Infineon Technologies CY7C1041G18-15BVXI

Overview

CY7C1041G18-15BVXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), designed for high-reliability industrial memory subsystems operating at 1.65–2.2 V. It delivers 15 ns access time, 38 mA typical active current, and features an ERR output pin for real-time ECC event indication in read cycles. Used in mission-critical control modules requiring data integrity under extended temperature ranges.

For engineers reviewing the CY7C1041G18-15BVXI datasheet, CY7C1041G18-15BVXI pinout, CY7C1041G18-15BVXI application, or CY7C1041G18-15BVXI equivalent, key selection criteria include ECC-enabled data path integrity, 48-ball VFBGA (BVXI) package compatibility, multi-voltage support (1.65–2.2 V), and industrial-grade –40 °C to +85 °C operation with automatic CE power-down.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read operations without write-back-ERR pin asserts HIGH only upon correction. The memory array uses standard address decoding (A0–A17) and byte-level control via BHE/BLE for independent upper/lower 8-bit writes.

It supports three V_CC ranges: 1.65–2.2 V (15 ns speed grade), 2.2–3.6 V (10 ns), and 4.5–5.5 V (10 ns). The BVXI package variant is a 48-ball VFBGA (6 × 8 × 1.0 mm) with I/O[7:0] and I/O[15:8] ball mapping distinct from BVJXI, and includes no ERR pin-confirmed by pin configuration diagrams and ordering code definitions.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, Pb-free, JEDEC MO-276AC compliant (package ID BVXI).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-15ZIN, CY7C1041G18-15BVXI uniquely integrates ECC correction and ERR signaling in a compact VFBGA, enabling certified safety functions without external logic-critical for IEC 61508 and DO-254 deployments.

Availability

CY7C1041G18-15BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, railway signaling data caches, and medical imaging frame stores requiring stable component supply across extended temperature and radiation-prone environments.

Supply support for CY7C1041G18-15BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, focusing on automotive, industrial, and aerospace-grade semiconductor solutions with ISO/TS 16949 and IATF 16949 certified manufacturing.

CY7C1041G18-15BVXI belongs to Infineon's legacy Cypress SRAM product line, engineered specifically for industrial and transportation systems demanding ECC-protected, multi-voltage, low-power static memory with long-term supply assurance.

FAQ

Does CY7C1041G18-15BVXI support automatic error write-back after correction?

No. The device performs single-bit error correction during read cycles but does not automatically rewrite the corrected data back to the memory array. The ERR pin signals correction occurrence, and system firmware must handle any required write-back if persistent data repair is needed. This behavior is explicitly documented in Note 1 of the datasheet.

What is the function of NC pins in the BVXI package?

NC (No Connect) pins-such as A1, D1, G1, and H1 in the 48-ball VFBGA-are physically present but internally unconnected to the silicon die. They must remain unconnected on the PCB; routing traces or applying voltage to these balls violates the datasheet specification and may cause undefined behavior or damage.

Can CY7C1041G18-15BVXI operate at 2.5 V supply?

No. The "18" speed grade is specified only for the 1.65–2.2 V V_CC range (15 ns access time). Operation at 2.5 V falls within the 2.2–3.6 V range, which requires the "30" speed grade (e.g., CY7C1041G30-10BVXI) rated for 10 ns access. Using this part at 2.5 V violates electrical specifications and risks timing failure.

How does the ERR pin behave during a read cycle with no error?

The ERR pin remains in high-impedance (Hi-Z) state when no single-bit error is detected or corrected during a read cycle. It only drives HIGH (active) for the duration of the read access in which correction occurs-verified by the Truth Table on page 14 and ERR Output section on page 14 of the datasheet. No pull-up is required unless system logic demands defined idle-state voltage.