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Infineon Technologies CY7C1041CV33-10BAXET
- Part No.:
- CY7C1041CV33-10BAXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY7C1041CV33-10BAXET.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
CY7C1041CV33-10BAXET from Cypress Semiconductor is an automotive-grade 4-Mbit (256 K × 16) CMOS static RAM with 10 ns access time, TTL-compatible I/O, and dual-byte write enable (BHE/BLE). It operates across –40 °C to +125 °C (Automotive-E grade), supports automatic CE power-down (ISB2 ≤ 15 mA), and is packaged in a 44-pin 400-mil SOJ. It serves as main data buffer in engine control units requiring deterministic low-latency memory access.
For engineers reviewing the CY7C1041CV33-10BAXET datasheet, CY7C1041CV33-10BAXET pinout, CY7C1041CV33-10BAXET application, or CY7C1041CV33-10BAXET equivalent, this page delivers verified timing parameters, byte-select logic behavior, thermal resistance values (θJA = 25.99 °C/W), and package-specific pin mapping for SOJ-44 - critical for ECU memory subsystem layout and power integrity validation.
Technical Context
This SRAM implements a synchronous, non-volatile-accessible 256K × 16-bit array with independent high- and low-byte write control via BHE and BLE inputs. All address (A0–A17) and bidirectional I/O (I/O0–I/O15) signals are TTL-compatible, enabling direct interfacing with legacy microcontrollers without level-shifting.
Its read cycle is controlled either by address transition (tAA = 10 ns) or OE assertion (tDOE = 6 ns, Automotive-E), while write operations require overlapping CE LOW, WE LOW, and active BHE/BLE. Power management relies on automatic CE-driven standby (ISB2 = 15 mA max at 125 °C), eliminating need for external sleep control logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256 K × 16-bit (4 Mbit total); enables 16-bit parallel bus interface without external data multiplexing |
| Access Time (tAA) | 10 ns (max) at –40 °C to +125 °C; guarantees worst-case latency for real-time ECU interrupt response |
| Supply Voltage | 3.3 V ±10%; compatible with standard automotive 3.3 V power rails and LDO outputs |
| Standby Current (ISB2) | 15 mA max at 125 °C with CMOS inputs; ensures low quiescent draw during extended vehicle-off states |
| Operating Temperature | –40 °C to +125 °C (Automotive-E grade); qualified for under-hood engine control module placement |
| Package Thermal Resistance (θJA) | 25.99 °C/W (SOJ-44); supports thermal design margin calculation for 432 mW max active power |
| I/O Compatibility | TTL input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and output drive (IOH = –4 mA, IOL = 8 mA); interoperable with legacy MCU GPIOs |
Pinout & Package
Package: 44-pin 400-mil SOJ (Small Outline J-Lead), JEDEC MS-024AC compliant, lead-free (Pb-free) finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus; selects one of 262,144 memory locations; no internal latching - requires stable address during CE/WE assertion |
| I/O0–I/O7 | Bidirectional Data (Low Byte) | Data path for lower 8 bits; enabled only when BLE = LOW during read/write; tri-stated when BLE or CE or OE is HIGH |
| I/O8–I/O15 | Bidirectional Data (High Byte) | Data path for upper 8 bits; enabled only when BHE = LOW; independent control allows partial-word writes without read-modify-write |
| CE | Chip Enable (Active LOW) | Primary device select; forces full chip into high-Z or standby when HIGH; initiates automatic power-down (ISB2 mode) |
| WE | Write Enable (Active LOW) | Controls R/W direction; LOW with CE LOW and BHE/BLE LOW enables write; HIGH with CE/OE LOW enables read |
| OE | Output Enable (Active LOW) | Enables I/O drivers during read; must be LOW with CE LOW; HIGH places I/O pins in high-impedance state regardless of CE/WE |
| BHE, BLE | Byte Write Enable (Active LOW) | Independent gating of high/low data bytes; permits 8-bit writes to 16-bit bus - essential for mixed-width peripheral interfacing |
| VCC | Power Supply | Two dedicated 3.3 V supply pins (pins 11 & 33); reduces IR drop and noise coupling in high-speed operation |
| VSS | Ground | Two dedicated ground pins (pins 12 & 34); provides low-inductance return path for I/O and core current |
Key Features
| Feature | Design Value |
|---|---|
| Dual-byte write control (BHE/BLE) | Enables independent 8-bit writes to upper/lower data lanes - eliminates software overhead of read-modify-write for partial updates |
| Automatic CE power-down (ISB2) | Reduces standby current to 15 mA max at 125 °C without external control signals or firmware intervention |
| TTL-compatible I/O | Direct interface with legacy 3.3 V MCUs (e.g., Infineon TC1797, NXP MPC56xx) without level shifters or bus buffers |
| 10 ns access time at 125 °C | Guaranteed timing performance over full automotive temperature range - critical for deterministic real-time control loops |
| 44-pin SOJ package | Industry-standard footprint with J-leads; supports automated optical inspection (AOI) and reflow compatibility per J-STD-020 |
Applications
| Engine Control Unit (ECU) | Transmission Control Module (TCM) |
|---|---|
|
Use Scenario: Real-time storage of sensor-calibrated lookup tables and transient engine state variables during combustion cycles. IC Role / Device Role / Timing Role: Primary working memory for 32-bit RISC MCU executing closed-loop fuel injection and ignition timing calculations. Use Value: 10 ns tAA ensures memory access completes within single CPU clock cycle at 100 MHz, avoiding pipeline stalls. |
Use Scenario: Buffering torque-map interpolation results and gear-shift decision history for adaptive transmission logic. IC Role / Device Role / Timing Role: High-reliability scratchpad memory supporting deterministic response to CAN bus torque requests within 50 µs. Use Value: Dual-byte write enables atomic update of 16-bit torque command words without bus contention or lock mechanisms. |
| Advanced Driver Assistance System (ADAS) Camera ECU | Body Control Module (BCM) |
|
Use Scenario: Temporary frame metadata storage (exposure, gain, ROI coordinates) between image sensor capture and DSP preprocessing. IC Role / Device Role / Timing Role: Low-latency buffer interfaced directly to parallel camera interface (PCI) of SoC such as TI TDA2x. Use Value: TTL-compatible I/O and 432 mW max active power allow direct connection without signal conditioning, reducing BOM count. |
Use Scenario: Storing door-lock actuation history, window position calibration, and lighting fade profiles across ignition cycles. IC Role / Device Role / Timing Role: Non-volatile-shadowed RAM holding configuration data updated infrequently but accessed on-demand during wake-up. Use Value: ISB2 ≤ 15 mA at 125 °C enables >10-year battery-backed retention in always-on BCM designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10MLI | Same 256K × 16 organization, 10 ns speed, but -40 °C to +85 °C (Industrial grade), no Automotive-E qualification | Lacks AEC-Q100 Grade 1 qualification; unsuitable for under-hood deployment above 85 °C ambient | Select only for cabin-mounted modules where ambient stays ≤ 85 °C and AEC-Q100 compliance is not mandated |
| AS6C4008-10BIN | 4-Mbit (512K × 8) organization, 10 ns speed, -40 °C to +85 °C, single-byte interface (no BHE/BLE) | Requires external data bus widening or software byte-swapping; lacks independent byte write capability | Choose only if system uses 8-bit data path or can accommodate software-managed 16-bit writes |
Compared with IS61WV25616EDBLL-10MLI and AS6C4008-10BIN, CY7C1041CV33-10BAXET uniquely delivers Automotive-E temperature support, dual-byte write control, and SOJ-44 packaging - making it the sole option for space-constrained, high-temperature ECU designs requiring hardware-level 8-bit write granularity.
Availability
CY7C1041CV33-10BAXET is available at Aetrix Electronics and suitable for engine control units, transmission control modules, and ADAS camera ECUs requiring stable component supply across automotive production lifecycles.
Supply support for CY7C1041CV33-10BAXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT systems, with global manufacturing and AEC-Q100 qualification infrastructure.
CY7C1041CV33 belongs to Cypress's automotive SRAM product line, engineered specifically for real-time control applications demanding guaranteed timing, extended temperature operation, and robust ESD/latch-up immunity in harsh electrical environments.
FAQ
What is the maximum operating current for CY7C1041CV33-10BAXET at 125 °C?
The maximum operating current (ICC) is 130 mA at –40 °C to +125 °C (Automotive-E grade), measured at VCC = 3.63 V and f = 1/tRC. This value accounts for worst-case process, voltage, and temperature corner conditions and is specified in the Electrical Characteristics table on page 5 of the datasheet.
Does CY7C1041CV33-10BAXET support true 8-bit partial writes without read-modify-write?
Yes. The independent Byte High Enable (BHE) and Byte Low Enable (BLE) inputs allow hardware-gated 8-bit writes to I/O8–I/O15 or I/O0–I/O7 respectively. When only one is asserted LOW with CE and WE LOW, only that byte lane is written - no internal read cycle or software intervention is required.
Can CY7C1041CV33-10BAXET be used with a 3.0 V supply?
No. The device requires VCC = 3.3 V ±10% (2.97 V to 3.63 V). Operation below 2.97 V violates the Absolute Maximum Ratings and causes undefined behavior, including failure to meet tAA = 10 ns or proper power-down entry. It is not 3.0 V tolerant.
Is the 44-pin SOJ package of CY7C1041CV33-10BAXET RoHS-compliant and lead-free?
Yes. The "BAXET" suffix denotes a Pb-free (lead-free) 44-pin SOJ package, qualified to JEDEC J-STD-020 moisture sensitivity level 3 and compliant with RoHS Directive 2011/65/EU. The datasheet confirms Pb-free finish in the Ordering Information section (page 12).
CY7C1041CV33-10BAXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (7x8.5)
CY7C1041CV33-10BAXET FAQ
1.How can I place an order for CY7C1041CV33-10BAXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041CV33-10BAXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041CV33-10BAXET reliable?
The price and inventory of CY7C1041CV33-10BAXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041CV33-10BAXET is usually 5 days.
3.What payment methods are accepted for CY7C1041CV33-10BAXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041CV33-10BAXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041CV33-10BAXET?
CY7C1041CV33-10BAXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041CV33-10BAXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041CV33-10BAXET?
For technical support, including CY7C1041CV33-10BAXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041CV33-10BAXET requirements.
6.How does Aetrix verify that CY7C1041CV33-10BAXET is sourced from the original manufacturer or authorized distributors?
All CY7C1041CV33-10BAXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041CV33-10BAXET meets industry standards.
7.What is the process for return or replacement of CY7C1041CV33-10BAXET?
All CY7C1041CV33-10BAXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041CV33-10BAXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041CV33-10BAXET part is unused and in its original packaging.
Return procedure for CY7C1041CV33-10BAXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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