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Infineon Technologies CY7C1041D-10VXIT

Part No.:
CY7C1041D-10VXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1041D-10VXIT.pdf
Description:
IC SRAM 4MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,658

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Product details

Overview

CY7C1041D-10VXIT from Cypress Semiconductor is a 4-Mbit (256 K × 16) high-speed CMOS static RAM with 10 ns access time, TTL-compatible I/O, and automatic CE power-down. It operates at 5 V ±0.5 V over –40 °C to +85 °C, supports byte-wide writes via BHE/ BLE, and delivers 90 mA active current and 10 mA CMOS standby current. It is used in industrial control systems requiring deterministic memory access and low-power retention.

For engineers reviewing the CY7C1041D-10VXIT datasheet, CY7C1041D-10VXIT pinout, CY7C1041D-10VXIT application, or CY7C1041D-10VXIT equivalent, key selection criteria include tAA = 10 ns read timing, ISB2 = 10 mA CMOS standby current, 2.0 V data retention capability, 44-pin TSOP II package compatibility, and byte-enable-controlled 16-bit I/O partitioning.

Technical Context

The CY7C1041D-10VXIT implements a synchronous, non-volatile-retentive SRAM core with dual-byte write enable (BHE/BLE) and full TTL-level interface compliance. Its address space spans A0–A17 (18-bit), supporting 256K word addressing, and features independent output enable (OE) and chip enable (CE) with automatic power-down when CE is deasserted.

Read operations require CE and OE LOW with WE HIGH; writes require CE and WE LOW, with data latched based on BHE/BLE states. All I/O pins enter high-impedance state during deselection, OE HIGH, or write cycles - ensuring clean bus sharing in multi-peripheral systems without external isolation.

Key Specifications

Parameter Value and Actual Design Meaning
tAA 10 ns maximum address-to-data valid delay - guarantees deterministic read latency for real-time microcontroller interfaces.
ICC (active) 90 mA at 10 ns - defines peak supply current under full-speed operation at industrial temperature range.
ISB2 (standby) 10 mA CMOS-mode standby current - enables low-power sleep states while preserving memory contents.
VDR 2.0 V minimum data retention voltage - allows memory hold during brown-out or controlled power-down sequences.
Organization 256 K × 16-bit - provides 4-Mbit capacity with native 16-bit data bus alignment for 16/32-bit processors.
Interface TTL-compatible inputs/outputs - ensures direct connection to legacy 5 V microcontrollers without level-shifting.
Package 44-pin TSOP II (0.400″ body width) - surface-mount form factor with center power/ground pinout for improved signal integrity.

Pinout & Package

The CY7C1041D-10VXIT is housed in a 44-pin TSOP II package (0.400″ body width) with center power/ground pinout architecture, optimized for thermal dissipation and signal routing in dense PCB layouts.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus accepting 256K-word memory locations; compatible with standard 16/32-bit processor address buses.
I/O0–I/O7 Data Bus (Low Byte) Bi-directional 8-bit data path enabled by BLE; supports isolated low-byte writes and reads.
I/O8–I/O15 Data Bus (High Byte) Bi-directional 8-bit data path enabled by BHE; enables independent high-byte memory access.
CE Chip Enable Active-low global select; forces device into automatic low-power mode (ISB2 = 10 mA) when HIGH.
OE Output Enable Active-low control for output drivers; disables outputs (high-Z) independently of CE or WE state.
WE Write Enable Active-low write strobe; initiates write cycle only when CE is also LOW; controls data latch timing.
BLE / BHE Byte Low/High Enable Independent active-low enables for low/high byte paths; enables 8-bit granularity in 16-bit memory systems.
VCC / VSS Power / Ground Dual VCC (pins 16, 37) and dual VSS (pins 15, 36) placed centrally per TSOP II layout - reduces IR drop and improves noise immunity.

Key Features

Feature Design Value
Pin-and function-compatible with CY7C1041B Enables drop-in replacement in existing designs without PCB or firmware changes.
Automatic CE power-down Reduces standby current to 10 mA (CMOS mode) without requiring external control logic or sleep commands.
Byte-selectable 16-bit I/O Supports partial-word writes using BHE/BLE - eliminates need for external byte masking logic in 8-bit peripheral interfaces.
2.0 V data retention Preserves memory contents during undervoltage events down to 2.0 V - critical for graceful shutdown in industrial power systems.
TTL-compatible I/O levels Direct interfacing with legacy 5 V microcontrollers (e.g., Intel 80C186, Motorola 68000) without level translators.

Applications

Industrial PLC Memory Buffer Automotive Engine Control Unit (ECU) Data Log

Use Scenario: Stores real-time sensor history and control state variables in programmable logic controllers during cyclic scan execution.

IC Role / Device Role / Timing Role: High-reliability, low-latency SRAM acting as scratchpad memory for deterministic 10 ns read/write cycles synchronized to CPU clock.

Use Value: Enables zero-wait-state memory access for time-critical ladder logic execution and eliminates bus arbitration delays in multi-module backplanes.

Use Scenario: Captures transient engine parameters (RPM, throttle position, O2 sensor readings) during fault conditions for post-event diagnostics.

IC Role / Device Role / Timing Role: Non-volatile-retentive buffer retaining last 256K samples even during ignition-off power collapse down to 2.0 V.

Use Value: Provides complete pre-failure data capture without battery-backed SRAM or external EEPROM overhead.

Medical Imaging Frame Buffer Avionics Display System Cache

Use Scenario: Temporarily stores digitized X-ray or ultrasound frames before compression and transmission to PACS servers.

IC Role / Device Role / Timing Role: 16-bit wide, burst-capable SRAM interfaced directly to image acquisition ASICs via parallel bus.

Use Value: Sustains 100 MHz sustained read/write throughput (tRC = 10 ns) required for real-time 1080p@30fps video streaming pipelines.

Use Scenario: Caches navigation map tiles and flight parameter overlays in certified cockpit display units with strict DO-254 timing constraints.

IC Role / Device Role / Timing Role: Deterministic-access memory subsystem meeting <10 ns worst-case read latency requirements for safety-critical rendering.

Use Value: Guarantees pixel-perfect frame updates within hard real-time deadlines without software-managed caching penalties.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS6C4008-10TIN 4-Mbit (256K × 16), 10 ns, 3.3 V only, CMOS I/O - not TTL-compatible. Requires level-shifting for 5 V microcontrollers; unsuitable for legacy 5 V systems without redesign. Select only if migrating to 3.3 V system architecture and verifying VIH/VIL margins against host controller.
IS61LV25616AL-10TLI 4-Mbit (256K × 16), 10 ns, 3.3 V supply, TTL-compatible I/O via internal translation - supports 5 V tolerant inputs. Accepts 5 V inputs but requires 3.3 V VCC; output swing limited to 3.3 V, necessitating receiver-side level adaptation. Prefer when upgrading from 5 V to mixed-voltage designs where input tolerance is critical but output drive can be adapted.

Compared with AS6C4008-10TIN and IS61LV25616AL-10TLI, the CY7C1041D-10VXIT uniquely supports native 5 V TTL operation with 2.0 V data retention - making it irreplaceable in brown-out-resilient industrial 5 V systems where voltage scaling is not permitted.

Availability

CY7C1041D-10VXIT is available at Aetrix Electronics and suitable for industrial PLCs, automotive ECUs, medical imaging subsystems, and avionics display caches requiring stable component supply across extended product lifecycles.

Supply support for CY7C1041D-10VXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, PSoC, and USB solutions for industrial, automotive, and consumer applications.

The CY7C1041D belongs to Cypress's high-speed parallel SRAM product line, designed specifically for legacy 5 V microprocessor and DSP memory expansion where deterministic timing, TTL compatibility, and robust data retention are mandatory.

FAQ

Is CY7C1041D-10VXIT compatible with 3.3 V microcontrollers?

No. The CY7C1041D-10VXIT is specified for 5 V ±0.5 V operation and features TTL-compatible I/O thresholds (VIH = 2.0 V min, VOH = 2.4 V min). Interfacing with 3.3 V controllers requires level-shifting circuitry on all address, data, and control lines to avoid violating input voltage limits or degrading noise margins.

What is the significance of the "VXI" suffix in CY7C1041D-10VXIT?

The "VXI" suffix denotes a 44-pin TSOP II package (V), industrial temperature range (–40 °C to +85 °C) (X), and lead-free (RoHS-compliant) finish (I). It confirms the device meets JEDEC MO-141AC standards and is qualified for surface-mount reflow per IPC/JEDEC J-STD-020.

Can CY7C1041D-10VXIT operate with CE and OE asserted simultaneously during a write?

No. During write operations, OE must be held HIGH to disable outputs and prevent bus contention. The truth table specifies that valid writes occur only when CE and WE are LOW while OE is HIGH. Asserting OE LOW during a write violates timing and may cause undefined data bus states or increased ICC.

Does CY7C1041D-10VXIT support asynchronous burst reads?

No. The CY7C1041D-10VXIT is a static RAM with no internal burst counter or sequential address generation. Each read requires a full address setup (tAA = 10 ns) and CE/OE assertion; burst access must be implemented externally via address sequencing logic or processor DMA with individual address increments.

CY7C1041D-10VXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

CY7C1041D-10VXIT FAQ

1.How can I place an order for CY7C1041D-10VXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1041D-10VXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1041D-10VXIT reliable?

The price and inventory of CY7C1041D-10VXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041D-10VXIT is usually 5 days.

3.What payment methods are accepted for CY7C1041D-10VXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041D-10VXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1041D-10VXIT?

CY7C1041D-10VXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1041D-10VXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1041D-10VXIT?

For technical support, including CY7C1041D-10VXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041D-10VXIT requirements.

6.How does Aetrix verify that CY7C1041D-10VXIT is sourced from the original manufacturer or authorized distributors?

All CY7C1041D-10VXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041D-10VXIT meets industry standards.

7.What is the process for return or replacement of CY7C1041D-10VXIT?

All CY7C1041D-10VXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041D-10VXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1041D-10VXIT part is unused and in its original packaging.

Return procedure for CY7C1041D-10VXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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