Infineon Technologies CY7C1041CV33-20ZSXA

Overview

CY7C1041CV33-20ZSXA from Cypress Semiconductor is an automotive-grade 4-Mbit (256 K × 16) CMOS static RAM with 20 ns access time, TTL-compatible I/O, and dual-byte write control via BHE/BLE. It operates across –40 °C to +125 °C (Automotive-E grade), supports automatic CE power-down (ISB2 = 15 mA max), and is packaged in a 44-pin TSOP II. Used for real-time data buffering in engine control units and ADAS sensor fusion modules.

For engineers reviewing the CY7C1041CV33-20ZSXA datasheet, CY7C1041CV33-20ZSXA pinout, CY7C1041CV33-20ZSXA application, or CY7C1041CV33-20ZSXA equivalent, key selection criteria include tAA = 20 ns read timing, byte-selectable 16-bit I/O architecture, CE/OE/WE control logic compatibility, and Automotive-E temperature qualification per AEC-Q100.

Technical Context

This SRAM implements a synchronous, non-volatile-access memory array organized as 262,144 × 16 bits with full address decoding (A0–A17), independent high- and low-byte enables (BHE/BLE), and tri-state I/O drivers controlled by OE, CE, and WE. All control inputs are active-low and TTL-compatible.

It features two distinct power-down modes: ISB1 (TTL input thresholds, 45 mA max at 125 °C) and ISB2 (CMOS thresholds, 15 mA max), triggered automatically when CE is HIGH and all inputs are valid. Output leakage (IOZ) remains ≤ ±20 µA over full temperature range.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (400 mil), RoHS-compliant, surface-mount. Pin pitch: 0.8 mm. Body dimensions: 18.4 mm × 10.16 mm × 1.2 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-20TQLI and AS6C4008-20TIN, CY7C1041CV33-20ZSXA uniquely delivers AEC-Q100 Grade 1 compliance, true dual-byte write capability, and guaranteed 20 ns performance at 125 °C-making it the only option for safety-critical automotive memory subsystems requiring deterministic timing and thermal resilience.

Availability

CY7C1041CV33-20ZSXA is available at Aetrix Electronics and suitable for engine control units, ADAS sensor fusion modules, instrument cluster controllers, and telematics control units requiring stable component supply across extended automotive temperature ranges and long production lifecycles.

Supply support for CY7C1041CV33-20ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and quality systems certified to ISO/TS 16949.

CY7C1041CV33 belongs to Cypress's automotive SRAM product line, engineered specifically for deterministic, low-latency data buffering in safety-critical electronic control modules where refresh-free operation and AEC-Q100 compliance are mandatory.

FAQ

Is CY7C1041CV33-20ZSXA pin-compatible with CY7C1041BNV33?

Yes, CY7C1041CV33-20ZSXA is pin- and function-compatible with CY7C1041BNV33 per the datasheet's Selection Guide and Pin Definitions section. Both share identical 44-pin TSOP II pinout, address/data/control signal mapping, and byte-enable functionality. However, CY7C1041CV33-20ZSXA adds Automotive-E temperature qualification and tighter AC timing specifications at 125 °C.

What is the maximum clock frequency supported for continuous read cycles?

The device supports a maximum read cycle frequency of 50 MHz, derived from its 20 ns read cycle time (tRC = 20 ns). This assumes proper setup/hold timing compliance, VCC = 3.3 V ±10%, and ambient temperature within –40 °C to +125 °C. No internal clock is required-the timing is asynchronous and controlled solely by CE, OE, and address stability.

Does CY7C1041CV33-20ZSXA require external pull-up resistors on control lines?

No external pull-ups are required on CE, OE, WE, BHE, or BLE. The device specifies VIH(min) = 2.0 V and VIL(max) = 0.8 V at VCC = 3.3 V, ensuring robust noise margins with standard CMOS or TTL drive. Internal input clamps and Schmitt-trigger-like hysteresis (per datasheet Figure 3 test conditions) eliminate need for external biasing in automotive harness environments.

Can CY7C1041CV33-20ZSXA be used in write-cycle overlap scenarios (e.g., CE and WE asserted simultaneously with address change)?

Yes-the device supports overlapping control transitions as defined in the Truth Table (page 11) and Switching Waveforms (Figures 4–5). Write initiation requires CE and WE both LOW; address changes during active write are ignored until the next cycle. The tHA (address hold after write end) is 0 ns, confirming no hold requirement-enabling pipelined write sequences in high-throughput controllers.