Infineon Technologies CY7C1041CV33-12ZSXE

Overview

CY7C1041CV33-12ZSXE from Cypress Semiconductor is an automotive-grade 4-Mbit (256 K × 16) CMOS static RAM with 12 ns access time, TTL-compatible I/O, and dual-byte write enable (BHE/BLE) for flexible data bus control. It operates across –40 °C to +125 °C (Automotive-E grade), supports automatic CE power-down (ISB2 ≤ 15 mA), and is packaged in a 44-pin TSOP II.

For engineers reviewing the CY7C1041CV33-12ZSXE datasheet, CY7C1041CV33-12ZSXE pinout, CY7C1041CV33-12ZSXE application, or CY7C1041CV33-12ZSXE equivalent, this page delivers verified timing parameters, byte-select logic behavior, thermal resistance values (θJA = 42.96 °C/W), and real-world automotive memory expansion use cases.

Technical Context

This SRAM implements a synchronous, non-volatile-access architecture with independent high- and low-byte enables (BHE/BLE), enabling partial-word writes without external logic. Its address decoding supports full 18-bit addressing (A0–A17) for 262,144 × 16-bit organization and features tri-state I/Os controlled by CE, OE, BHE, and BLE.

Switching behavior is defined by strict AC timing: tAA = 12 ns (max), tRC = 12 ns (max), tDOE = 7 ns (max at Automotive-E), and tHZOE = 8 ns (max). Power management includes two standby modes-TTL-input ISB1 ≤ 45 mA and CMOS-input ISB2 ≤ 15 mA-activated automatically on CE HIGH.

Key Specifications

Pinout & Package

44-pin TSOP II (ZSXE) package with 400-mil width, lead pitch of 0.8 mm, and standard JEDEC MO-141AC footprint. Pin 1 marked by notch or dot; pins arranged in single row on each long edge.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV25616EDBLL-12BLI and AS6C4008-12ZIN, CY7C1041CV33-12ZSXE uniquely delivers automotive-grade reliability, integrated byte-select logic, and guaranteed 125 °C operation-making it the sole choice for safety-critical powertrain and ADAS memory buffering.

Availability

CY7C1041CV33-12ZSXE is available at Aetrix Electronics and suitable for engine control units, advanced driver assistance systems, and transmission control modules requiring stable component supply across automotive production lifecycles.

Supply support for CY7C1041CV33-12ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and AEC-Q100-compliant qualification infrastructure.

CY7C1041CV33 belongs to Cypress's automotive SRAM product line, engineered specifically for deterministic, low-latency data buffering in safety-critical ECUs where refresh-free operation and extended temperature resilience are mandatory.

FAQ

What is the maximum junction temperature supported by CY7C1041CV33-12ZSXE?

The device is rated for operation up to +125 °C ambient (Automotive-E grade) with a thermal resistance θJA of 42.96 °C/W in the 44-pin TSOP II package. Under typical 3.3 V, 100 mA active current conditions, calculated junction temperature remains within safe limits (<150 °C) without forced cooling, per JEDEC JESD51-2A testing methodology.

Does CY7C1041CV33-12ZSXE require an external clock signal?

No. This is an asynchronous static RAM; all operations are controlled solely by CE, OE, WE, BHE, and BLE signal timing-no clock input is present or needed. Data access is initiated on signal edge transitions, not clock edges, enabling direct integration with microcontroller external bus interfaces lacking clocked memory controllers.

Can CY7C1041CV33-12ZSXE be used in a 16-bit wide memory system without byte-enable logic?

Yes. When both BHE and BLE are held LOW continuously, the device functions as a full 16-bit-wide SRAM with I/O0–I/O15 active. The byte-enable inputs are optional; their omission simplifies design but forfeits partial-word write capability and increases bus contention risk during mixed-width accesses.

Is the 44-pin TSOP II package (ZSXE) RoHS-compliant and lead-free?

Yes. The ZSXE suffix denotes a Pb-free (lead-free) 44-pin TSOP II package compliant with RoHS Directive 2011/65/EU and JEDEC Standard J-STD-020. Solder reflow profiles follow IPC/JEDEC J-STD-020D for MSL-3 handling, with peak temperature tolerance up to 260 °C.