Infineon Technologies CY7C1021DV33-10ZSXIT
- Part No.:
- CY7C1021DV33-10ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1021DV33-10ZSXIT.pdf
- Description:
- IC SRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:1,973
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1021DV33-10ZSXIT from Cypress Semiconductor is a 1-Mbit (64 K × 16) high-speed CMOS static RAM with 10 ns access time, 3.3 V supply, industrial/automotive-A temperature range (–40 °C to +85 °C), and automatic CE-controlled power-down. It supports independent byte-wide writes via BHE/BLE inputs and operates in SOJ-44 package for embedded memory buffering in real-time control systems.
For engineers reviewing the CY7C1021DV33-10ZSXIT datasheet, CY7C1021DV33-10ZSXIT pinout, CY7C1021DV33-10ZSXIT application, or CY7C1021DV33-10ZSXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 3 mA CMOS standby current, dual-byte enable architecture, and Pb-free SOJ-44 mechanical compatibility with legacy CY7C1021CV33 designs.
Technical Context
The device implements a synchronous, address-decoded 65,536 × 16-bit SRAM array with independent row/column decoding and sense amplifier-based read path. Its automatic power-down logic asserts high-impedance I/Os and reduces ICC to 3 mA when CE is HIGH under CMOS input conditions (VIN > VCC – 0.3 V or VIN < 0.3 V).
Write operations require simultaneous assertion of CE and WE LOW, with byte-selective data latching controlled by BHE (I/O8–I/O15) and BLE (I/O0–I/O7). Read operations require CE and OE LOW while WE remains HIGH, enabling output drivers only when corresponding byte enables are active.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 64 K × 16 (1,048,576 bits); supports 16-bit parallel data bus without external multiplexing |
| Access Time (tAA) | 10 ns maximum; enables direct interface with 100 MHz microcontrollers without wait states |
| VCC Supply | 3.3 V ± 0.3 V; compatible with standard LVTTL and LVCMOS I/O domains |
| Operating Temperature | –40 °C to +85 °C (Industrial/Automotive-A); validated for under-hood and industrial PLC environments |
| Standby Current (ISB2) | 3 mA maximum at VCC = 3.6 V; enables low-power sleep modes in battery-backed systems |
| Data Retention Voltage | 2.0 V minimum; allows retention during brown-out or backup-battery operation |
| Input Capacitance | 8 pF per pin; ensures signal integrity on 50 Ω PCB traces up to 100 MHz clock rates |
Pinout & Package
Package: 44-pin 400-mil wide molded SOJ (Small Outline J-Lead), Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A15 | Address Inputs | 16-bit address bus; selects one of 65,536 memory locations |
| I/O0–I/O7 | Data Input/Output (Lower Byte) | Bi-directional 8-bit data path enabled when BLE = LOW |
| I/O8–I/O15 | Data Input/Output (Upper Byte) | Bi-directional 8-bit data path enabled when BHE = LOW |
| CE | Chip Enable | Active-LOW global select; triggers automatic power-down when HIGH under CMOS conditions |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW |
| OE | Output Enable | Active-LOW output driver control; disables outputs (high-Z) when HIGH |
| BLE | Byte Low Enable | Active-LOW control for lower data byte (I/O0–I/O7); enables partial-word writes |
| BHE | Byte High Enable | Active-LOW control for upper data byte (I/O8–I/O15); enables partial-word writes |
| VCC | Power Supply | +3.3 V core and I/O supply; two dedicated pins reduce IR drop and noise coupling |
| VSS | Ground | Signal and power ground reference; two dedicated pins improve return path integrity |
| NC | No Connect | Unbonded die pads; must remain unconnected per datasheet Note 1 |
Key Features
| Feature | Design Value |
|---|---|
| Independent byte write control | Enables 8-bit sub-word writes without read-modify-write cycles, reducing bus traffic in mixed-data-width systems |
| Automatic CE power-down | Reduces ICC from 60 mA to 3 mA when CE is deasserted, eliminating need for external power-gating logic |
| 2.0 V data retention | Preserves memory contents during brown-out or backup-battery operation without external voltage supervision |
| Pb-free SOJ-44 packaging | Meets RoHS Directive 2011/65/EU; compatible with standard reflow profiles and legacy socket footprints |
| Pin-and function-compatible with CY7C1021CV33 | Enables drop-in replacement in existing designs without PCB or firmware changes |
Applications
| Industrial PLC Data Buffering | Automotive Engine Control Unit (ECU) Parameter Storage |
|---|---|
Use Scenario: Real-time I/O scanning and cyclic parameter logging in programmable logic controllers. IC Role / Device Role / Timing Role: High-speed scratchpad memory for temporary storage of sensor inputs and actuator outputs between scan cycles. Use Value: 10 ns tAA eliminates wait-state insertion on 32-bit ARM Cortex-M7 buses, maintaining deterministic 100 µs scan intervals. |
Use Scenario: Storing calibrated fuel injection maps and diagnostic trouble codes in engine management systems. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding runtime-critical calibration tables during active engine operation. Use Value: 2.0 V data retention ensures map integrity during cranking-induced 2.5 V rail dips, preventing limp-mode activation. |
| Medical Imaging Frame Buffer | Avionics Display System Memory |
Use Scenario: Intermediate frame storage in portable ultrasound devices with FPGA-based image processors. IC Role / Device Role / Timing Role: Dual-port-capable buffer supporting concurrent acquisition (via BLE/BHE) and display rendering (via OE-controlled reads). Use Value: Independent byte enables allow simultaneous 8-bit pixel stream ingestion and 16-bit RGB output formatting without arbitration logic. |
Use Scenario: HUD (Head-Up Display) graphics memory in certified flight deck systems requiring DO-254 compliance. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM for storing symbology overlays and terrain databases with guaranteed read stability. Use Value: –40 °C to +85 °C operating range and 3 mA ISB2 support extended mission durations in unpressurized avionics bays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV102416-10TQLI | tAA = 10 ns, but uses 32-pin TSOP-I; no BHE/BLE - single 16-bit bus only | Lacks byte-select capability; requires external logic for 8-bit partial writes | Select when board space is constrained and byte-level granularity is unnecessary |
| AS6C1008-10PCN | tAA = 10 ns, 3.3 V, but only 512 K × 8 organization; no VFBGA option | Requires external byte-to-word alignment for 16-bit interfaces | Select when cost sensitivity outweighs footprint flexibility and dual-byte control |
Compared with IS61LV102416-10TQLI and AS6C1008-10PCN, CY7C1021DV33-10ZSXIT uniquely delivers pin-compatible byte-enable functionality in SOJ-44, enabling direct replacement in legacy CY7C1021CV33 designs without layout or firmware modification.
Availability
CY7C1021DV33-10ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, automotive ECU parameter storage, and medical imaging frame buffering requiring stable component supply across extended product lifecycles.
Supply support for CY7C1021DV33-10ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable system-on-chip solutions for industrial, automotive, and aerospace applications.
The CY7C1021DV33 belongs to Cypress's legacy high-speed SRAM product line, engineered specifically for deterministic, low-latency memory interfacing in real-time embedded control systems where power efficiency and thermal robustness are critical.
FAQ
What is the maximum clock frequency supported for continuous read/write cycling?
The device does not use a clock; it is asynchronous. Maximum sustained operation is governed by tRC = 10 ns, enabling up to 100 MHz burst read/write cycles when CE, OE, and WE are driven with appropriate setup/hold timing. No internal PLL or clock multiplier is present-timing is purely combinatorial.
Can CY7C1021DV33-10ZSXIT operate with 2.5 V VCC?
No. The device is specified only for 3.3 V ± 0.3 V (3.0 V to 3.6 V). Operation at 2.5 V violates Absolute Maximum Ratings and will result in undefined behavior, including data corruption and failure to meet tAA = 10 ns. Data retention at 2.0 V applies only during standby, not active operation.
How does automatic power-down behave when CE is held HIGH but BHE/BLE are toggled?
When CE is HIGH, the device enters automatic power-down regardless of BHE/BLE state. All I/Os go high-impedance, ICC drops to ≤3 mA, and internal array is isolated. Toggling BHE/BLE has no effect unless CE is also LOW-byte enables are only sampled during active cycles.
Is the SOJ-44 package compatible with standard reflow soldering profiles?
Yes. The Pb-free SOJ-44 package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260 °C for 30 seconds. Recommended profile includes ramp rate ≤3 °C/s, preheat 150–200 °C for 90–120 s, and time above liquidus 217 °C of 60–150 s.
CY7C1021DV33-10ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1021DV33-10ZSXIT FAQ
1.How can I place an order for CY7C1021DV33-10ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1021DV33-10ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1021DV33-10ZSXIT reliable?
The price and inventory of CY7C1021DV33-10ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1021DV33-10ZSXIT is usually 5 days.
3.What payment methods are accepted for CY7C1021DV33-10ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1021DV33-10ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1021DV33-10ZSXIT?
CY7C1021DV33-10ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1021DV33-10ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1021DV33-10ZSXIT?
For technical support, including CY7C1021DV33-10ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1021DV33-10ZSXIT requirements.
6.How does Aetrix verify that CY7C1021DV33-10ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1021DV33-10ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1021DV33-10ZSXIT meets industry standards.
7.What is the process for return or replacement of CY7C1021DV33-10ZSXIT?
All CY7C1021DV33-10ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1021DV33-10ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1021DV33-10ZSXIT part is unused and in its original packaging.
Return procedure for CY7C1021DV33-10ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1021DV33-10ZSXIT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

