Infineon Technologies CY7C1041CV33-12VXC

Overview

CY7C1041CV33-12VXC from Cypress Semiconductor is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns maximum access time, 3.3 V supply, TTL-compatible I/O, and automatic CE-controlled power-down. It supports byte-wide write enable via BHE/ BLE, operates across industrial temperature (–40°C to +85°C), and is packaged in a 44-pin TSOP II with center power/ground pinout for noise immunity in embedded memory subsystems.

For engineers reviewing the CY7C1041CV33-12VXC datasheet, CY7C1041CV33-12VXC pinout, CY7C1041CV33-12VXC application, or CY7C1041CV33-12VXC equivalent, key selection criteria include tAA ≤ 12 ns, ISB2 ≤ 10 mA (CMOS standby), VCC = 3.3 V ± 0.3 V, byte-select capability, and industrial-grade thermal resistance (ΘJA = 42.96 °C/W in TSOP II).

Technical Context

The CY7C1041CV33-12VXC implements a fully asynchronous SRAM architecture with independent byte-write control (BHE/BLE), enabling partial-word writes without external logic. Its dual active-low chip enable (CE) and output enable (OE) allow seamless memory expansion in multi-bank systems.

It features TTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and CMOS-level output drive (VOH ≥ 2.4 V at –4 mA, VOL ≤ 0.4 V at 8 mA), ensuring interoperability with legacy 3.3 V microcontrollers and FPGAs while maintaining low dynamic power (ICC ≤ 95 mA at fMAX).

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (400-mil body width), 1.27 mm pitch, center power/ground pinout (VCC on pins 11 & 33, VSS on pins 12 & 34).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with IS61LV25616AL-12TQLI, the CY7C1041CV33-12VXC offers superior noise immunity via center VCC/VSS and lower standby current; versus MC14LC5481DW, it provides native 3.3 V operation and true byte-write capability-critical for deterministic real-time firmware execution.

Availability

CY7C1041CV33-12VXC is available at Aetrix Electronics and suitable for industrial PLC data buffers, automotive engine control units, and medical imaging frame buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1041CV33-12VXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable logic solutions for industrial, automotive, and communications markets.

The CY7C1041CV33 belongs to Cypress's high-speed asynchronous SRAM product line, designed specifically for low-latency, deterministic memory access in real-time embedded systems where refresh-free operation and wide temperature stability are mandatory.

FAQ

Is CY7C1041CV33-12VXC pin-compatible with CY7C1041BV33?

Yes, the CY7C1041CV33-12VXC is explicitly pin-equivalent to the CY7C1041BV33 per its datasheet Feature section. Both share identical 44-pin TSOP II pinout, address/data/control signal mapping, and byte-enable functionality. However, the 'V' suffix denotes enhanced voltage tolerance (2.0 V data retention) and updated process technology-no PCB redesign is needed for migration.

What is the minimum VCC required to retain data during power loss?

The CY7C1041CV33-12VXC guarantees data retention down to 2.0 V VCC, as confirmed in the Functional Description section. This allows integration with backup capacitors or supercapacitors that decay slowly below nominal 3.3 V, preserving critical state information during brief power interruptions without external nonvolatile memory.

Does this SRAM require an external clock or refresh circuitry?

No. The CY7C1041CV33-12VXC is a fully static RAM with no clock input and zero refresh requirement. All timing is controlled asynchronously by CE, OE, WE, and BHE/BLE signals. This eliminates jitter-sensitive clock distribution and simplifies power domain isolation in mixed-signal systems.

Can BLE and BHE be asserted simultaneously for full 16-bit writes?

Yes. When both BLE and BHE are driven LOW, the device performs a full 16-bit write to I/O0–I/O15 as specified in the Truth Table (Mode: "Write All Bits"). This is the default write mode and requires no special timing sequencing-CE and WE must both be LOW, with address stable prior to WE assertion.