Infineon Technologies CY7C1021CV33-8ZXC

Overview

CY7C1021CV33-8ZXC from Cypress Semiconductor is a 1-Mbit (64K × 16) high-speed CMOS static RAM with 8 ns access time, 3.3 V supply, and automatic CE-controlled power-down mode. It supports independent byte write via BHE/BLE inputs, operates across industrial temperature range (–40°C to +85°C), and is packaged in 44-pin SOJ. Used in real-time data buffering for industrial PLCs and network packet processors.

For engineers reviewing the CY7C1021CV33-8ZXC datasheet, CY7C1021CV33-8ZXC pinout, CY7C1021CV33-8ZXC application, or CY7C1021CV33-8ZXC equivalent, key selection criteria include tAA ≤ 8 ns, dual-byte enable control, CMOS-compatible 3.3 V I/O, low active power (≤325 mW), and industrial-grade thermal performance (ΘJA = 65.06°C/W in SOJ).

Technical Context

The CY7C1021CV33-8ZXC implements a synchronous, non-volatile-independent SRAM core with full address decoding (A0–A15) and bidirectional 16-bit I/O (IO1–IO16). Its read/write control logic requires precise timing coordination between CE, WE, OE, BHE, and BLE - all active-low - enabling selective byte writes and high-impedance tri-state outputs during deselection.

It features two distinct standby modes: ISB1 (TTL-input CE power-down, 15 mA max) and ISB2 (CMOS-input CE power-down, 5 mA max), both triggered by CE HIGH. The device uses standard CMOS process technology with input/output voltage thresholds aligned to 3.3 V logic (VIH ≥ 2.0 V, VOL ≤ 0.4 V), ensuring compatibility with contemporary microcontrollers and FPGAs.

Key Specifications

Pinout & Package

Package: 44-pin 400-mil SOJ (Small Outline J-Lead), lead-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV102416AL-8ML and MC10216V8, CY7C1021CV33-8ZXC uniquely delivers byte-selectable writes and 5 mA CMOS standby current in a single 44-pin SOJ package - essential for thermally constrained, high-throughput embedded buffers.

Availability

CY7C1021CV33-8ZXC is available at Aetrix Electronics and suitable for industrial PLCs, network packet processors, FPGA configuration systems, and medical imaging subsystems requiring stable component supply and long-lifecycle support.

Supply support for CY7C1021CV33-8ZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY7C1021CV33 belongs to Cypress's legacy parallel SRAM product line, engineered specifically for deterministic, low-latency data buffering in real-time control and signal processing systems.

FAQ

What is the maximum operating frequency supported by CY7C1021CV33-8ZXC?

The device does not operate on a clock signal; its speed is defined by access timing parameters. With tAA = 8 ns and tRC = 8 ns, it supports effective burst transfer rates up to 125 MHz when interfaced with synchronous controllers that meet setup/hold requirements. No internal clock circuitry is present - timing is purely asynchronous and governed by CE/OE/WE edge relationships.

Can CY7C1021CV33-8ZXC be used with 5 V logic systems?

No - it is strictly a 3.3 V core and I/O device. Input voltage limits are VIH ≤ VCC + 0.3 V and VIL ≥ –0.3 V, meaning absolute max input is 3.6 V. Direct connection to 5 V buses will violate Absolute Maximum Ratings and cause permanent damage. Level-shifting circuitry is mandatory for interoperability with 5 V systems.

Does CY7C1021CV33-8ZXC require an external refresh circuit?

No - it is a static RAM (SRAM), not DRAM. Data retention is indefinite as long as VCC is maintained within specification and ambient temperature remains within rated range. No refresh cycles, timers, or external support circuitry are needed, simplifying system design and reducing firmware overhead.

How is power-down initiated and verified in CY7C1021CV33-8ZXC?

Power-down is automatically activated when CE is driven HIGH while VCC remains stable. Current drops to ISB2 = 5 mA (max) under CMOS-input conditions. Verification is done by measuring ICC with CE = VCC – 0.3 V or higher, WE = OE = BHE = BLE = VCC, and no address transitions - confirmed in Electrical Characteristics Table on page 5 of Rev. *H datasheet.