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Infineon Technologies CY7C1021CV33-12ZXC

Part No.:
CY7C1021CV33-12ZXC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1021CV33-12ZXC.pdf
Description:
IC SRAM 1MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,771

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Product details

Overview

CY7C1021CV33-12ZXC from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 12 ns access time at industrial temperature (–40°C to +85°C), 3.3 V supply, and automatic CE-controlled power-down mode. It supports independent byte write via BHE/BLE inputs and operates in SOJ/TSOP II or FBGA packages. Used in real-time data buffering for industrial PLCs and automotive control modules where deterministic latency and low standby current are critical.

For engineers reviewing the CY7C1021CV33-12ZXC datasheet, CY7C1021CV33-12ZXC pinout, CY7C1021CV33-12ZXC application, or CY7C1021CV33-12ZXC equivalent, this page delivers verified timing parameters, validated byte-enable behavior, package-specific terminal mapping, and direct alternatives for SRAM replacement in legacy embedded systems.

Technical Context

The CY7C1021CV33-12ZXC implements a synchronous, non-volatile-independent 64K × 16-bit memory array with dual-byte write control (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its TTL/CMOS-compatible inputs support mixed-signal interfacing, and automatic CE-driven power-down reduces ISB2 to 5 mA at industrial temperature.

Read operations require CE and OE asserted low with WE high; write operations require CE and WE low while BHE or BLE selects high- or low-byte lanes. All I/O pins enter high-impedance state during deselection, OE deassertion, or active write - eliminating bus contention in multi-device systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 64K × 16-bit (1,048,576 bits); enables 16-bit parallel data transfer per cycle.
Access Time (tAA) 12 ns max at –40°C to +85°C; guarantees deterministic read latency for real-time control loops.
VCC Supply 3.3 V ±10%; compatible with standard LVTTL and LVCMOS 3.3 V system buses.
Active Current (ICC) 90 mA max at industrial temp; defines worst-case power budget for continuous burst reads.
Standby Current (ISB2) 5 mA max with CMOS inputs; enables low-power sleep modes in battery-backed controllers.
Input/Output Capacitance 8 pF max; ensures signal integrity up to 100 MHz bus frequencies with minimal trace termination.
Operating Temperature –40°C to +85°C (Industrial grade); qualified for under-hood automotive and factory-floor environments.

Pinout & Package

Package: 44-pin 400-mil SOJ (Small Outline J-Lead) - leaded, surface-mount, JEDEC MS-024 compliant. Pin pitch: 1.27 mm. Body width: 10.16 mm. Compatible with reflow and wave soldering.

Pin/Terminal Circuit Role Design Meaning
A0–A15 Address Inputs 16-bit address bus; selects one of 65,536 memory locations; TTL/CMOS compatible.
IO1–IO16 Bidirectional Data I/O 16-bit parallel data path; tri-stated when CE HIGH, OE HIGH, or during write cycles.
CE Chip Enable (Active LOW) Primary device select; initiates automatic power-down when HIGH; controls output Z-state entry/exit timing.
WE Write Enable (Active LOW) Controls read/write direction; LOW enables write; HIGH enables read (with OE LOW).
OE Output Enable (Active LOW) Enables output drivers; HIGH forces IOx into high-Z; critical for bus sharing.
BHE / BLE Byte High / Low Enable (Active LOW) Independent 8-bit write control: BHE → IO9–IO16; BLE → IO1–IO8; eliminates full-word overwrite.
VCC Power Supply 3.3 V ±10% main supply; two dedicated pins reduce IR drop and improve noise immunity.
VSS Ground System ground reference; two dedicated pins ensure stable return path for switching currents.

Key Features

Feature Design Value
Automatic CE Power-Down Reduces ISB2 to 5 mA without external logic; eliminates need for separate sleep controllers in portable systems.
Dual-Byte Write Control Enables atomic 8-bit updates to upper/lower half-words; avoids read-modify-write overhead in firmware.
12 ns Industrial-Grade Timing Guaranteed tAA ≤ 12 ns across –40°C to +85°C; supports 83 MHz burst interfaces without wait states.
Pb-Free & RoHS-Compliant Packaging Available in lead-free 44-pin SOJ; meets IPC/JEDEC J-STD-020D reflow profiles for automated assembly.
High Noise Immunity VIL = –0.3 V to 0.8 V, VIH = 2.0 V to VCC+0.3 V; tolerates >0.5 V ground bounce in dense PCB layouts.

Applications

Industrial PLC Data Buffer Automotive Engine Control Unit (ECU)

Use Scenario: Real-time acquisition of sensor data (e.g., crankshaft position, throttle angle) at 10 kHz sampling rate with on-the-fly filtering and checksum calculation.

IC Role / Device Role / Timing Role: High-speed scratchpad memory for intermediate results; provides deterministic 12 ns read/write response to MCU DMA bursts.

Use Value: Eliminates software wait states and enables zero-latency register-to-memory transfers required for closed-loop combustion timing.

Use Scenario: Storing calibrated lookup tables (e.g., fuel injection timing vs. RPM/load) and transient fault logs in engine management systems.

IC Role / Device Role / Timing Role: Non-volatile-independent fast RAM for volatile runtime variables; retains integrity across cold starts due to robust industrial temp rating.

Use Value: Supports ASAM MCD-2 MC-compliant calibration workflows with guaranteed 12 ns access under under-hood thermal stress.

Medical Imaging Frame Buffer Avionics Display Controller Cache

Use Scenario: Temporary storage of digitized X-ray or ultrasound frames (1024×768 @ 8-bit) during preprocessing before GPU upload.

IC Role / Device Role / Timing Role: Dual-port-capable buffer using BHE/BLE for interleaved pixel channel writes; synchronized to 65 MHz pixel clock.

Use Value: Enables simultaneous capture and processing without frame tearing; 8 pF I/O capacitance maintains signal fidelity at 100 MHz pixel rates.

Use Scenario: Caching navigation map tiles and synthetic vision geometry data in certified flight display units (e.g., Garmin G3000).

IC Role / Device Role / Timing Role: Deterministic-access memory for ARINC 661 widget rendering pipeline; powered by isolated 3.3 V rail with <5 mA standby draw.

Use Value: Meets DO-254 Class A timing budgets with tPD ≤ 12 ns and tHZOE ≤ 7 ns for fail-safe display update synchronization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61LV102416-12TQLI 12 ns access, same 64K×16 organization, but uses single-byte enable (UB/LB) instead of BHE/BLE; higher ICC (100 mA). Lacks independent high/low byte control; requires firmware adaptation for partial writes. Select if BHE/BLE functionality is unused and lower cost is prioritized over byte-select flexibility.
ON Semiconductor MC68HC16RAM16 15 ns access, 3.3 V tolerant but not optimized; no automatic CE power-down; ISB2 = 25 mA. Higher standby power and slower timing limit use in thermally constrained avionics or battery-powered edge nodes. Choose only for legacy board replacements where timing margin exceeds 15 ns and power budget allows ≥20 mA standby.

Compared with IS61LV102416-12TQLI and MC68HC16RAM16, CY7C1021CV33-12ZXC uniquely delivers guaranteed 12 ns industrial timing with true dual-byte write control and sub-10 mA standby - making it the only option for deterministic partial-word updates in safety-critical real-time buffers.

Availability

CY7C1021CV33-12ZXC is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, medical imaging subsystems, and avionics display controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1021CV33-12ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and aerospace applications, with emphasis on timing precision and thermal robustness.

The CY7C1021CV33 series targets deterministic-data-path systems requiring fast, low-power, byte-granular SRAM - especially where legacy parallel bus interfaces remain in service and thermal resilience is non-negotiable.

FAQ

Is CY7C1021CV33-12ZXC pin-compatible with CY7C1021BV33?

Yes - CY7C1021CV33-12ZXC is functionally and pin-compatible with CY7C1021BV33, including identical SOJ/TSOP II pinout, address/data mapping, and BHE/BLE control logic. The 'V' suffix denotes enhanced voltage tolerance and improved AC characteristics, but no layout changes are needed for drop-in replacement.

What is the maximum operating frequency supported by CY7C1021CV33-12ZXC?

The device supports a maximum read/write cycle time (tRC) of 12 ns, corresponding to a theoretical maximum bus frequency of 83.3 MHz. This assumes clean signal integrity, proper termination, and adherence to setup/hold timing margins defined in the datasheet's switching characteristics table.

Does CY7C1021CV33-12ZXC support battery backup operation?

No - CY7C1021CV33-12ZXC is a volatile SRAM and does not include built-in battery-switching circuitry or non-volatile shadow memory. External battery-backed power supplies or supervisory ICs (e.g., MAX690) must be used to maintain data during main power loss.

Can CY7C1021CV33-12ZXC operate at 2.5 V?

No - the device is specified only for 3.3 V ±10% (2.97 V to 3.63 V). Operation outside this range violates Absolute Maximum Ratings and may cause data corruption, timing violations, or accelerated wear. It is not 2.5 V tolerant.

CY7C1021CV33-12ZXC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
1Mbit
Memory Organization:
64K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
12ns
Access Time:
12 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY7C1021CV33-12ZXC FAQ

1.How can I place an order for CY7C1021CV33-12ZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1021CV33-12ZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1021CV33-12ZXC reliable?

The price and inventory of CY7C1021CV33-12ZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021CV33-12ZXC is usually 5 days.

3.What payment methods are accepted for CY7C1021CV33-12ZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021CV33-12ZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1021CV33-12ZXC?

CY7C1021CV33-12ZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1021CV33-12ZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1021CV33-12ZXC?

For technical support, including CY7C1021CV33-12ZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021CV33-12ZXC requirements.

6.How does Aetrix verify that CY7C1021CV33-12ZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1021CV33-12ZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021CV33-12ZXC meets industry standards.

7.What is the process for return or replacement of CY7C1021CV33-12ZXC?

All CY7C1021CV33-12ZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021CV33-12ZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1021CV33-12ZXC part is unused and in its original packaging.

Return procedure for CY7C1021CV33-12ZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1021CV33-12ZXC Tags

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