units requiring deterministic, non-volatile-access memory.

For engineers reviewing the CY7C1021CV33-12ZSXE datasheet, CY7C1021CV33-12ZSXE pinout, CY7C1021CV33-12ZSXE application, or CY7C1021CV33-12ZSXE equivalent, key selection criteria include tAA ≤12 ns, ISB2 ≤10 mA at 125 °C, byte-selectable I/O1–I/O16 operation, and AEC-Q100 compliance for under-hood embedded systems.

Technical Context

This SRAM implements a synchronous, address-decoded 64K × 16-bit array with independent high- and low-byte enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its TTL/CMOS-compatible inputs accept VIH ≥2.0 V and VIL ≤0.8 V, and output drivers deliver VOH ≥2.4 V at –4.0 mA and VOL ≤0.4 V at 8.0 mA.

The device uses automatic CE-controlled power-down mode: when CE is HIGH, ICC drops to ≤10 mA (Automotive-E), and all I/Os enter high-impedance state regardless of OE/BHE/BLE status. Timing is fully specified for 3.3 V ±10% supply across –40 °C to +125 °C, with tRC = 12 ns and tPD = 12 ns defining worst-case cycle and power-down latency.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package, Type II (TSOP II), 400 mil width, lead-free (Pb-free) finish, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV1024-12MLI and AS6C1008-12TIN, CY7C1021CV33-12ZSXE uniquely delivers AEC-Q100 Grade 1 qualification, true 16-bit byte-selectable I/O, and guaranteed 12 ns performance at +125 °C - making it the only drop-in solution for safety-critical powertrain memory buffers.

Availability

CY7C1021CV33-12ZSXE is available at Aetrix Electronics and suitable for engine control units, transmission control modules, and ADAS pre-trigger buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1021CV33-12ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions for mission-critical applications.

This device belongs to Infineon's automotive SRAM product line, engineered specifically for AEC-Q100-compliant, high-reliability data buffering in powertrain and chassis control systems where deterministic timing and thermal robustness are non-negotiable.

FAQ

What is the maximum operating current for CY7C1021CV33-12ZSXE at +125 °C?

The maximum operating current (ICC) is 90 mA at +125 °C under full-speed operation (f = 1/tRC), as specified in the Electrical Characteristics table on page 5 of Rev. *Q datasheet. This value assumes VCC = 3.63 V, IOUT = 0 mA, and worst-case AC loading.

Does CY7C1021CV33-12ZSXE support true 16-bit bidirectional data transfer without external logic?

Yes. The device features native 16-bit I/O1–I/O16 pins with independent BHE and BLE controls, enabling full 16-bit reads/writes or selective 8-bit operations without glue logic. Pin definitions confirm bidirectional functionality per I/O pin, and the Truth Table on page 11 validates all read/write modes.

Is the 44-pin TSOP II package (ZSXE) RoHS-compliant and lead-free?

Yes. The ZSXE suffix explicitly denotes a lead-free (Pb-free), RoHS-compliant 44-pin TSOP II package, as confirmed in the Ordering Information section (page 12) and Package Diagrams (page 13) of the datasheet. Thermal resistance values (θJA = 76.92 °C/W) are measured on this Pb-free variant.

How does automatic power-down behave when CE is HIGH but OE and WE are LOW?

When CE is HIGH, the device enters automatic power-down regardless of OE or WE state: ICC drops to ≤10 mA (ISB2), all I/Os go high-impedance, and internal array biasing is reduced. This behavior is explicitly defined in the Functional Description (page 1) and Electrical Characteristics (page 5) sections of the datasheet.