My Inquiry
My Account
Infineon Technologies CY7C1021DV33-10BVXI
- Part No.:
- CY7C1021DV33-10BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1021DV33-10BVXI.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:180
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1021DV33-10BVXI from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, industrial/automotive-A temperature range (–40 °C to +85 °C), and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/BLE, operates with 60 mA active current and 3 mA CMOS standby current, and is used in real-time control buffers, legacy bus interface memory expansion, and FPGA configuration storage.
For engineers reviewing the CY7C1021DV33-10BVXI datasheet, CY7C1021DV33-10BVXI pinout, CY7C1021DV33-10BVXI application, or CY7C1021DV33-10BVXI equivalent, key selection criteria include tAA ≤ 10 ns, ISB2 = 3 mA, dual-byte enable support, VCC = 3.3 V ±0.3 V, and Pb-free 48-ball VFBGA (BV) package compatibility with legacy SOJ/TSOP II footprints.
Technical Context
The CY7C1021DV33-10BVXI implements a synchronous, non-volatile-retentive SRAM array organized as 65,536 × 16 bits with fully decoded address logic and bidirectional I/Os. Its read/write control relies on three independent enables: CE (chip-level selection), OE (output gating), and WE (write strobe), with separate BHE/BLE for upper/lower byte masking.
Power management is handled through automatic CE-driven transition into low-power ISB2 mode (3 mA) when deselected, while retaining data at 2.0 V. Timing is specified under strict AC test conditions: 3 ns signal edge rate, 1.5 V timing reference, and 30 pF load for standard switching parameters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64 K × 16 (1,048,576-bit total); supports 16-bit parallel data bus without external multiplexing |
| Access Time (tAA) | 10 ns max; enables direct interfacing with 100 MHz bus systems requiring sub-10 ns setup/handshake margins |
| VCC Supply | 3.3 V ±0.3 V; compatible with standard LVTTL and LVCMOS I/O domains |
| Operating Temperature | –40 °C to +85 °C; qualified for industrial automation and automotive-A environments |
| Active Current (ICC) | 60 mA max at 10 ns / 100 MHz; defines thermal budget for dense PCB layouts |
| Standby Current (ISB2) | 3 mA max under CMOS-input power-down; enables low-quiescent operation during idle cycles |
| Data Retention Voltage | 2.0 V min; allows battery-backed hold during brown-out or controlled shutdown sequences |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm body, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit row/column decode; supports full 64 K-word addressing without external latching |
| I/O0–I/O15 | Bidirectional Data I/Os | High-impedance tri-state during deselect, OE HIGH, or write; enables bus sharing |
| CE | Chip Enable | Primary device select; triggers automatic ISB2 power-down when HIGH |
| OE | Output Enable | Gates output drivers only; does not affect internal state or power mode |
| WE | Write Enable | Active-LOW write strobe; must be LOW with CE LOW to initiate write cycle |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write masking; allows partial-word updates without read-modify-write |
| VCC, VSS | Power & Ground | Dual VCC (pins 1, 48) and dual VSS (pins 24, 25) reduce IR drop and improve noise immunity |
| NC | No Connect | Not bonded on die; must be left unconnected per datasheet Note 1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual-Byte Write Control | Independent BHE/BLE pins enable selective 8-bit writes to upper or lower byte without disturbing adjacent data |
| Automatic Power-Down | CE-driven transition to ISB2 = 3 mA standby eliminates need for external power-gating logic |
| 2.0 V Data Retention | Maintains stored contents down to 2.0 V VCC, supporting graceful shutdown and backup battery operation |
| Pb-Free VFBGA Packaging | 48-ball VFBGA (BV suffix) provides 40% smaller footprint vs. 44-pin SOJ while maintaining thermal resistance θJA = 36 °C/W |
| Pin- and Function-Compatible | Drop-in replacement for CY7C1021CV33 in existing designs, preserving layout and firmware |
Applications
| Industrial PLC Data Buffer | FPGA Configuration Memory |
|---|---|
Use Scenario: Real-time I/O scanning in programmable logic controllers where deterministic memory access latency is required between CPU and fieldbus peripherals. IC Role / Device Role / Timing Role: High-speed parallel SRAM buffer holding process image data; interfaces directly to 16-bit microcontroller bus with tAA = 10 ns timing compliance. Use Value: Eliminates wait states in cyclic scan execution, enabling 100 µs cycle times with guaranteed read/write predictability across –40 °C to +85 °C. | Use Scenario: Storing configuration bitstreams for Xilinx Spartan or Intel Cyclone FPGAs during cold boot or dynamic reconfiguration. IC Role / Device Role / Timing Role: Non-volatile-retentive configuration store; powered from same 3.3 V rail as FPGA core, with CE tied to FPGA INIT_B for synchronized load. Use Value: Enables single-image boot without external PROM controller; 2.0 V retention allows safe reconfiguration during partial power loss. |
| Automotive Instrument Cluster Display Cache | Legacy ISA Bus Memory Expansion |
Use Scenario: Frame buffering for TFT LCD graphics in automotive digital instrument clusters operating under extended temperature and EMI stress. IC Role / Device Role / Timing Role: Dual-port-accessible display RAM; BHE/BLE used to update pixel rows/columns independently during GPU refresh cycles. Use Value: Reduces visual tearing by enabling atomic 8-bit pixel updates; ISB2 = 3 mA minimizes heat generation behind dashboard fascia. | Use Scenario: Adding 1 MB of fast local memory to vintage x86-based industrial PCs using ISA bus architecture. IC Role / Device Role / Timing Role: Drop-in SRAM replacement for obsolete HM628128; maps to 0xA0000–0xBFFFF with standard ISA address decoding. Use Value: Restores full 16-bit data path performance (vs. 8-bit workarounds) while meeting ISA timing constraints for tAA ≤ 10 ns and tRC = 10 ns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS6C1008-10TIN | 1-Mbit (128 K × 8), 10 ns, 3.3 V, 55 mA ICC, 2.5 V data retention | 8-bit organization requires bus-width adaptation; lacks BHE/BLE byte masking | Select only if system uses 8-bit data path and can accommodate external byte steering logic |
| IS61LV102416-10ML | 1-Mbit (64 K × 16), 10 ns, 3.3 V, 50 mA ICC, 2.0 V retention, 44-pin TSOP II only | Same organization and timing but no VFBGA option; higher θJA = 53.91 °C/W limits high-density placement | Prefer for cost-sensitive TSOP II designs where board space and thermal headroom permit |
Compared with AS6C1008-10TIN and IS61LV102416-10ML, the CY7C1021DV33-10BVXI uniquely combines 16-bit bus width, dual-byte enable, VFBGA packaging, and automotive-A qualification-making it optimal for space-constrained, thermally demanding, and safety-critical embedded systems requiring zero-bus-modification upgrades.
Availability
CY7C1021DV33-10BVXI is available at Aetrix Electronics and suitable for industrial PLC data buffers, FPGA configuration memory, and automotive instrument cluster display caches requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1021DV33-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and consumer markets.
The CY7C1021DV33 belongs to Cypress's high-speed parallel SRAM product line, designed specifically for legacy bus interface, real-time control buffering, and FPGA configuration storage where deterministic timing and low-power standby are critical.
FAQ
What is the maximum clock frequency supported by CY7C1021DV33-10BVXI?
The device has no internal clock; it is an asynchronous SRAM. Its maximum operational speed is defined by tRC = 10 ns, corresponding to a theoretical 100 MHz cycle rate. Actual bus frequency depends on system-level timing margins including address setup/hold, CE/OE assertion delays, and PCB trace propagation. Datasheet Figure 3 and Figure 4 define valid read/write waveforms under 30 pF load and 3 ns edge rates.
Can CY7C1021DV33-10BVXI operate with 2.5 V VCC?
No. The device is specified only for VCC = 3.3 V ±0.3 V (3.0 V to 3.6 V). Operation below 3.0 V violates DC electrical characteristics: VIH minimum drops to 2.0 V, but VOH and VOL specs become invalid, and tAA/tRC timing is not guaranteed. Data retention at 2.0 V applies only during standby-not active operation.
Does the BV package support reflow soldering per JEDEC J-STD-020?
Yes. The 48-ball VFBGA (BV) package is qualified for lead-free reflow per JEDEC J-STD-020D, with peak temperature of 260 °C for 30 seconds maximum. Thermal resistance data (θJA = 36 °C/W, θJC = 9 °C/W) assumes mounting on a four-layer PCB with 3 × 4.5 inch dimensions and standard thermal vias under the exposed pad area.
How does automatic power-down behave when CE is toggled rapidly?
Rapid CE toggling (e.g., >100 kHz) causes repeated entry/exit from ISB2 mode, increasing average current beyond 3 mA due to tPU (0 µs) and tPD (10 ns) transition overhead. Datasheet Section "Switching Characteristics" specifies tPU and tPD but does not guarantee stability under sub-microsecond CE dithering; for such use cases, external power sequencing control is recommended.
CY7C1021DV33-10BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1021DV33-10BVXI FAQ
1.How can I place an order for CY7C1021DV33-10BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021DV33-10BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021DV33-10BVXI reliable?
The price and inventory of CY7C1021DV33-10BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021DV33-10BVXI is usually 5 days.
3.What payment methods are accepted for CY7C1021DV33-10BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021DV33-10BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021DV33-10BVXI?
CY7C1021DV33-10BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021DV33-10BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021DV33-10BVXI?
For technical support, including CY7C1021DV33-10BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021DV33-10BVXI requirements.
6.How does Aetrix verify that CY7C1021DV33-10BVXI is sourced from the original manufacturer or authorized distributors?
All CY7C1021DV33-10BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021DV33-10BVXI meets industry standards.
7.What is the process for return or replacement of CY7C1021DV33-10BVXI?
All CY7C1021DV33-10BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021DV33-10BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021DV33-10BVXI part is unused and in its original packaging.
Return procedure for CY7C1021DV33-10BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1021DV33-10BVXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
