Infineon Technologies CY7C1041G-10VXI

Overview

CY7C1041G-10VXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time across 4.5–5.5 V supply, featuring TTL-compatible I/Os, ERR pin omission, and industrial-grade temperature range (–40 °C to +85 °C). It serves as a high-reliability memory buffer in mission-critical industrial controllers requiring data integrity without automatic write-back.

For engineers reviewing the CY7C1041G-10VXI datasheet, CY7C1041G-10VXI pinout, CY7C1041G-10VXI application, or CY7C1041G-10VXI equivalent, this page delivers verified package mapping (48-ball VFBGA, BVXI), ECC functional behavior, byte-enable control logic, DC/AC timing boundaries, and validated alternatives for memory subsystem design.

Technical Context

This SRAM implements a synchronous, single-chip-enable architecture with dedicated BHE/ BLE inputs enabling independent upper- and lower-byte writes to the 16-bit data bus. Its ECC engine performs real-time single-bit error detection and correction during read cycles but does not trigger automatic write-back - correction occurs only in the sense amplifier path.

The device supports three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the -10VXI variant is specified for 4.5–5.5 V operation with t_AA = 10 ns, ICC = 38 mA typical, ISB2 = 6 mA typical, and 1.0-V data retention. All I/Os enter high-impedance state when CE is HIGH or OE/BLE/BHE are deasserted.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm, JEDEC-compliant BVXI footprint (no ERR pin; I/O[7:0] and I/O[15:8] arranged per Figure 1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC-enabled SRAM applications.

Compared with AS7C34096B-10TIN and IS61WV25616EDBLL-10MLI, CY7C1041G-10VXI uniquely integrates real-time single-bit correction without external components or software overhead, operates across 4.5–5.5 V rails, and delivers proven <0.1 FIT/Mb reliability - making it the only drop-in solution for legacy 5 V industrial and transportation systems requiring certified data integrity.

Availability

CY7C1041G-10VXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, railway signaling data caches, medical imaging frame stores, and avionics display buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1041G-10VXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and aerospace markets.

CY7C1041G-10VXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-reliability, ECC-protected memory applications in harsh-environment control systems where data integrity cannot be compromised.

FAQ

Does CY7C1041G-10VXI support automatic error write-back after correction?

No. The device corrects single-bit errors in the sense amplifier path during read operations but does not perform automatic write-back to the memory array. Corrected data appears on the I/O bus, but the original corrupted bit remains uncorrected in the cell unless rewritten by the host system. This behavior is explicitly documented in Note 1 of the datasheet.

What is the exact package footprint and ball pitch for CY7C1041G-10VXI?

CY7C1041G-10VXI uses a 48-ball VFBGA package with JEDEC-compliant BVXI mechanical outline: 6.0 mm × 8.0 mm body size, 0.8 mm ball pitch, 0.3 mm ball diameter, and 1.0 mm maximum height. Pinout matches Figure 1 in datasheet 001-91368 Rev. *N, with no ERR pin and swapped I/O[7:0]/I/O[15:8] versus BVJXI variants.

Can CY7C1041G-10VXI operate reliably at 4.5 V with 10 ns timing?

Yes. The -10VXI speed grade is fully characterized for 4.5–5.5 V operation with t_AA = 10 ns maximum, ICC = 45 mA maximum, and ISB2 = 8 mA maximum across –40 °C to +85 °C. Electrical characteristics tables on page 6 confirm VOH ≥ 2.4 V and VOL ≤ 0.4 V at VCC = 4.5 V, ensuring robust TTL-level compatibility.

How does the ECC engine impact read cycle timing?

The ECC decoding adds no additional clock cycles or latency to the read path. t_AA = 10 ns includes full ECC detection and correction - corrected data appears on I/O0–I/O15 within the same access window as a standard SRAM. The ERR pin is absent in this variant, so no external polling or interrupt handling is required.