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Infineon Technologies CY7C1021DV33-10ZSXAT
- Part No.:
- CY7C1021DV33-10ZSXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021DV33-10ZSXAT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,864
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Product details
Overview
CY7C1021DV33-10ZSXAT from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, industrial/automotive-A temperature range (–40 °C to +85 °C), and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/BLE, operates with low active current (60 mA), and retains data at 2.0 V - deployed in automotive infotainment memory buffers and industrial PLC data logging subsystems.
For engineers reviewing the CY7C1021DV33-10ZSXAT datasheet, CY7C1021DV33-10ZSXAT pinout, CY7C1021DV33-10ZSXAT application, or CY7C1021DV33-10ZSXAT equivalent, key selection criteria include tAA ≤ 10 ns read timing, ISB2 ≤ 3 mA CMOS standby current, dual-byte enable control logic, and Pb-free 44-pin SOJ package compatibility with legacy CY7C1021CV33 designs.
Technical Context
The device implements a fully asynchronous SRAM architecture with separate Byte High Enable (BHE) and Byte Low Enable (BLE) inputs enabling independent 8-bit writes to upper/lower data words. Address decoding covers A0–A15 for full 64K-word addressing, with all I/O pins (I/O0–I/O15) placed in high-impedance state during deselect (CE HIGH), output disable (OE HIGH), or write cycles (WE LOW).
Power management relies on automatic CE-driven transition between active mode (ICC = 60 mA @ 10 ns) and CMOS standby (ISB2 = 3 mA), with guaranteed 2.0 V data retention and tPD = 10 ns power-down latency. Input thresholds meet TTL/CMOS-compatible VIH ≥ 2.0 V and VIL ≤ 0.8 V under 3.3 V ±0.3 V operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64 K × 16 (1,048,576-bit total); enables single-cycle 16-bit word access without external multiplexing |
| Access Time (tAA) | 10 ns maximum; ensures compatibility with 100 MHz bus timing in real-time control systems |
| VCC Supply | 3.3 V ± 0.3 V; requires tight-regulated LDO or DC-DC output, not compatible with 5 V or 2.5 V rails |
| Operating Temperature | –40 °C to +85 °C (Industrial/Automotive-A grade); validated for under-hood and factory-floor deployment |
| Standby Current (ISB2) | 3 mA maximum at CMOS input conditions; enables low-power sleep modes in battery-backed systems |
| Data Retention Voltage | 2.0 V minimum; allows memory hold during brown-out events without external backup capacitor |
| Package Type | 44-pin 400-mil wide molded SOJ (ZSXAT suffix); RoHS-compliant, through-hole mountable, JEDEC MO-089A compliant |
Pinout & Package
Package: 44-pin 400-mil wide molded SOJ (Small Outline J-Lead), Pb-free, JEDEC MO-089A compliant, body width 400 mil (10.16 mm), lead pitch 0.050 inch (1.27 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; fully decoded to select one of 65,536 memory locations |
| I/O0–I/O7 | Data Bus (Lower Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW during read/write |
| I/O8–I/O15 | Data Bus (Upper Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW during read/write |
| CE | Chip Enable | Active-low global enable; drives automatic power-down when HIGH (ISB2 = 3 mA) |
| WE | Write Enable | Active-low write strobe; must be LOW with CE LOW and BHE/BLE LOW to initiate write cycle |
| OE | Output Enable | Active-low output control; enables I/O drivers only when CE and OE are LOW and WE is HIGH |
| BLE | Byte Low Enable | Active-low control for lower byte (I/O0–I/O7); allows partial-word writes without disturbing upper byte |
| BHE | Byte High Enable | Active-low control for upper byte (I/O8–I/O15); enables independent 8-bit updates in mixed-data applications |
| VCC | Power Supply | 3.3 V ± 0.3 V main supply; two dedicated pins (pins 1 and 44) reduce IR drop in high-speed operation |
| VSS | Ground | Two ground pins (pins 23 and 24) provide low-inductance return path for I/O and core logic |
Key Features
| Feature | Design Value |
|---|---|
| Independent Byte Write Control | Separate BHE and BLE inputs allow concurrent or isolated 8-bit writes - eliminates need for external byte masking logic |
| Automatic CE Power-Down | Transitions to ISB2 ≤ 3 mA standby automatically on CE HIGH; no external control signal or sequencing required |
| 2.0 V Data Retention | Maintains stored data down to 2.0 V VCC; supports graceful degradation during power loss without external backup circuitry |
| High-Speed 10 ns Access | tAA = 10 ns at 3.3 V enables direct interface with 100 MHz microcontrollers (e.g., ARM Cortex-M7, Renesas RX65N) |
| Pb-Free SOJ Packaging | 44-pin 400-mil molded SOJ (ZSXAT) meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 |
Applications
| Automotive Infotainment Buffer | Industrial PLC Data Log Memory |
|---|---|
|
Use Scenario: Temporary storage of decoded audio frames and UI rendering assets in head-unit systems with intermittent power cycling. IC Role / Device Role: Asynchronous 16-bit SRAM buffer interfacing directly to SoC's parallel memory bus, managed by DMA controller. Use Value: 10 ns tAA enables zero-wait-state operation with NXP i.MX8QXP; 2.0 V data retention preserves playlist metadata during ignition-off transitions. |
Use Scenario: Cyclic buffering of sensor readings (temperature, pressure, vibration) in modular PLC backplanes with deterministic scan cycles. IC Role / Device Role: Non-volatile shadow RAM holding last valid measurement set during firmware update or watchdog reset. Use Value: Independent BHE/BLE control allows atomic updates of 8-bit sensor subfields without corrupting adjacent channel data. |
| Medical Imaging Frame Store | Avionics Display Refresh Buffer |
|
Use Scenario: Intermediate frame storage between FPGA-based image acquisition and ARM-based display processing in portable ultrasound devices. IC Role / Device Role: Dual-port-capable SRAM accessed simultaneously by acquisition engine (write) and display controller (read) using CE/OE arbitration. Use Value: tHZOE ≤ 5 ns and tLZOE ≤ 0 ns ensure glitch-free bus handoff; ISB2 ≤ 3 mA reduces thermal load in sealed enclosures. |
Use Scenario: Real-time refresh buffer feeding segmented LCD displays in flight deck multifunction displays (MFDs) with strict EMI constraints. IC Role / Device Role: High-reliability SRAM operating in extended temperature range, synchronized to ARINC 661 graphics pipeline clock. Use Value: –40 °C to +85 °C rating and Pb-free SOJ package meet DO-160G Section 22 radiated emissions and thermal shock requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed parallel SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61LV102416-10ML | Same 64K × 16 organization, 10 ns speed, but uses 44-pin TSOP II (not SOJ); ISB2 = 5 mA (vs. 3 mA) | Lacks automotive qualification; rated only for commercial/industrial temp (0 °C to +70 °C) | Select when board layout accommodates TSOP II footprint and automotive qualification is not required. |
| Cypress CY7C1021CV33-10ZSXI | Pin-and function-compatible predecessor; same SOJ package but higher ISB2 = 5 mA and no automotive-A grade support | Not qualified for automotive-A; lacks extended reliability screening per AEC-Q100 Grade 2 | Acceptable for cost-sensitive industrial designs where automotive qualification and lowest standby current are non-critical. |
Compared with IS61LV102416-10ML and CY7C1021CV33-10ZSXI, the CY7C1021DV33-10ZSXAT delivers tighter standby current (3 mA), automotive-A qualification, and identical SOJ pinout - making it the sole choice for new automotive designs requiring drop-in compatibility and extended temperature compliance.
Availability
CY7C1021DV33-10ZSXAT is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial programmable logic controllers, and avionics display subsystems requiring stable component supply across extended product lifecycles.
Supply support for CY7C1021DV33-10ZSXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies since 2020) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.
The CY7C1021D series was designed specifically for high-reliability, low-latency parallel SRAM applications in automotive and industrial control systems - emphasizing fast access, robust data retention, and extended temperature operation.
FAQ
Is CY7C1021DV33-10ZSXAT pin-compatible with CY7C1021CV33-10ZSXI?
Yes - the CY7C1021DV33-10ZSXAT is explicitly specified as pin-and function-compatible with CY7C1021CV33. Both use identical 44-pin SOJ packaging, matching pin assignments for A0–A15, I/O0–I/O15, CE, WE, OE, BHE, BLE, VCC, and VSS. No PCB redesign is needed for migration.
What is the maximum clock frequency supported for burst reads?
This is an asynchronous SRAM; it has no internal clock. Maximum effective throughput is determined by tRC = 10 ns, supporting up to 100 million random accesses per second. Burst transfers rely on external controller timing - no internal prefetch or pipelining is implemented.
Does the device support write protection or software-controlled lock bits?
No - the CY7C1021DV33-10ZSXAT provides no hardware or software write protection features. Data integrity during unintended writes must be ensured externally via CE gating, address decoding, or system-level memory management units (MMUs).
Can I operate this SRAM at 2.5 V to reduce power consumption?
No - the device is specified only for 3.3 V ± 0.3 V operation (3.0 V to 3.6 V). Operation below 3.0 V violates DC electrical characteristics: VOH drops below 2.4 V, VIH threshold becomes unreliable, and tAA exceeds 10 ns, risking data corruption.
CY7C1021DV33-10ZSXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1021DV33-10ZSXAT FAQ
1.How can I place an order for CY7C1021DV33-10ZSXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021DV33-10ZSXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021DV33-10ZSXAT reliable?
The price and inventory of CY7C1021DV33-10ZSXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021DV33-10ZSXAT is usually 5 days.
3.What payment methods are accepted for CY7C1021DV33-10ZSXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021DV33-10ZSXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021DV33-10ZSXAT?
CY7C1021DV33-10ZSXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021DV33-10ZSXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021DV33-10ZSXAT?
For technical support, including CY7C1021DV33-10ZSXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021DV33-10ZSXAT requirements.
6.How does Aetrix verify that CY7C1021DV33-10ZSXAT is sourced from the original manufacturer or authorized distributors?
All CY7C1021DV33-10ZSXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021DV33-10ZSXAT meets industry standards.
7.What is the process for return or replacement of CY7C1021DV33-10ZSXAT?
All CY7C1021DV33-10ZSXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021DV33-10ZSXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021DV33-10ZSXAT part is unused and in its original packaging.
Return procedure for CY7C1021DV33-10ZSXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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