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Infineon Technologies CY7C1041CV33-20VXE
- Part No.:
- CY7C1041CV33-20VXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1041CV33-20VXE.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
CY7C1041CV33-20VXE from Cypress Semiconductor is an automotive-grade 4-Mbit (256 K × 16) CMOS static RAM with 20 ns access time, TTL-compatible I/O, and dual-byte write enable (BHE/BLE). It operates across –40 °C to +125 °C (Automotive-E grade), supports automatic CE power-down (ISB2 ≤ 15 mA), and is packaged in a 44-pin 400-mil SOJ. It serves as main data buffer memory in engine control units requiring deterministic, non-volatile-access timing.
For engineers reviewing the CY7C1041CV33-20VXE datasheet, CY7C1041CV33-20VXE pinout, CY7C1041CV33-20VXE application, or CY7C1041CV33-20VXE equivalent, key selection criteria include tAA = 20 ns read access, byte-selectable 16-bit I/O architecture, CE/OE/WE/BHE/BLE control logic compatibility, and Automotive-E thermal compliance for under-hood deployment.
Technical Context
This SRAM implements a synchronous, address-decoded 256K × 16-bit array with independent high- and low-byte write enables (BHE, BLE), enabling partial-word writes without read-modify-write cycles. Its CE-controlled automatic power-down mode reduces standby current to 15 mA at 125 °C, while TTL-compatible inputs ensure direct interfacing with legacy microcontrollers.
Read operations require CE and OE asserted low with WE high; write operations require CE and WE low, plus active BHE or BLE to select I/O8–I/O15 or I/O0–I/O7 respectively. All I/O pins enter high-impedance state when CE is high, OE is high, or during write cycles - eliminating bus contention in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256 K × 16 bits (4 Mbit total); enables single-cycle 16-bit data transfers without interleaving. |
| Access Time (tAA) | 20 ns max at VCC = 3.3 V ±10%, TA = –40 °C to +125 °C; guarantees deterministic latency for real-time ECU firmware. |
| Operating Current (ICC) | 90 mA max at fMAX = 50 MHz (20 ns cycle); supports sustained burst reads in safety-critical control loops. |
| Standby Current (ISB2) | 15 mA max at VCC = 3.3 V, TA = 125 °C, CMOS input conditions; enables low-power sleep modes in always-on vehicle networks. |
| I/O Voltage Compatibility | TTL-compatible inputs (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and outputs (VOH ≥ 2.4 V @ –4 mA, VOL ≤ 0.4 V @ 8 mA); interoperable with 3.3 V microcontrollers without level shifters. |
| Thermal Resistance (θJA) | 42.96 °C/W for 44-pin TSOP II package; enables reliable operation up to 125 °C ambient with standard PCB copper pour. |
Pinout & Package
Package: 44-pin 400-mil SOJ (Small Outline J-Lead), RoHS-compliant, lead-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus selecting one of 262,144 memory locations; supports full 256K word addressing. |
| I/O0–I/O7 | Bidirectional Data (Low Byte) | 8-bit data path enabled only when BLE = LOW; allows partial writes to lower byte without affecting upper byte. |
| I/O8–I/O15 | Bidirectional Data (High Byte) | 8-bit data path enabled only when BHE = LOW; enables independent high-byte updates in mixed-data-width systems. |
| CE | Chip Enable (Active LOW) | Global device select; forces all I/O into high-Z when HIGH, enabling memory expansion via chip-select decoding. |
| OE | Output Enable (Active LOW) | Controls output driver enable; must be LOW for read data to appear on I/O pins; tri-states outputs when HIGH. |
| WE | Write Enable (Active LOW) | Initiates write cycle when CE and WE both LOW; combined with BHE/BLE to define write granularity. |
| BHE, BLE | Byte Write Enable (Active LOW) | Independent controls for high/low byte; eliminates need for external byte masking logic in 16-bit bus systems. |
| VCC | Power Supply | 3.3 V ±10% supply; powers core logic and I/O buffers; two dedicated pins reduce IR drop and noise coupling. |
| VSS | Ground | System ground reference; two dedicated pins improve return path integrity and reduce ground bounce. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive-E Temperature Range | –40 °C to +125 °C operation with full electrical specification compliance; qualified per AEC-Q100 Grade 1 for engine bay placement. |
| Dual-Byte Write Architecture | BHE and BLE inputs allow independent 8-bit writes to upper/lower data bytes; eliminates software overhead of read-modify-write for partial updates. |
| Automatic CE Power-Down | Reduces ICC to 15 mA (max) when CE is HIGH and inputs are stable; simplifies power management in battery-sensitive telematics modules. |
| TTL-Compatible I/O | Direct interface with 3.3 V microcontrollers (e.g., Infineon TC2xx, NXP S32K) without level-shifting circuitry; lowers BOM count and layout complexity. |
| Pb-Free Packaging Options | Available in RoHS-compliant 44-pin SOJ and TSOP II packages; meets automotive environmental compliance requirements (ELV, REACH). |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance System (ADAS) Sensor Hub |
|---|---|
Use Scenario: Real-time storage of sensor fusion data (wheel speed, throttle position, camshaft timing) during combustion cycle execution. IC Role / Device Role / Timing Role: Primary working memory for deterministic interrupt service routines with sub-20 ns access guarantee. Use Value: Eliminates cache misses in time-triggered architectures; supports ASIL-B compliant control loop timing budgets. |
Use Scenario: Buffering raw pixel streams from radar and camera sensors before preprocessing in SoC-based domain controllers. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer with byte-selectable writes for heterogeneous sensor data alignment. Use Value: Enables concurrent ingestion of 8-bit radar samples and 12-bit image data without bus arbitration delays. |
| Body Control Module (BCM) | Electric Power Steering (EPS) Controller |
Use Scenario: Storing dynamic configuration tables (lighting profiles, door lock states, HVAC schedules) updated over CAN FD. IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding runtime parameters; accessed via SPI-to-parallel bridge ICs. Use Value: Provides fast parameter lookup during wake-up sequences while maintaining AEC-Q100 qualification. |
Use Scenario: Holding torque compensation lookup tables and motor phase current history for closed-loop steering assist algorithms. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory synchronized to 10 kHz motor control PWM cycles. Use Value: Ensures <20 ns memory latency does not degrade torque response time in ISO 26262 ASIL-C systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-20BLI | 20 ns tAA, but rated only to +85 °C (Industrial grade); no AEC-Q100 qualification; uses 48-ball FBGA only. | Limited to cabin electronics (infotainment, cluster), not under-hood use; lacks automotive reliability testing. | Select only for cost-sensitive non-safety applications where ambient stays below 85 °C. |
| MT45W8MW16BGX-20D:J | 20 ns tAA, +105 °C max operating temperature; JEDEC-standard LPDDR2 interface, not parallel SRAM; requires controller-side protocol handling. | Requires DDR PHY and command scheduler; unsuitable for simple microcontroller parallel bus interfaces. | Choose only when migrating to DDR-based memory subsystems with compatible SoC support. |
Compared with IS61WV25616EDBLL-20BLI and MT45W8MW16BGX-20D:J, the CY7C1041CV33-20VXE uniquely delivers AEC-Q100 Grade 1 qualification, true parallel bus simplicity, and guaranteed 125 °C operation - making it the sole choice for ASIL-B/C powertrain and chassis control memory buffering.
Availability
CY7C1041CV33-20VXE is available at Aetrix Electronics and suitable for engine control units, ADAS sensor hubs, and electric power steering controllers requiring stable component supply across extended automotive temperature ranges and long production lifecycles.
Supply support for CY7C1041CV33-20VXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and qualification infrastructure.
The CY7C1041CV33 belongs to Cypress's automotive-qualified parallel SRAM product line, engineered specifically for deterministic, low-latency data buffering in safety-critical vehicle subsystems operating beyond 105 °C.
FAQ
Is CY7C1041CV33-20VXE pin-compatible with CY7C1041BNV33?
Yes, CY7C1041CV33-20VXE is pin- and function-compatible with CY7C1041BNV33 per the datasheet's Feature section. Both share identical 44-pin SOJ/TSOP II pinouts, address/data/control signal assignments, and byte-enable logic. However, the CV33 variant adds Automotive-E qualification (–40 °C to +125 °C) and tighter ISB2 standby current specs, while the BNV33 is commercial-grade.
What is the maximum clock frequency supported for continuous read/write cycling?
The CY7C1041CV33-20VXE supports a maximum read/write cycle time (tRC) of 20 ns, corresponding to 50 MHz maximum sustained operation. This assumes valid setup/hold timing for address, CE, OE, WE, and BHE/BLE signals per the switching characteristics table on page 7 of the datasheet.
Does this SRAM require an external refresh controller?
No. The CY7C1041CV33-20VXE is a static RAM (SRAM) and contains no capacitive storage cells; it retains data indefinitely as long as VCC is applied and does not require periodic refresh cycles. This eliminates refresh overhead and timing uncertainty present in DRAM-based systems.
Can BHE and BLE be asserted simultaneously for full 16-bit writes?
Yes. Asserting both BHE and BLE LOW while CE and WE are LOW enables simultaneous writing of 16-bit data across I/O0–I/O15. The device's internal logic routes the full data bus to the selected memory location without conflict, supporting native 16-bit word writes in microcontroller systems.
CY7C1041CV33-20VXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1041CV33-20VXE FAQ
1.How can I place an order for CY7C1041CV33-20VXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041CV33-20VXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041CV33-20VXE reliable?
The price and inventory of CY7C1041CV33-20VXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041CV33-20VXE is usually 5 days.
3.What payment methods are accepted for CY7C1041CV33-20VXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041CV33-20VXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041CV33-20VXE?
CY7C1041CV33-20VXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041CV33-20VXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041CV33-20VXE?
For technical support, including CY7C1041CV33-20VXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041CV33-20VXE requirements.
6.How does Aetrix verify that CY7C1041CV33-20VXE is sourced from the original manufacturer or authorized distributors?
All CY7C1041CV33-20VXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041CV33-20VXE meets industry standards.
7.What is the process for return or replacement of CY7C1041CV33-20VXE?
All CY7C1041CV33-20VXE units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041CV33-20VXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041CV33-20VXE part is unused and in its original packaging.
Return procedure for CY7C1041CV33-20VXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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