Infineon Technologies CY7C1041CV33-12ZSXET

Overview

CY7C1041CV33-12ZSXET from Cypress Semiconductor is an automotive-grade 4-Mbit (256 K × 16) CMOS static RAM with 12 ns access time, TTL-compatible I/O, and dual-byte write control via BHE/BLE pins. It operates across –40 °C to +125 °C (Automotive-E grade), supports automatic CE power-down (ISB2 ≤ 15 mA), and is packaged in a 48-ball FBGA. It serves as main data buffer memory in engine control units requiring deterministic read/write timing.

For engineers reviewing the CY7C1041CV33-12ZSXET datasheet, CY7C1041CV33-12ZSXET pinout, CY7C1041CV33-12ZSXET application, or CY7C1041CV33-12ZSXET equivalent, key selection criteria include tAA = 12 ns, byte-selectable 16-bit I/O architecture, Automotive-E temperature compliance, and FBGA package thermal resistance (θJC = 9.15 °C/W).

Technical Context

This SRAM implements a synchronous, non-volatile-access memory array organized as 262,144 × 16 bits with full address decoding (A0–A17), independent high/low byte enables (BHE/BLE), and tri-state I/O drivers controlled by CE, OE, and WE. All control inputs are active-low and TTL-compatible.

It features two power-down modes: ISB1 (TTL input thresholds, ≤45 mA) and ISB2 (CMOS input thresholds, ≤15 mA), triggered automatically when CE is HIGH and all inputs are valid. Output leakage (IOZ ≤ ±20 µA) and input leakage (IIX ≤ ±20 µA) are specified over full Automotive-E range.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (10 mm × 11.5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV25616EDBLL-12BLI and MT45W8MW16BGX-12D:J, the CY7C1041CV33-12ZSXET uniquely delivers guaranteed 12 ns access with zero refresh overhead and full AEC-Q100 Grade 1 compliance-critical for ASIL-B/C timing-critical automotive control loops.

Availability

CY7C1041CV33-12ZSXET is available at Aetrix Electronics and suitable for engine control units, ADAS camera buffers, and electric power steering controllers requiring stable component supply across extended automotive temperature ranges and long production lifecycles.

Supply support for CY7C1041CV33-12ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and qualification infrastructure.

This device belongs to Cypress's automotive-qualified parallel SRAM product line, engineered specifically for deterministic, low-latency data buffering in safety-critical vehicle subsystems operating under extreme thermal and electrical stress.

FAQ

Is CY7C1041CV33-12ZSXET pin-compatible with CY7C1041BNV33?

Yes, it is pin- and function-compatible with CY7C1041BNV33 per the datasheet's "Pin and function compatible" statement. Both share identical 48-ball FBGA pinout, address/data/control signal mapping, and byte-enable architecture-enabling drop-in replacement in existing designs qualified for the BNV33 variant.

What is the maximum clock frequency supported for read/write cycles?

The device does not use a clock; it is asynchronous. Maximum operational frequency is derived from tRC = 12 ns, yielding up to 83.3 MHz sustained random access rate. Cycle timing depends solely on CE/OE/WE setup/hold relationships-not a system clock edge.

Does this SRAM require external refresh circuitry?

No. As a static RAM, CY7C1041CV33-12ZSXET retains data indefinitely while powered and does not require refresh cycles. This eliminates refresh-related latency jitter and simplifies timing design in real-time automotive control applications.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes. Asserting both BHE and BLE LOW enables concurrent write operations to I/O8–I/O15 and I/O0–I/O7, allowing full 16-bit word writes in a single cycle-matching standard microprocessor bus protocols without additional glue logic.