Infineon Technologies CY7C1041CV33-10BAXAT

Overview

CY7C1041CV33-10BAXAT from Cypress Semiconductor is an automotive-grade 4-Mbit (256 K × 16) CMOS static RAM with 10 ns access time, TTL-compatible I/O, and dual-byte write control via BHE/BLE. It operates across –40 °C to +125 °C (Automotive-E grade), supports automatic CE power-down (15 mA max standby), and is packaged in a 44-pin 400-mil SOJ. Used for real-time data buffering in engine control units and ADAS domain controllers.

For engineers reviewing the CY7C1041CV33-10BAXAT datasheet, CY7C1041CV33-10BAXAT pinout, CY7C1041CV33-10BAXAT application, or CY7C1041CV33-10BAXAT equivalent, key selection criteria include its 10 ns tAA timing at 3.3 V, byte-selectable 16-bit I/O architecture, Automotive-E temperature compliance, and SOJ package compatibility with legacy PCB footprints.

Technical Context

This SRAM implements a synchronous, non-volatile-access memory array organized as 262,144 × 16 bits, with independent high- and low-byte enable paths (BHE/BLE) enabling partial-word writes without read-modify-write cycles. Address decoding uses hierarchical row/column architecture with sense amplifiers driving bidirectional I/O lines.

All control inputs (CE, WE, OE, BHE, BLE) are active-low and TTL-compatible. Output enable (OE) and chip enable (CE) jointly manage tri-state behavior: outputs enter high-impedance state when CE is HIGH, OE is HIGH, or during write operations (WE LOW). Power-down is fully automatic upon CE deassertion.

Key Specifications

Pinout & Package

Package: 44-pin 400-mil SOJ (Small Outline J-Lead), JEDEC MS-025 compliant, lead-free (Pb-free) finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed automotive SRAM applications.

Compared with IS61WV25616EDBLL-10MLI, CY7C1041CV33-10BAXAT delivers guaranteed 125 °C operation and AEC-Q100 compliance, while versus CY7C1041DV33-10ZXC, it offers superior thermal dissipation and mechanical reliability in vibration-prone SOJ form factor.

Availability

CY7C1041CV33-10BAXAT is available at Aetrix Electronics and suitable for engine control units, ADAS radar processors, and body control modules requiring stable component supply across automotive production lifecycles.

Supply support for CY7C1041CV33-10BAXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT markets, with global manufacturing and AEC-Q100 validation infrastructure.

CY7C1041CV33 belongs to Cypress's automotive SRAM product line, engineered specifically for deterministic, low-latency data buffering in safety-critical electronic control units operating under extreme thermal and EMI conditions.

FAQ

Is CY7C1041CV33-10BAXAT qualified to AEC-Q100?

Yes. This part is qualified to AEC-Q100 Grade 1 (–40 °C to +125 °C), with full stress testing including HTOL, TCT, and ESD per automotive standards. The "Automotive-E" designation in the datasheet confirms its qualification scope, and the BAXAT suffix denotes the 44-pin SOJ Pb-free package variant meeting automotive solderability and RoHS requirements.

What is the maximum clock frequency supported for burst reads?

The CY7C1041CV33-10BAXAT does not use a clock signal; it is an asynchronous SRAM. Its maximum effective throughput is governed by tRC = 10 ns, enabling up to 100 MHz random access rate. Burst reads rely on address sequencing and CE/OE timing - no internal clock limits apply, and no setup/hold clock constraints exist.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes. Asserting both BHE and BLE LOW while CE and WE are LOW enables simultaneous writing of all 16 data bits (I/O0–I/O15) to the addressed location. This is the standard full-word write mode, documented in the Truth Table (page 11) and functional description - no timing penalty or conflict occurs when both byte enables are active.

Does this SRAM retain data during VCC brown-out events?

No. As a volatile static RAM, CY7C1041CV33-10BAXAT requires continuous VCC within 3.3 V ±10% to retain data. Below VCC(min) = 2.97 V, data retention is not guaranteed. For brown-out resilience, external circuitry (e.g., power-fail interrupt + controlled save-to-EEPROM) must be implemented - the device has no built-in non-volatility or backup power path.