Infineon Technologies CY7C1041CV33-15ZC

Overview

CY7C1041CV33-15ZC from Cypress Semiconductor is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 15 ns maximum access time, 3.3V supply, TTL-compatible I/O, and automatic CE-controlled power-down. It supports byte-wide writes via independent BHE/ BLE controls and operates across industrial temperature range (–40°C to +85°C) in 44-pin TSOP II package. Used in real-time data buffering for industrial controllers and network packet memory.

For engineers reviewing the CY7C1041CV33-15ZC datasheet, CY7C1041CV33-15ZC pinout, CY7C1041CV33-15ZC application, or CY7C1041CV33-15ZC equivalent, key selection criteria include tAA ≤ 15 ns, ISB2 ≤ 10 mA standby current, VCC = 3.3V ±0.3V tolerance, byte-select capability, and industrial-grade thermal resistance (ΘJA = 42.96°C/W in TSOP II).

Technical Context

The CY7C1041CV33-15ZC implements a synchronous, non-volatile-retentive SRAM array with full address decoding (A0–A17), bidirectional 16-bit I/O (I/O0–I/O15), and dual-byte write enable logic (BHE/BLE). Its read/write timing is governed by overlapping CE/WE/OE control signals, with tRC = 15 ns and tPD = 15 ns for CE-driven power-down.

It features TTL-compatible input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V), CMOS-level output drive (VOH ≥ 2.4 V at –4 mA, VOL ≤ 0.4 V at 8 mA), and low-leakage operation (IIX ≤ ±1 µA, IOZ ≤ ±1 µA) under industrial conditions. The device enters automatic power-down when CE is HIGH, reducing ICC to ISB2 = 10 mA max.

Key Specifications

Pinout & Package

44-pin TSOP II (400-mil body width) with center power/ground pinout. Pin 11 and Pin 33 are VCC; Pin 12 and Pin 34 are VSS. I/O lines are split across two 8-bit groups (I/O0–I/O7 on Pins 7–10,13–16; I/O8–I/O15 on Pins 29–32,35–38) for byte-select operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with IS61LV25616AL-15TQLI and MC14LC5481P, the CY7C1041CV33-15ZC uniquely delivers industrial-grade 15 ns performance with native byte-select, zero-level-shift 3.3 V operation, and automatic CE power-down-making it optimal for space- and power-constrained embedded buffers.

Availability

CY7C1041CV33-15ZC is available at Aetrix Electronics and suitable for industrial PLC data buffering, network packet memory, medical imaging FIFO, and automotive ADAS preprocessing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1041CV33-15ZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1041CV33 belongs to Cypress's parallel SRAM product line, designed specifically for low-latency, high-reliability data buffering in real-time embedded systems where predictability and industrial qualification are mandatory.

FAQ

Is CY7C1041CV33-15ZC pin-compatible with CY7C1041BV33?

Yes. The CY7C1041CV33-15ZC is explicitly specified as pin-equivalent to CY7C1041BV33 in the datasheet, sharing identical 44-pin TSOP II pinout, signal definitions, and DC/AC electrical characteristics. No PCB redesign is needed for migration, though timing margins may improve due to enhanced tAA spec.

What is the minimum VCC required to retain data?

The device guarantees data retention down to 2.0 V VCC across the full industrial temperature range (–40°C to +85°C), as stated in the Functional Description section. This enables reliable hold-mode operation during brown-out events without external backup power or capacitors.

Does CY7C1041CV33-15ZC support true dual-port operation?

No. It is a single-port SRAM with one address bus and shared I/O pins. While CE/OE/WE sequencing allows overlapping read/write control, simultaneous independent access (e.g., read and write at same address) is not supported. True dual-port functionality requires dedicated dual-port SRAM devices.

Can BHE and BLE be used simultaneously for full 16-bit writes?

Yes. When both BHE and BLE are driven LOW while CE and WE are LOW, the device performs a full 16-bit write to I/O0–I/O15. The truth table confirms "Write All Bits" mode under CE=L, WE=L, BLE=L, BHE=L - no additional timing or control overhead is required.