Infineon Technologies CY7C1041CV33-20ZSXET

Overview

CY7C1041CV33-20ZSXET from Cypress Semiconductor is an automotive-grade 4-Mbit (256 K × 16) CMOS static RAM with 20 ns maximum access time, TTL-compatible I/O, and dual-byte write control via BHE/BLE pins. It operates across –40 °C to +125 °C (Automotive-E grade), supports automatic CE power-down (ISB2 ≤ 15 mA), and is packaged in a 48-ball FBGA. It serves as main data buffer in engine control units requiring deterministic read/write timing and high-temperature reliability.

For engineers reviewing the CY7C1041CV33-20ZSXET datasheet, CY7C1041CV33-20ZSXET pinout, CY7C1041CV33-20ZSXET application, or CY7C1041CV33-20ZSXET equivalent, this page delivers verified timing parameters (tAA = 20 ns, tRC = 20 ns), byte-select logic behavior, thermal resistance (θJA = 38.15 °C/W), and FBGA pin mapping per official Rev. *C documentation.

Technical Context

This SRAM implements a synchronous, non-volatile-access memory array organized as 262,144 × 16 bits, with independent byte enable control for I/O0–I/O7 (BLE) and I/O8–I/O15 (BHE). All address lines (A0–A17) decode row/column selection without internal refresh circuitry.

Read operations require CE and OE asserted low while WE remains high; writes require CE and WE low with active BLE or BHE. Output tri-state is enforced when CE is high, OE is high, or during write cycles - ensuring clean bus isolation in multiplexed automotive subsystems.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), JEDEC MO-246AC compliant, 9 mm × 8 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed automotive SRAM applications.

Compared with IS61WV25616EDBLL-20BLI and AS6C4008-20TIN, CY7C1041CV33-20ZSXET uniquely combines AEC-Q100 Grade 1 qualification, 16-bit bus width, FBGA packaging, and dual-byte write control - making it the only drop-in solution for legacy 16-bit automotive MCU platforms requiring extended temperature operation.

Availability

CY7C1041CV33-20ZSXET is available at Aetrix Electronics and suitable for engine control units, ADAS camera modules, electric power steering systems, and V2X communication modules requiring stable component supply across automotive production lifecycles.

Supply support for CY7C1041CV33-20ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies since 2020) designs high-reliability memory and microcontroller solutions for automotive, industrial, and IoT applications, with global manufacturing and qualification infrastructure.

CY7C1041CV33 belongs to Cypress's automotive SRAM product line, engineered specifically for deterministic timing, extended temperature resilience, and seamless integration with 16-bit TriCore and Power Architecture MCUs in safety-critical vehicle subsystems.

FAQ

Is CY7C1041CV33-20ZSXET pin-compatible with CY7C1041BNV33?

Yes, CY7C1041CV33-20ZSXET is pin- and function-compatible with CY7C1041BNV33 per the datasheet's "Pin and function compatible" statement on page 1. Both share identical 48-ball FBGA pinout, address/data/control signal assignments, and timing behavior - enabling direct replacement in existing designs without layout changes.

What is the maximum operating current during active read cycles at 125 °C?

Per Electrical Characteristics table on page 5, maximum ICC for Automotive-E grade at VCC = 3.63 V and f = fMAX is 90 mA. This value is measured under worst-case conditions (TA = +125 °C, VCC = max, tRC = 20 ns), and represents total supply current including dynamic switching losses.

Does CY7C1041CV33-20ZSXET support asynchronous burst reads?

No. The CY7C1041CV33-20ZSXET is a static RAM with no internal burst counter or sequential addressing logic. All accesses are random-address, single-word operations controlled explicitly by CE, OE, and address bus transitions - consistent with classic SRAM architecture described in the Functional Description section.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes. The datasheet Truth Table (page 11) confirms that asserting both BHE and BLE LOW while CE and WE are LOW enables concurrent writing of I/O0–I/O7 and I/O8–I/O15 into the same memory location - achieving full 16-bit parallel writes without requiring two separate cycles.