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Infineon Technologies CY7C1041CV33-20VXET
- Part No.:
- CY7C1041CV33-20VXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-BSOJ (0.400", 10.16mm Width)
- Datasheet:
-
CY7C1041CV33-20VXET.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,775
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Product details
Overview
CY7C1041CV33-20VXET from Cypress Semiconductor is an automotive-grade 4-Mbit (256 K × 16) CMOS static RAM with 20 ns maximum access time, TTL-compatible I/O, and dual-byte write enable (BHE/BLE) for flexible data bus control. It operates across –40 °C to +125 °C (Automotive-E grade), supports automatic CE power-down (ISB2 ≤ 15 mA), and delivers 432 mW max active power in 44-pin TSOP II package - used in engine control units, ADAS sensor buffers, and infotainment memory expansion.
For engineers reviewing the CY7C1041CV33-20VXET datasheet, CY7C1041CV33-20VXET pinout, CY7C1041CV33-20VXET application, or CY7C1041CV33-20VXET equivalent, key selection criteria include byte-select timing (tDBE ≤ 8 ns), high-temperature standby current (ISB2 = 15 mA at 125 °C), CE-controlled power-down behavior, and compatibility with 3.3 V ±10% supply rails in safety-critical automotive systems.
Technical Context
This SRAM implements a 256K × 16-bit array with independent byte-wide write control via BHE (I/O15–I/O8) and BLE (I/O7–I/O0), enabling partial-word writes without read-modify-write cycles. Address decoding uses full 18-bit addressing (A0–A17) and supports asynchronous read/write with CE, OE, and WE as primary control inputs.
It features automatic tri-state output control during deselection (CE HIGH), write (WE LOW), or disabled byte enables (BHE/BLE HIGH), with guaranteed high-impedance transitions (tHZOE ≤ 8 ns, tHZCE ≤ 8 ns) under Automotive-E conditions. Power management includes two standby modes: ISB1 (TTL input thresholds) and ISB2 (CMOS thresholds), both validated at 125 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256 K × 16 bits (4 Mbit total); enables 16-bit data bus interface without external multiplexing. |
| Access Time (tAA) | 20 ns max at –40 °C to +125 °C; defines minimum address-to-valid-data delay in read cycles. |
| Supply Voltage | 3.3 V ±10%; ensures compatibility with standard automotive 3.3 V power domains and LDO outputs. |
| Standby Current (ISB2) | 15 mA max at 125 °C; reflects low-power retention capability during ECU sleep modes. |
| Output Drive | VOL ≤ 0.4 V at IOL = 8 mA; guarantees robust logic LOW under heavy capacitive loading (e.g., multi-drop buses). |
| Input Leakage | ±20 µA max over temperature; maintains signal integrity in noisy automotive environments with floating controls. |
| Thermal Resistance (θJA) | 42.96 °C/W (TSOP II); enables thermal modeling for under-hood placement with ≤ 85 °C ambient rise at 432 mW. |
Pinout & Package
Package: 44-pin TSOP II (400 mil), RoHS-compliant, body size 18.4 mm × 10.16 mm × 1.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus; selects one of 262,144 memory locations; requires stable setup/hold relative to CE/OE. |
| I/O0–I/O7 | Bidirectional Data (Low Byte) | 8-bit data path controlled by BLE; tri-stated when BLE HIGH or CE HIGH or OE HIGH. |
| I/O8–I/O15 | Bidirectional Data (High Byte) | 8-bit data path controlled by BHE; independent enable allows mixed-byte writes in same cycle. |
| CE | Chip Enable (Active LOW) | Primary device select; initiates automatic power-down when HIGH and all inputs meet CMOS thresholds. |
| OE | Output Enable (Active LOW) | Controls I/O direction; LOW enables output drivers, HIGH forces tri-state regardless of CE/WE state. |
| WE | Write Enable (Active LOW) | Asserts write mode; must be LOW with CE LOW and BHE/BLE LOW to store data; HIGH enables read. |
| BHE / BLE | Byte Write Enable (Active LOW) | Independent gating of high/low byte paths; enables 8-bit or 16-bit writes without external logic. |
| VCC | Power Supply | 3.3 V ±10% supply; two pins (pins 11, 33) reduce IR drop and improve noise immunity on PCB. |
| VSS | Ground | System ground reference; two pins (pins 12, 34) provide low-inductance return path for I/O switching. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive Temperature Range | Qualified per AEC-Q100 Grade 1 (–40 °C to +125 °C), supporting under-hood ECU deployment. |
| Dual-Byte Write Architecture | Separate BHE/BLE controls eliminate need for external byte-masking logic in 16-bit microcontroller interfaces. |
| Automatic CE Power-Down | Reduces ICC to 15 mA (ISB2) at 125 °C without external control signals - critical for low-quiescent ECU modules. |
| TTL-Compatible I/O Levels | VIH = 2.0 V min, VOL = 0.4 V max at 8 mA - ensures interoperability with legacy 3.3 V microcontrollers and FPGAs. |
| High-Z Output Control | tHZOE ≤ 8 ns and tHZCE ≤ 8 ns guarantee fast bus release for multi-SRAM arbitration in shared memory systems. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Real-time storage of sensor fusion data (wheel speed, yaw rate, brake pressure) during transient engine events. IC Role / Device Role: High-reliability, low-latency scratchpad memory interfaced directly to 16-bit MCU with burst read capability. Use Value: 20 ns tAA and byte-select write enable deterministic response within 100 µs control loops under 125 °C ambient. |
Use Scenario: Buffering raw camera frame data between image sensor and SoC preprocessor in surround-view systems. IC Role / Device Role: Offload FIFO buffer for parallel 16-bit pixel streams, reducing SoC DMA overhead. Use Value: Dual-byte write (BHE/BLE) allows simultaneous capture of left/right camera pixels into contiguous memory regions. |
| Infotainment Head Unit | Body Control Module (BCM) |
|
Use Scenario: Storing UI state variables, audio codec parameters, and navigation cache during system suspend/resume cycles. IC Role / Device Role: Non-volatile shadow RAM backed by backup battery; retains configuration across ignition cycles. Use Value: ISB2 = 15 mA at 125 °C enables >10-year data retention in hot-dock environments with minimal backup current draw. |
Use Scenario: Logging diagnostic trouble codes (DTCs) and actuator command history for OBD-II compliance reporting. IC Role / Device Role: Write-once, read-many logging buffer with hardware write protection via CE/OE sequencing. Use Value: Automatic tri-state on CE HIGH prevents bus contention during CAN/LIN communication bursts in shared harnesses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-20BLI | 256 K × 16, 20 ns, –40 °C to +85 °C only; no Automotive-E qualification; lower ISB2 (5 mA) but no 125 °C validation. | Limited to cabin modules (head unit, HVAC); unsuitable for powertrain or radar modules requiring Grade 1 operation. | Select only if ambient stays ≤ 85 °C and AEC-Q100 Grade 0 suffices; verify thermal derating in enclosure simulation. |
| AS6C4008-20TIN | 256 K × 16, 20 ns, –40 °C to +125 °C; lacks BHE/BLE - single 16-bit write only; higher tHZOE (12 ns) limits bus arbitration speed. | Acceptable for simple MCU data buffers where byte masking is handled in firmware; not viable for high-speed sensor streaming. | Choose when cost is prioritized over flexibility; confirm software can tolerate full-word writes and slower output release. |
Compared with IS61WV25616EDBLL-20BLI and AS6C4008-20TIN, CY7C1041CV33-20VXET uniquely combines AEC-Q100 Grade 1 qualification, dual-byte write control, and sub-10 ns high-Z transitions - making it the only option for time-deterministic, high-temperature automotive memory subsystems.
Availability
CY7C1041CV33-20VXET is available at Aetrix Electronics and suitable for engine control units, ADAS sensor buffers, and infotainment head units requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY7C1041CV33-20VXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and AEC-Q100 validation infrastructure.
CY7C1041CV33 belongs to Cypress's automotive SRAM product line, engineered specifically for real-time, safety-aware memory buffering in powertrain, chassis, and ADAS subsystems operating beyond 105 °C.
FAQ
Is CY7C1041CV33-20VXET qualified to AEC-Q100 Grade 1?
Yes. The CY7C1041CV33-20VXET is fully qualified to AEC-Q100 Grade 1 (–40 °C to +125 °C), with test reports covering HTOL, TC, UHAST, and ESD per Rev. *C datasheet. It is certified for use in engine control, transmission, and radar modules where junction temperatures exceed 105 °C.
What is the difference between ISB1 and ISB2 standby current specifications?
ISB1 applies when inputs meet TTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and CE is HIGH; ISB2 applies under stricter CMOS thresholds (VIH ≥ VCC – 0.3 V, VIL ≤ 0.3 V). ISB2 = 15 mA max at 125 °C reflects worst-case leakage during deep-sleep states in modern ECUs using CMOS-level wake-up signaling.
Can CY7C1041CV33-20VXET operate with a 3.0 V supply?
No. The device requires VCC = 3.3 V ±10%, i.e., 2.97 V to 3.63 V. Operation below 2.97 V violates the Absolute Maximum Rating for VIH (2.0 V min) and risks incorrect address latching or data corruption during reads/writes, as confirmed in Section "Operating Range" of the datasheet.
Does the 44-pin TSOP II package support lead-free solder reflow?
Yes. The CY7C1041CV33-20VXET in 44-pin TSOP II (VXET suffix) is Pb-free and qualified for JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C for 30 seconds. The package uses matte tin terminations compatible with standard SnAgCu solder paste.
CY7C1041CV33-20VXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-BSOJ (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-SOJ
CY7C1041CV33-20VXET FAQ
1.How can I place an order for CY7C1041CV33-20VXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041CV33-20VXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041CV33-20VXET reliable?
The price and inventory of CY7C1041CV33-20VXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041CV33-20VXET is usually 5 days.
3.What payment methods are accepted for CY7C1041CV33-20VXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041CV33-20VXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041CV33-20VXET?
CY7C1041CV33-20VXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041CV33-20VXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041CV33-20VXET?
For technical support, including CY7C1041CV33-20VXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041CV33-20VXET requirements.
6.How does Aetrix verify that CY7C1041CV33-20VXET is sourced from the original manufacturer or authorized distributors?
All CY7C1041CV33-20VXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041CV33-20VXET meets industry standards.
7.What is the process for return or replacement of CY7C1041CV33-20VXET?
All CY7C1041CV33-20VXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041CV33-20VXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041CV33-20VXET part is unused and in its original packaging.
Return procedure for CY7C1041CV33-20VXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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