Infineon Technologies CY7C1041CV33-10BAJXE
- Part No.:
- CY7C1041CV33-10BAJXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY7C1041CV33-10BAJXE.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:12,965
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1041CV33-10BAJXE from Cypress Semiconductor is an automotive-grade 4-Mbit (256 K × 16) CMOS static RAM with 10 ns access time, operating over –40 °C to +125 °C, supporting 3.3 V ±10% supply, and featuring independent byte enable (BHE/BLE) for high-speed memory expansion in engine control units and ADAS domain controllers.
For engineers reviewing the CY7C1041CV33-10BAJXE datasheet, CY7C1041CV33-10BAJXE pinout, CY7C1041CV33-10BAJXE application, or CY7C1041CV33-10BAJXE equivalent, key selection criteria include tAA = 10 ns read timing, automatic CE-controlled power-down (ISB2 ≤ 15 mA), dual-byte write capability, BGA-48 packaging, and automotive-E qualification per AEC-Q100.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory array organized as 262,144 × 16 bits with full address decoding (A0–A17), sense amplifiers, and data drivers. It supports three active read modes (address-, CE-, or OE-controlled) and two write modes (CE- or byte-enable-controlled), with all I/Os entering high-impedance state when CE, OE, BHE, or BLE are deasserted.
The device uses TTL/CMOS-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V), features 8 pF input/output capacitance, and achieves thermal resistance of θJA = 38.15 °C/W on a four-layer PCB - enabling stable operation under transient thermal loads in under-hood environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256 K × 16); enables single-chip storage for firmware buffers or real-time sensor history in ECUs. |
| Access time (tAA) | 10 ns max; supports tight timing budgets in 100 MHz+ microcontroller interfaces without wait states. |
| Operating temperature | –40 °C to +125 °C (Automotive-E); qualified for direct mounting near powertrain or radar modules. |
| VCC supply | 3.3 V ±10%; compatible with standard automotive LDO rails and eliminates need for level-shifting. |
| Standby current (ISB2) | 15 mA max at VCC max and f = 0; enables low-power sleep mode during vehicle ignition-off periods. |
| Package | 48-ball BGA (9 mm × 9 mm, 0.8 mm pitch); supports high-density PCB layouts with automated reflow assembly. |
| Byte enable control | Independent BHE/BLE inputs; allows concurrent 8-bit writes to upper/lower bytes without read-modify-write overhead. |
Pinout & Package
48-ball BGA package (JEDEC MO-270AB, 9 mm × 9 mm body, 0.8 mm ball pitch), RoHS-compliant, Pb-free, with 4 NC (no-connect) balls (pins A1, D1, G1, H11).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256 K-word addressing; no external address latching required. |
| I/O0–I/O7 | Data bus (lower byte) | Bi-directional 8-bit data path enabled only when BLE = LOW; isolated during BHE-only operations. |
| I/O8–I/O15 | Data bus (upper byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; operates independently of lower byte. |
| CE | Chip Enable | Active-LOW global select; initiates automatic power-down when HIGH, reducing ICC to ≤15 mA. |
| OE | Output Enable | Active-LOW output gate; controls data bus drive without affecting internal memory state or power mode. |
| WE | Write Enable | Active-LOW write strobe; combined with CE and BHE/BLE to define write cycle boundaries per JEDEC timing. |
| BLE | Byte Low Enable | Active-LOW control for I/O0–I/O7; enables partial writes without disturbing upper byte contents. |
| BHE | Byte High Enable | Active-LOW control for I/O8–I/O15; permits interleaved byte writes in multi-processor shared-memory systems. |
| VCC | Power supply | 3.3 V core supply (two dedicated pins: C4, D3); decoupling required within 5 mm for noise immunity. |
| VSS | Ground | Ground reference (two dedicated pins: D4, E3); must be connected to low-impedance plane for signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | AEC-Q100 Grade 1 (–40 °C to +125 °C ambient), validated for 15-year automotive service life. |
| Automatic power-down | CE-driven transition to ISB2 ≤ 15 mA standby without external logic or clock gating. |
| Dual-byte write architecture | Independent BHE/BLE inputs eliminate need for external byte-masking logic in 16-bit bus systems. |
| High-speed interface | tRC = 10 ns and tDOE = 6 ns support direct connection to Cortex-R5 or TriCore TC3xx MCU memory buses. |
| Robust I/O interface | VIH/VIL thresholds tolerate 3.3 V rail droop; 8 pF CIN/COUT ensures signal integrity up to 100 MHz trace lengths. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
Use Scenario: Real-time logging of crankshaft position, throttle angle, and O2 sensor data at 10 kHz sampling rate. IC Role / Device Role / Timing Role: High-speed buffer memory interfacing directly with Infineon AURIX TC397 via 16-bit parallel bus. Use Value: 10 ns tAA eliminates wait states, enabling deterministic 100 µs loop execution; BHE/BLE allows timestamp+data atomic writes. | Use Scenario: Frame buffering for 77 GHz radar pre-processing in front-facing collision avoidance modules. IC Role / Device Role / Timing Role: Dual-port-accessible scratchpad for TI TDA3x DSP co-processor during FFT windowing and CFAR detection. Use Value: Independent byte enables allow simultaneous radar parameter update (upper byte) and raw ADC sample storage (lower byte) without bus contention. |
| Body Control Module (BCM) | Infotainment Head Unit |
Use Scenario: Storing seat/mirror position profiles and HVAC calibration tables across ignition cycles. IC Role / Device Role / Timing Role: Non-volatile-retained SRAM used with backup battery; retains data at 2.0 V VCC during cranking dips. Use Value: 2.0 V data retention threshold ensures zero data loss during cold-cranking events down to 6 V battery voltage. | Use Scenario: Audio codec buffer for Dolby Digital decoding and multi-zone speaker routing. IC Role / Device Role / Timing Role: Low-latency memory for Cirrus Logic CS43L22 audio processor's FIFO management. Use Value: 468 mW max active power enables thermal compliance in sealed head unit enclosures without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10MLI | 10 ns tAA, but only –40 °C to +85 °C industrial grade; no AEC-Q100 qualification. | Not suitable for powertrain or ADAS; limited to cabin electronics with relaxed thermal requirements. | Select only if AEC-Q100 is not mandated and ambient stays below 85 °C. |
| AS6C4008-10BIN | 10 ns tAA, –40 °C to +85 °C, 32-pin SOP package; lacks byte enable and BGA footprint. | Requires PCB redesign and adds board area; incompatible with high-density ADAS modules. | Choose only for legacy industrial upgrades where SOP compatibility is mandatory. |
Compared with IS61WV25616EDBLL-10MLI and AS6C4008-10BIN, CY7C1041CV33-10BAJXE uniquely delivers AEC-Q100 Grade 1 qualification, true dual-byte control, and BGA-48 packaging - making it the only drop-in solution for safety-critical automotive memory subsystems requiring guaranteed operation at 125 °C.
Availability
CY7C1041CV33-10BAJXE is available at Aetrix Electronics and suitable for engine control units, ADAS radar processors, body control modules, and infotainment head units requiring stable component supply across extended automotive lifecycles.
Supply support for CY7C1041CV33-10BAJXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for automotive, industrial, and IoT applications, with focus on functional safety and long-term supply stability.
The CY7C1041CV33 belongs to Cypress's automotive SRAM product line, engineered specifically for AEC-Q100-compliant, high-speed parallel memory interfacing in safety-critical electronic control units.
FAQ
What is the minimum VCC required to retain data in CY7C1041CV33-10BAJXE?
The device guarantees data retention down to 2.0 V VCC across the full automotive temperature range (–40 °C to +125 °C). This specification is verified per AEC-Q100 stress testing and enables reliable operation during engine cranking when battery voltage drops to 6–7 V and LDO output sags accordingly.
Does CY7C1041CV33-10BAJXE support true simultaneous read/write on upper and lower bytes?
No - the device does not support true simultaneous read/write. BHE and BLE control write enable only; reads require OE and CE assertion and affect the entire 16-bit word. However, independent byte enables allow selective writing to either byte without disturbing the other, reducing software overhead in partial-update scenarios.
How is power-down triggered, and what is the recovery latency?
Power-down is automatically initiated when CE is driven HIGH while the device is deselected. Recovery to active operation requires CE LOW followed by tPU = 100 µs minimum delay before first valid access. This delay is fixed and independent of clock or external timing signals.
Are the NC pins on the 48-ball BGA required to be grounded or left floating?
NC pins (A1, D1, G1, H11) are not connected to the die and must be left unconnected - neither grounded nor tied to VCC. Solder mask should fully cover these pads to prevent accidental shorts; no thermal or electrical function is assigned to them per Cypress Package Drawing 001-86495.
CY7C1041CV33-10BAJXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (7x8.5)
CY7C1041CV33-10BAJXE FAQ
1.How can I place an order for CY7C1041CV33-10BAJXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041CV33-10BAJXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041CV33-10BAJXE reliable?
The price and inventory of CY7C1041CV33-10BAJXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041CV33-10BAJXE is usually 5 days.
3.What payment methods are accepted for CY7C1041CV33-10BAJXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041CV33-10BAJXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041CV33-10BAJXE?
CY7C1041CV33-10BAJXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041CV33-10BAJXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041CV33-10BAJXE?
For technical support, including CY7C1041CV33-10BAJXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041CV33-10BAJXE requirements.
6.How does Aetrix verify that CY7C1041CV33-10BAJXE is sourced from the original manufacturer or authorized distributors?
All CY7C1041CV33-10BAJXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041CV33-10BAJXE meets industry standards.
7.What is the process for return or replacement of CY7C1041CV33-10BAJXE?
All CY7C1041CV33-10BAJXE units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041CV33-10BAJXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041CV33-10BAJXE part is unused and in its original packaging.
Return procedure for CY7C1041CV33-10BAJXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1041CV33-10BAJXE Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

