Infineon Technologies CY7C1024DV33-10BGXIT

Overview

CY7C1024DV33-10BGXIT from Cypress Semiconductor is a 3-Mbit (128K × 24) asynchronous CMOS static RAM with 10 ns access time, 3.3 V ±0.3 V supply, and automatic CE-controlled power-down mode. It features 24 bidirectional I/O lines, TTL-compatible interfaces, and operates across –40°C to +85°C for industrial embedded memory subsystems requiring deterministic timing and low standby current.

For engineers reviewing the CY7C1024DV33-10BGXIT datasheet, CY7C1024DV33-10BGXIT pinout, CY7C1024DV33-10BGXIT application, or CY7C1024DV33-10BGXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 25 µA CMOS standby current, 119-ball PBGA package compatibility, and multi-chip enable architecture (CE1/CE2/CE3) for hierarchical memory expansion.

Technical Context

This SRAM implements a fully decoded 128K × 24 array with independent column and row decoders, sense amplifiers, and input/output buffers. Its three chip-enable inputs (CE1, CE2, CE3) define a hierarchical selection logic where CE = LOW only when CE1 = LOW, CE2 = HIGH, and CE3 = LOW - enabling flexible bank partitioning in multi-SRAM systems.

The device supports three distinct operational states: active read (OE = LOW, WE = HIGH), active write (WE = LOW), and automatic power-down (any CE condition invalid). Output drivers enter high-impedance state during deselect or OE = HIGH, and data retention is guaranteed at VCC = 2.0 V with ICCDR ≤ 25 µA.

Key Specifications

Pinout & Package

Package: 119-ball Plastic Ball Grid Array (PBGA), 14 mm × 22 mm body, 1.0 mm ball pitch, Pb-free, industrial temperature range (–40°C to +85°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV12824AL-10MLI and W9825G6JH-10, the CY7C1024DV33-10BGXIT delivers guaranteed asynchronous 10 ns access in a thermally robust PBGA package with native CE hierarchy - making it optimal for deterministic, low-jitter memory subsystems in industrial and avionics control.

Availability

CY7C1024DV33-10BGXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA configuration memory, medical imaging frame storage, and avionics display caching requiring stable component supply over extended production lifecycles.

Supply support for CY7C1024DV33-10BGXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer applications.

The CY7C1024DV33 belongs to Cypress's high-speed parallel SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where asynchronous access and power-aware standby modes are essential.

FAQ

What is the minimum VCC required to retain data in CY7C1024DV33-10BGXIT?

The device guarantees data retention down to VCC = 2.0 V under specified conditions (CE > VCC – 0.2 V, input pins held at valid logic levels). At this voltage, ICCDR remains ≤ 25 µA. Operation below 3.0 V disables normal read/write functionality, but retained data persists until VCC falls below 2.0 V or ambient temperature exceeds +85°C.

Can CY7C1024DV33-10BGXIT be used with 2.5 V I/O interfaces?

No. The device requires VCC = 3.3 V ± 0.3 V and specifies VIH(min) = 2.0 V and VIL(max) = 0.8 V - incompatible with 2.5 V logic thresholds. Driving inputs below 2.0 V risks undefined CE/OE/WE states; connecting to 2.5 V outputs may exceed absolute maximum input voltage ratings (–0.5 V to VCC + 0.5 V = 3.8 V).

How does the triple CE architecture improve memory system design?

The CE1/CE2/CE3 combination allows three-level chip selection: CE1 controls major bank, CE2 enables sub-bank, CE3 selects quadrant. This eliminates external address decoders in multi-SRAM systems, reduces PCB routing complexity, and enables software-selectable memory regions without hardware changes - critical for field-upgradable industrial firmware.

Is CY7C1024DV33-10BGXIT RoHS compliant and Pb-free?

Yes. The "-10BGXIT" suffix denotes Pb-free packaging per JEDEC J-STD-609, confirmed in Cypress's ordering information (Package Type: 119-Ball Plastic Ball Grid Array, Pb-Free). The device meets RoHS Directive 2011/65/EU and has no exemptions applied; all solder balls contain Sn/Ag/Cu alloy with no lead content above 0.1 wt%.