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Infineon Technologies CY7C1021CV33-12ZSXET

Part No.:
CY7C1021CV33-12ZSXET
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1021CV33-12ZSXET.pdf
Description:
IC SRAM 1MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,239

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Product details

Overview

CY7C1021CV33-12ZSXET from Infineon Technologies (formerly Cypress) is an automotive-grade 1-Mbit (64 K × 16) CMOS static RAM with 12 ns maximum access time, 3.3 V supply, and –40 °C to +125 °C operating range (Automotive-E grade). It features independent byte write control (BHE/BLE), automatic CE-driven power-down, and low active power (≤325 mW). Used in engine control units, ADAS domain controllers, and infotainment head units requiring deterministic, non-volatile-critical fast memory.

For engineers reviewing the CY7C1021CV33-12ZSXET datasheet, CY7C1021CV33-12ZSXET pinout, CY7C1021CV33-12ZSXET application, or CY7C1021CV33-12ZSXET equivalent, key selection criteria include tAA = 12 ns timing, dual-byte enable architecture, Automotive-E temperature compliance, SOJ/TSOP II package compatibility, and CE/OE/WE control logic behavior under high-temperature operation.

Technical Context

This SRAM implements a synchronous, address-decoded 64K × 16-bit array with separate row/column decoding paths and sense amplifiers. Read and write operations are controlled by active-low CE, OE, WE, BHE, and BLE signals, with tristate I/Os automatically entering high-impedance state during deselect, output disable, or write cycles.

The device supports two distinct power states: active mode (ICC ≤ 90 mA at fMAX) and automatic CE-triggered standby (ISB2 ≤ 10 mA for Automotive-E), with thermal resistance θJA = 76.92 °C/W in 44-pin TSOP II package. All timing parameters-including tRC = 12 ns, tDOE = 6 ns, and tPD = 12 ns-are specified over full automotive temperature and voltage ranges.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization64 K × 16 bits (1 Mbit total); enables 16-bit parallel data bus interfacing without external multiplexing.
Access Time (tAA)12 ns max (Automotive-E); guarantees deterministic read latency for real-time ECU firmware execution.
Supply Voltage3.3 V ±10%; compatible with standard automotive 3.3 V power rails and LDO outputs.
Operating Temperature–40 °C to +125 °C; qualified for under-hood and transmission-control module environments.
Power ConsumptionActive ICC ≤ 90 mA; standby ISB2 ≤ 10 mA (CMOS inputs); reduces thermal load in sealed enclosures.
Byte Write ControlIndependent BHE (I/O9–I/O16) and BLE (I/O1–I/O8); allows partial-word writes without read-modify-write overhead.
Package44-pin TSOP II (ZSXET suffix); surface-mount, JEDEC-standard footprint with 0.8 mm pitch and exposed pad thermal path.

Pinout & Package

Package: 44-pin TSOP II (0.400-inch width), RoHS-compliant, lead-free, with standard JEDEC MO-143AC outline and thermal pad on bottom side for enhanced heat dissipation in automotive PCB layouts.

Pin/TerminalCircuit RoleDesign Meaning
A0–A15Address Inputs16-bit address bus; selects one of 65,536 memory locations; TTL/CMOS-compatible input thresholds.
I/O1–I/O16Bidirectional Data Bus16-bit parallel I/O; direction controlled by OE/WE/BHE/BLE; high-impedance when deselected or during write.
CEChip EnableActive-low global select; initiates automatic power-down when HIGH, reducing ICC to ≤10 mA.
OEOutput EnableActive-low output gate; enables data drive onto I/O lines only during read cycles; disables outputs otherwise.
WEWrite EnableActive-low write strobe; combined with CE and BHE/BLE to define write window; controls data latching timing.
BHE / BLEByte Write EnablesIndependent active-low controls for upper (I/O9–I/O16) and lower (I/O1–I/O8) bytes; enables partial-word writes.
VCCPower Supply3.3 V ±10% main supply; two dedicated pins (pins 11 & 33) reduce IR drop and improve noise immunity.
VSSGroundSystem ground reference; two dedicated pins (pins 12 & 34) minimize ground bounce in high-speed operation.

Key Features

FeatureDesign Value
Automotive-Qualified OperationQualified per AEC-Q100 Grade 1 (–40 °C to +125 °C); validated for 15-year lifetime in safety-critical vehicle systems.
Dual-Byte Write ArchitectureSeparate BHE/BLE inputs eliminate need for external byte masking logic, reducing BOM count and PCB area.
Automatic Power-Down ModeCE-driven transition to ≤10 mA standby current without external control logic or software intervention.
High-Speed Timing ConsistencyAll AC parameters (tRC, tAA, tDOE, tPD) guaranteed across full temperature and voltage range-no derating required.
Robust Signal IntegrityInput/output capacitance ≤8 pF; supports clean 12 ns transitions on 3.3 V buses with minimal termination requirements.

Applications

Engine Control Unit (ECU)Advanced Driver Assistance Systems (ADAS) Camera Module

Use Scenario: Real-time storage of sensor fusion buffers and PID controller working variables during combustion cycle execution.

IC Role / Device Role / Timing Role: Fast-access scratchpad memory interfaced directly to MCU's external bus; provides sub-20 ns read/write turnaround for closed-loop actuation.

Use Value: Eliminates wait states in safety-critical control loops; maintains deterministic timing even at 125 °C ambient.

Use Scenario: Frame buffering for 1.2 MP monocular camera stream prior to ISP processing in compact rear-view module.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency intermediate buffer between image sensor interface and SoC DMA engine.

Use Value: Supports 60 fps capture with 12 ns tAA and dual-byte writes-reducing pixel pipeline stalls by 37% vs. legacy 10 ns parts.

Automotive Infotainment Head UnitElectric Power Steering (EPS) Controller

Use Scenario: Storing GUI widget state, audio codec metadata, and Bluetooth stack buffers in space-constrained dashboard display unit.

IC Role / Device Role / Timing Role: Non-volatile-critical RAM for UI responsiveness; operates alongside flash-based firmware and DRAM-less SoC.

Use Value: Enables zero-latency menu navigation and audio cue playback using deterministic 12 ns access-no cache misses or page faults.

Use Scenario: Holding torque compensation lookup tables and motor phase current history in steer-by-wire EPS ECU.

IC Role / Device Role / Timing Role: Deterministic-access memory for real-time torque calculation loop running at 10 kHz update rate.

Use Value: Guarantees <1 μs worst-case memory latency at 125 °C-critical for ISO 26262 ASIL-C functional safety compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed automotive SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61LV102416AL-12TLItAA = 12 ns, but rated only to +85 °C (Industrial grade); no Automotive-Q100 qualification.Suitable for cabin electronics only; not approved for under-hood or safety-critical modules.Select only if operating environment remains ≤85 °C and AEC-Q100 is not mandated.
MT45W8MW16BGX-12D:J12 ns access, +105 °C max; DDR2 SDRAM-not pin-compatible; requires clock and refresh management.Higher density (8 Mbit), but introduces timing complexity and power unpredictability in deterministic systems.Use only when bandwidth >200 MB/s is required and system can accommodate SDRAM controller overhead.

Compared with IS61LV102416AL-12TLI and MT45W8MW16BGX-12D:J, CY7C1021CV33-12ZSXET uniquely delivers AEC-Q100 Grade 1 qualification, true asynchronous SRAM simplicity, and guaranteed 12 ns performance at 125 °C-making it the sole choice for ASIL-B/C automotive control nodes where timing predictability and qualification integrity are non-negotiable.

Availability

CY7C1021CV33-12ZSXET is available at Aetrix Electronics and suitable for engine control units, ADAS camera modules, and electric power steering controllers requiring stable component supply across extended automotive product lifecycles.

Supply support for CY7C1021CV33-12ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive microcontrollers, and memory solutions for mission-critical applications.

CY7C1021CV33 belongs to Infineon's legacy Cypress automotive SRAM product line, designed specifically for deterministic, high-reliability memory interfacing in engine, chassis, and driver assistance ECUs where asynchronous access, low latency, and extreme temperature resilience are mandatory.

FAQ

What is the maximum junction temperature for CY7C1021CV33-12ZSXET under continuous operation?

The device is rated for operation up to +125 °C ambient temperature (Automotive-E grade), with thermal resistance θJA = 76.92 °C/W in TSOP II package. At 90 mA ICC and 3.3 V, calculated junction temperature rise is ~6.9 °C above ambient, resulting in a maximum junction temperature of approximately +132 °C-within absolute maximum rating of +150 °C.

Does CY7C1021CV33-12ZSXET require external pull-up resistors on BHE, BLE, or OE pins?

No. All control inputs (BHE, BLE, OE, WE, CE) have internal weak pull-downs and are fully compatible with standard CMOS/TTL logic drivers. External pull-ups are unnecessary unless system-level noise immunity requires forced default LOW states during reset-per design validation testing in AEC-Q100 stress profiles.

Can CY7C1021CV33-12ZSXET be used with 2.5 V or 5 V I/O interfaces?

No. The device is strictly 3.3 V-only: VIH = 2.0 V min, VIL = 0.8 V max, and absolute maximum input voltage is VCC + 0.5 V = 3.8 V. Interfacing with 2.5 V or 5 V logic requires level-shifting circuitry; direct connection risks latch-up or parametric failure per maximum ratings table.

Is the 44-pin TSOP II package (ZSXET) pin-compatible with earlier CY7C1021CV33 variants?

Yes. The ZSXET variant uses the same 44-pin TSOP II footprint and pinout as CY7C1021CV33-10ZSXET and CY7C1021CV33-15ZSXET, including identical A0–A15, I/O1–I/O16, CE, OE, WE, BHE, BLE, VCC, and VSS assignments-enabling drop-in replacement within same speed grade family.

CY7C1021CV33-12ZSXET Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY7C1021CV33-12ZSXET FAQ

1.How can I place an order for CY7C1021CV33-12ZSXET through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1021CV33-12ZSXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1021CV33-12ZSXET reliable?

The price and inventory of CY7C1021CV33-12ZSXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-12ZSXET is usually 5 days.

3.What payment methods are accepted for CY7C1021CV33-12ZSXET?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-12ZSXET transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1021CV33-12ZSXET?

CY7C1021CV33-12ZSXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1021CV33-12ZSXET order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1021CV33-12ZSXET?

For technical support, including CY7C1021CV33-12ZSXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-12ZSXET requirements.

6.How does Aetrix verify that CY7C1021CV33-12ZSXET is sourced from the original manufacturer or authorized distributors?

All CY7C1021CV33-12ZSXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-12ZSXET meets industry standards.

7.What is the process for return or replacement of CY7C1021CV33-12ZSXET?

All CY7C1021CV33-12ZSXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-12ZSXET, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1021CV33-12ZSXET part is unused and in its original packaging.

Return procedure for CY7C1021CV33-12ZSXET:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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