My Inquiry
My Account
Infineon Technologies CY7C1041CV33-10ZSXA
- Part No.:
- CY7C1041CV33-10ZSXA
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1041CV33-10ZSXA.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,049
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1041CV33-10ZSXA from Cypress Semiconductor is an automotive-grade 4-Mbit (256 K × 16) CMOS static RAM with 10 ns access time, TTL-compatible I/O, and dual-byte write enable (BHE/BLE) for flexible data bus control. It operates across –40 °C to +125 °C (Automotive-E grade), supports automatic CE power-down (ISB2 ≤ 15 mA), and is packaged in a 44-pin TSOP II (ZSXA suffix). Used in engine control units, ADAS domain controllers, and infotainment memory buffers where deterministic timing and AEC-Q100 compliance are required.
For engineers reviewing the CY7C1041CV33-10ZSXA datasheet, CY7C1041CV33-10ZSXA pinout, CY7C1041CV33-10ZSXA application, or CY7C1041CV33-10ZSXA equivalent, key selection criteria include tAA = 10 ns at 125 °C, byte-selectable 16-bit I/O architecture, CE/OE/WE/BHE/BLE control logic, and support for high-reliability automotive memory expansion without external latching.
Technical Context
This SRAM implements a synchronous, non-volatile-independent 256K × 16-bit array with fully decoded address inputs (A0–A17), bidirectional I/O0–I/O15, and independent byte-enable control via BHE (I/O8–I/O15) and BLE (I/O0–I/O7). Read and write operations are initiated by active-low CE combined with OE HIGH/WE LOW (read) or WE LOW (write).
It features automatic power-down when CE is HIGH, delivering ISB2 ≤ 15 mA at 125 °C with CMOS input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and guaranteed output drive (VOH ≥ 2.4 V at –4 mA, VOL ≤ 0.4 V at 8 mA). All timing parameters-including tRC = 10 ns, tACE = 10 ns, and tPD = 20 ns-are specified over full Automotive-E temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (256 K × 16); enables single-chip 32 KB data buffer for real-time ECU logging or sensor fusion. |
| Access Time (tAA) | 10 ns max at –40 °C to +125 °C; ensures deterministic read latency in safety-critical timing paths. |
| Operating Voltage | 3.3 V ±10%; compatible with standard automotive 3.3 V power rails without level-shifting. |
| Power Consumption | Max ICC = 130 mA (Auto-E), ISB2 = 15 mA; supports low-quiescent-power sleep modes in always-on domains. |
| Temperature Range | –40 °C to +125 °C (Automotive-E); qualified per AEC-Q100 Grade 1 for under-hood applications. |
| Package | 44-pin TSOP II (ZSXA); surface-mount footprint with 0.8 mm pitch, JEDEC MO-141 compliant. |
| I/O Interface | TTL-compatible inputs/outputs; eliminates need for bus interface logic in legacy MCU designs. |
Pinout & Package
44-pin TSOP II (ZSXA) package with 400-mil body width, gull-wing leads, and standard JEDEC MO-141 mechanical dimensions. Pin 1 index located at top-left corner (notch-marked side).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus; selects one of 262,144 memory locations (256 K words). |
| I/O0–I/O7 | Bidirectional Data (Low Byte) | Data path for lower 8 bits; enabled only when BLE = LOW during read/write. |
| I/O8–I/O15 | Bidirectional Data (High Byte) | Data path for upper 8 bits; enabled only when BHE = LOW during read/write. |
| CE | Chip Enable (Active LOW) | Global select signal; forces device into standby (ISB2) when HIGH. |
| OE | Output Enable (Active LOW) | Controls I/O direction: LOW enables output drivers; HIGH places pins in high-Z. |
| WE | Write Enable (Active LOW) | Initiates write cycle when CE and WE both LOW; defines write timing reference. |
| BHE / BLE | Byte High/Low Enable (Active LOW) | Independent 8-bit write masking-enables partial-word writes without read-modify-write. |
| VCC | Power Supply | 3.3 V supply pin (dual pins: pins 11 & 33); reduces IR drop and noise coupling. |
| VSS | Ground | Ground return (dual pins: pins 12 & 34); improves signal integrity and EMI performance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-byte write enable (BHE/BLE) | Enables independent 8-bit writes to upper/lower data bytes-reducing bus traffic and eliminating software overhead for partial updates. |
| Automatic CE power-down | Reduces standby current to ISB2 ≤ 15 mA at 125 °C without external control logic or clock gating. |
| 10 ns access at 125 °C | Guarantees worst-case tAA ≤ 10 ns across full Automotive-E temperature range-critical for deterministic real-time response. |
| TTL-compatible I/O | Direct interface with legacy 3.3 V microcontrollers (e.g., Infineon TC2xx, NXP S32K) without level translators or pull-up resistors. |
| AEC-Q100 Grade 1 qualification | Validated for continuous operation at 125 °C ambient-suitable for engine bay, transmission control, and radar modules. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Real-time storage of sensor-calibrated lookup tables and transient engine parameter logs during combustion cycles. IC Role / Device Role / Timing Role: High-speed, non-refreshing data buffer interfacing directly with TriCore or Power Architecture MCUs via 16-bit parallel bus. Use Value: 10 ns tAA ensures zero-cycle wait-state operation at 100 MHz bus clock, enabling sub-millisecond control loop execution. |
Use Scenario: Frame buffering for surround-view camera processors requiring burst-mode pixel data capture and stitching. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as temporary line buffer between image sensor interface and SoC video pipeline. Use Value: Independent BHE/BLE allows concurrent write of left/right camera streams into separate 8-bit lanes-reducing inter-frame latency by 35%. |
| Infotainment Head Unit | Electric Powertrain Controller |
|
Use Scenario: Audio DSP instruction cache and audio sample FIFO in multi-zone digital audio amplifiers. IC Role / Device Role / Timing Role: Low-latency memory mapped to ARM Cortex-A53 core's AXI bus via parallel interface bridge. Use Value: Automatic CE power-down cuts idle power by 82% versus standard SRAM-extending system-level energy efficiency during display-off states. |
Use Scenario: Fault-code history storage and torque-map interpolation tables in inverter control modules operating near motor heat sinks. IC Role / Device Role / Timing Role: Temperature-hardened memory co-located with SiC gate driver ICs on same PCB layer. Use Value: Guaranteed operation at 125 °C junction temperature eliminates need for thermal derating or forced-air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10MLI | 10 ns tAA, but rated only to +85 °C (Industrial); no AEC-Q100 qualification; 48-ball TFBGA only. | Limited to cabin electronics or non-safety systems; unsuitable for under-hood deployment. | Select only if cost sensitivity outweighs thermal and qualification requirements. |
| AS6C4008-10TIN | 10 ns tAA, +125 °C operation, but 512 K × 8 organization; requires two devices for 256 K × 16 width. | Increases PCB area and routing complexity; doubles address decode logic and power delivery points. | Choose only when existing design uses 8-bit bus architecture and board space permits dual-SRAM layout. |
Compared with IS61WV25616EDBLL-10MLI and AS6C4008-10TIN, CY7C1041CV33-10ZSXA uniquely delivers 256 K × 16 density, 10 ns access at 125 °C, AEC-Q100 Grade 1 certification, and TSOP II packaging-all in a single monolithic device optimized for automotive parallel bus integration.
Availability
CY7C1041CV33-10ZSXA is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and electric powertrain controllers requiring stable component supply across extended automotive lifecycles.
Supply support for CY7C1041CV33-10ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and qualification infrastructure.
CY7C1041CV33 belongs to Cypress's automotive SRAM product line, engineered specifically for AEC-Q100-compliant, high-speed parallel memory interfaces in safety-critical vehicle subsystems.
FAQ
Is CY7C1041CV33-10ZSXA pin-compatible with CY7C1041BNV33?
Yes, CY7C1041CV33-10ZSXA is pin- and function-compatible with CY7C1041BNV33 per datasheet Section 1. It shares identical pinout, signal definitions, and AC/DC electrical specifications, enabling direct replacement in existing designs without layout changes.
What is the maximum operating frequency supported by the 10 ns access time?
The 10 ns access time corresponds to a maximum read cycle time (tRC) of 10 ns, supporting up to 100 MHz bus operation. This assumes proper setup/hold timing margins and load capacitance ≤30 pF as defined in Figure 3(a) of the datasheet.
Does CY7C1041CV33-10ZSXA require external refresh circuitry?
No. As a static RAM, CY7C1041CV33-10ZSXA retains data indefinitely while powered and does not require refresh cycles. Its operation is purely asynchronous and controlled solely by CE, OE, WE, and byte-enable signals.
Can BHE and BLE be asserted simultaneously for full 16-bit writes?
Yes. Asserting both BHE and BLE LOW enables simultaneous write to all 16 I/O lines (I/O0–I/O15). The device treats this as a full-word write, and internal logic ensures atomicity without requiring additional strobes or handshaking.
CY7C1041CV33-10ZSXA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY7C1041CV33-10ZSXA FAQ
1.How can I place an order for CY7C1041CV33-10ZSXA through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041CV33-10ZSXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041CV33-10ZSXA reliable?
The price and inventory of CY7C1041CV33-10ZSXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041CV33-10ZSXA is usually 5 days.
3.What payment methods are accepted for CY7C1041CV33-10ZSXA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041CV33-10ZSXA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041CV33-10ZSXA?
CY7C1041CV33-10ZSXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041CV33-10ZSXA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041CV33-10ZSXA?
For technical support, including CY7C1041CV33-10ZSXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041CV33-10ZSXA requirements.
6.How does Aetrix verify that CY7C1041CV33-10ZSXA is sourced from the original manufacturer or authorized distributors?
All CY7C1041CV33-10ZSXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041CV33-10ZSXA meets industry standards.
7.What is the process for return or replacement of CY7C1041CV33-10ZSXA?
All CY7C1041CV33-10ZSXA units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041CV33-10ZSXA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041CV33-10ZSXA part is unused and in its original packaging.
Return procedure for CY7C1041CV33-10ZSXA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1041CV33-10ZSXA Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
