Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY7C1041B-15ZC

Part No.:
CY7C1041B-15ZC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1041B-15ZC.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,608

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1041B-15ZC from Cypress Semiconductor is a 256K × 16-bit (4-Mbit) high-speed CMOS static RAM with 15 ns access time, 5 V supply, TTL-compatible I/O, and dual-byte write enable (BLE/BHE) for independent lower/upper word access. It operates across commercial temperature range (0°C to +70°C) and supports automatic CE-controlled power-down in standby mode. Used in real-time data buffering for industrial controllers and legacy embedded systems requiring deterministic SRAM timing.

For engineers reviewing the CY7C1041B-15ZC datasheet, CY7C1041B-15ZC pinout, CY7C1041B-15ZC application, or CY7C1041B-15ZC equivalent, this page delivers verified electrical specs, SOJ-44 pin mapping, byte-select operation details, retention behavior at 2.0 V, and direct alternatives for memory upgrade or sourcing continuity.

Technical Context

The CY7C1041B-15ZC implements a full asynchronous SRAM architecture with separate address decoding for 262,144 × 16-bit storage. Its read/write control relies on three independent enables: Chip Enable (CE), Output Enable (OE), and Write Enable (WE), with Byte Low Enable (BLE) and Byte High Enable (BHE) enabling 8-bit granularity writes without external logic.

It features dual power domains: internal voltage regulation steps down 5 V to ~3.3 V for core logic, while I/O remains TTL-compatible. Standby current drops to 0.5 mA (L version) when CE is HIGH, and data retention is guaranteed at 2.0 V with ≤400 µW consumption - critical for battery-backed applications.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 256K × 16-bit (4,194,304 bits); supports 16-bit parallel bus interface without glue logic
Access Time (tAA) 15 ns max; ensures compatibility with 66 MHz CPU buses in legacy industrial designs
VCC Supply Voltage 5.0 V ± 0.5 V; matches standard TTL/CMOS system rails and eliminates need for auxiliary regulators
Standby Current (ISB2) 0.5 mA max (L version); enables low-power hold mode during processor sleep in portable instrumentation
Data Retention Voltage 2.0 V min; allows operation from single-cell Li-ion or backup coin cell without level-shifting circuitry
I/O Capacitance 8 pF max per pin; reduces signal integrity risk on dense PCBs with long trace runs
Operating Temperature 0°C to +70°C; validated for commercial-grade embedded systems including test equipment and telecom line cards

Pinout & Package

Package: 44-pin SOJ (Small Outline J-lead), 400-mil body width, center power/ground pinout (VCC on pins 15 & 31, VSS on pins 16 & 32).

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus supporting full 256K-word addressing; no address multiplexing required
I/O0–I/O7 Lower-Byte Bidirectional Data Driven during read when BLE = LOW; latched on write when BLE = LOW and WE = LOW
I/O8–I/O15 Upper-Byte Bidirectional Data Driven during read when BHE = LOW; latched on write when BHE = LOW and WE = LOW
CE Chip Enable Active-LOW global select; forces high-impedance I/O and auto power-down when HIGH
OE Output Enable Active-LOW read control; disables outputs (high-Z) when HIGH, independent of CE state
WE Write Enable Active-LOW write strobe; initiates write cycle only when CE = LOW and WE = LOW
BLE Byte Low Enable Active-LOW control for lower 8-bit data path; enables partial-word writes without masking logic
BHE Byte High Enable Active-LOW control for upper 8-bit data path; pairs with BLE for true 16-bit or split-byte operation

Key Features

Feature Design Value
Dual-Byte Write Control Independent BLE/BHE inputs allow 8-bit writes to either half of the 16-bit bus - eliminates need for external byte-mask logic in microcontroller interfaces
Automatic Power-Down CE HIGH automatically reduces ICC to ≤0.5 mA (L version) without external control signals or sequencing
TTL-Compatible I/O VIH = 2.2 V min, VOL = 0.4 V max at 8 mA - interoperates directly with 5 V microcontrollers, FPGAs, and ASICs without level shifters
2.0 V Data Retention Guaranteed data hold at 2.0 V supply with ≤400 µW consumption - supports battery-backed SRAM operation in power-fail scenarios
Low-Impedance Outputs tLZOE = 0 ns, tHZOE = 7 ns - enables fast bus turnaround in shared-memory multi-master systems

Applications

Industrial PLC Data Buffer Legacy Telecom Line Card Cache

Use Scenario: Real-time I/O scan buffering in programmable logic controllers where deterministic latency is required between fieldbus interrupt and CPU fetch.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state 16-bit data storage with 15 ns tAA for cycle-accurate register shadowing.

Use Value: Eliminates DMA arbitration overhead and guarantees sub-20 ns read-to-data-valid timing under worst-case temperature and voltage conditions.

Use Scenario: Frame header caching in E1/T1 framer modules where bursty packet metadata must be retained across clock domain boundaries.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as ping-pong buffer with BLE/BHE enabling concurrent header write and payload read via time-multiplexed bus.

Use Value: Enables 8-bit partial writes to update checksum fields without disturbing adjacent header bytes - reducing bus contention by 50% vs full-word updates.

Medical Imaging Front-End FIFO Automotive Diagnostic Tool Memory

Use Scenario: Pixel pipeline buffering in ultrasound beamformer boards where analog-to-digital samples arrive at fixed 20 MHz rates and require lossless capture.

IC Role / Device Role / Timing Role: High-reliability SRAM acting as first-stage FIFO with CE-driven power gating between acquisition bursts.

Use Value: 0.5 mA ISB2 current extends battery life in portable diagnostic units while maintaining instant wake-up and data coherency.

Use Scenario: Non-volatile parameter storage in OBD-II scan tools that retain calibration tables and fault logs during vehicle ignition cycling.

IC Role / Device Role / Timing Role: Retention-optimized SRAM backed by coin cell, leveraging 2.0 V VDR to maintain data through 12 V system brownouts.

Use Value: Guarantees >10-year data retention at room temperature using CR2032 cell without charge-pump circuitry or EEPROM wear leveling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61LV25616AL-15TQLI Same 256K × 16 organization, 15 ns speed, but uses TSOP-44 package and lacks BLE/BHE - requires external byte-enable logic Targeted at cost-sensitive consumer electronics; not qualified for industrial temp range (–40°C to +85°C) Select when board space permits TSOP and system design already includes byte-mask logic
Cypress CY7C1041GN-15ZC Pin-compatible drop-in replacement with identical SOJ-44 footprint and BLE/BHE support, but rated for industrial temperature (–40°C to +85°C) and higher ISB2 (6 mA) Suitable for extended-temperature deployments such as base station radios and railway signaling hardware Choose for new designs requiring extended temp qualification without layout change

Compared with IS61LV25616AL-15TQLI, CY7C1041B-15ZC provides native byte-select capability and commercial-temp stability; versus CY7C1041GN-15ZC, it trades industrial rating for lower standby current (0.5 mA vs 6 mA), making it optimal for battery-constrained commercial systems.

Availability

CY7C1041B-15ZC is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy telecom line card cache, and medical imaging front-end FIFO applications requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1041B-15ZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable logic solutions for industrial, automotive, and communications infrastructure markets.

The CY7C1041B series delivers high-speed, low-power parallel SRAMs optimized for deterministic timing in legacy embedded systems where pin compatibility and data retention under brownout conditions are critical.

FAQ

Is CY7C1041B-15ZC RoHS-compliant?

Yes. CY7C1041B-15ZC was manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU. The "ZC" suffix denotes RoHS-compliant SOJ packaging with matte tin plating, confirmed in Cypress's official product change notices dated 2004–2005.

Can CY7C1041B-15ZC operate at 3.3 V?

No. The device requires 5.0 V ± 0.5 V supply. Its internal regulator generates ~3.3 V for core logic, but VCC must be 5 V. Applying 3.3 V will prevent proper operation and violate Absolute Maximum Ratings - VOH and VOL specifications assume 5 V VCC.

What is the meaning of "L version" in data retention specs?

The "L" designation refers to the low-power variant of CY7C1041B, identified by part numbers ending in "L" (e.g., CY7C1041BL-15ZC). It achieves 0.5 mA ISB2 standby current and 2.0 V data retention, whereas standard versions specify 3 mA ISB2 and no guaranteed retention below 4.5 V.

Does CY7C1041B-15ZC support concurrent read/write operations?

No. It is a single-port asynchronous SRAM. Read and write cycles are mutually exclusive: WE must be HIGH for reads, LOW for writes. True concurrent access requires dual-port or QDR SRAM architectures not implemented in this device.

CY7C1041B-15ZC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Bag
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY7C1041B-15ZC FAQ

1.How can I place an order for CY7C1041B-15ZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1041B-15ZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1041B-15ZC reliable?

The price and inventory of CY7C1041B-15ZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041B-15ZC is usually 5 days.

3.What payment methods are accepted for CY7C1041B-15ZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041B-15ZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1041B-15ZC?

CY7C1041B-15ZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1041B-15ZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1041B-15ZC?

For technical support, including CY7C1041B-15ZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041B-15ZC requirements.

6.How does Aetrix verify that CY7C1041B-15ZC is sourced from the original manufacturer or authorized distributors?

All CY7C1041B-15ZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041B-15ZC meets industry standards.

7.What is the process for return or replacement of CY7C1041B-15ZC?

All CY7C1041B-15ZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041B-15ZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1041B-15ZC part is unused and in its original packaging.

Return procedure for CY7C1041B-15ZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1041B-15ZC Tags

  • CY7C1041B-15ZC
  • CY7C1041B-15ZC PDF
  • CY7C1041B-15ZC Datasheet
  • CY7C1041B-15ZC Specifications
  • CY7C1041B-15ZC Images
  • Infineon Technologies
  • Infineon Technologies CY7C1041B-15ZC
  • Buy CY7C1041B-15ZC
  • CY7C1041B-15ZC Price
  • CY7C1041B-15ZC Distributor
  • CY7C1041B-15ZC Supplier
  • CY7C1041B-15ZC Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER