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Infineon Technologies CY7C1041G30-10BAJXE

Part No.:
CY7C1041G30-10BAJXE
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY7C1041G30-10BAJXE.pdf
Description:
IC SRAM 4MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,059

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Product details

Overview

CY7C1041G30-10BAJXE from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 4-Mbit static RAM with embedded ECC, organized as 256K × 16-bit, operating at 10 ns access time over –40 °C to +125 °C, with 2.2 V–3.6 V supply and TTL-compatible I/Os for use in engine control units and ADAS domain controllers.

For engineers reviewing the CY7C1041G30-10BAJXE datasheet, CY7C1041G30-10BAJXE pinout, CY7C1041G30-10BAJXE application, or CY7C1041G30-10BAJXE equivalent, key selection considerations include ECC-enabled single-bit error correction, automotive-E temperature support, 48-ball VFBGA package compatibility, and byte-level write enable via BHE/ BLE signals.

Technical Context

The CY7C1041G30-10BAJXE implements a full CMOS SRAM core with integrated ECC encoder/decoder logic that detects and corrects single-bit errors in real time without automatic write-back. It uses a single Chip Enable (CE) input and supports independent upper- and lower-byte writes via dedicated BHE and BLE controls.

Its timing architecture delivers guaranteed 10 ns tAA and tRC across the full automotive-E range, with HI-Z output control synchronized to OE, CE, BHE, and BLE transitions. The device maintains data retention down to 1.0 V and draws only 6 mA typical standby current (ISB2) under CMOS input conditions.

Key Specifications

ParameterValue and Actual Design Meaning
Memory size4 Mbit (256K words × 16-bit), enabling compact storage for firmware scratchpad or sensor buffer in space-constrained ECUs
Access time (tAA)10 ns maximum, supporting real-time deterministic read response in safety-critical control loops
ECC capabilityEmbedded single-bit error correction per word, reducing uncorrectable error risk in radiation-prone vehicle environments
Operating voltage2.2 V–3.6 V, compatible with modern low-voltage automotive power domains including 2.5 V and 3.3 V rails
Temperature gradeAutomotive-E: –40 °C to +125 °C, qualified for under-hood applications such as transmission control modules
Standby current (ISB2)6 mA typical at 3.6 V, minimizing quiescent power in always-on vehicle subsystems
Data retention voltage1.0 V minimum, allowing memory state preservation during brown-out or battery disconnect events

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant and Pb-free.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address inputs18-bit address bus supporting full 256K-word addressing; no internal multiplexing
I/O0–I/O15Bidirectional data lines16-bit parallel interface with TTL-compatible levels; all placed in HI-Z when CE, OE, BHE, or BLE are deasserted
CEChip EnableActive-low global enable; device fully deselected and enters low-power mode when HIGH
OEOutput EnableActive-low control for read data output; does not affect write path or ECC operation
WEWrite EnableActive-low signal initiating write cycle; write completes on first rising edge of WE, CE, or byte enable
BHEByte High EnableActive-low control for upper byte (I/O8–I/O15); enables partial writes without disturbing lower byte
BLEByte Low EnableActive-low control for lower byte (I/O0–I/O7); supports independent 8-bit updates in mixed-data systems
VCC, VSSPower and groundDual VCC pins improve noise immunity; multiple VSS balls reduce ground bounce in high-speed operation

Key Features

FeatureDesign Value
AEC-Q100 qualificationValidated for automotive-E stress testing including HTOL, TC, and ESD, enabling direct use in ASIL-B systems without requalification
Embedded ECC logicOn-die Hamming-code encoder/decoder corrects single-bit errors per 16-bit word without external controller overhead or latency penalty
Low-power standby modeISB2 = 6 mA typical at 3.6 V ensures minimal current draw during sleep states in always-on telematics modules
TTL-compatible I/ODirect interface with legacy microcontrollers and FPGAs without level-shifting, reducing BOM count and PCB area
Byte-select write architectureIndependent BHE/ BLE control allows efficient 8-bit updates in CAN message buffers or sensor register banks

Applications

Engine Control Unit (ECU)Advanced Driver Assistance Systems (ADAS)

Use Scenario: Real-time storage of calibrated lookup tables and transient sensor values during combustion cycle execution.

IC Role / Device Role / Timing Role: High-speed, ECC-protected SRAM serving as deterministic scratchpad memory for MCU-based closed-loop fuel injection control.

Use Value: 10 ns tAA ensures sub-cycle memory access; embedded ECC prevents silent corruption of torque maps under EMI-rich under-hood conditions.

Use Scenario: Buffering pre-fusion radar point cloud data before processing by SoC accelerator cores.

IC Role / Device Role / Timing Role: Low-latency, byte-accessible memory staging raw sensor frames with hardware-level data integrity assurance.

Use Value: BHE/ BLE enables selective update of metadata headers without rewriting full 16-bit payloads; automotive-E rating sustains operation near radar RF front-ends.

Transmission Control Module (TCM)Body Control Module (BCM)

Use Scenario: Storing gear-shift strategy parameters and real-time clutch pressure profiles during dynamic load changes.

IC Role / Device Role / Timing Role: Fault-tolerant SRAM holding mission-critical actuator command history with zero software ECC overhead.

Use Value: 1.0 V data retention preserves shift calibration during ignition cycling; ISB2 ≤ 6 mA extends battery life in park-mode monitoring.

Use Scenario: Caching door-lock status, lighting sequences, and LIN gateway message queues across multiple vehicle domains.

IC Role / Device Role / Timing Role: General-purpose, low-power SRAM providing shared memory space for multi-node coordination in distributed body electronics.

Use Value: 48-ball VFBGA footprint fits tight BCM layouts; 2.2 V–3.6 V operation accommodates wide-range battery voltage swings during cold cranking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV25616EDBLL-10MLINo embedded ECC; requires external error handling; 10 ns access, same 256K × 16 organizationSuitable for non-safety-critical infotainment subsystems where ECC is managed in softwareSelect if system-level ECC is already implemented and cost sensitivity outweighs on-die reliability benefits
MT45W8MW16BGX-107 IT:ADDR SDRAM, not SRAM; requires refresh circuitry; higher density but asynchronous interface complexityUsed in high-bandwidth display buffers where burst transfers justify DRAM overheadChoose only when bandwidth > 100 MB/s is required and controller supports DDR initialization and refresh management

Compared with IS61WV25616EDBLL-10MLI and MT45W8MW16BGX-107 IT:A, the CY7C1041G30-10BAJXE uniquely delivers hardware ECC, automotive-E qualification, and true zero-refresh SRAM behavior-critical for deterministic control applications where latency predictability and fault containment are mandatory.

Availability

CY7C1041G30-10BAJXE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, transmission control modules, and body control modules requiring stable component supply across extended automotive lifecycles.

Supply support for CY7C1041G30-10BAJXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and automotive ICs with strong emphasis on functional safety and reliability.

The CY7C1041G series belongs to Infineon's automotive SRAM portfolio, designed specifically to meet ASIL-B requirements in powertrain and chassis systems through integrated ECC, extended temperature operation, and AEC-Q100 compliance.

FAQ

Does CY7C1041G30-10BAJXE support automatic error correction write-back?

No. The device performs single-bit error correction on read operations but does not automatically rewrite corrected data to the memory array. Error detection and correction occur transparently during read cycles, and corrected data is presented on I/O lines without modifying the stored value unless explicitly rewritten by the host system.

What is the SER FIT rate for CY7C1041G30-10BAJXE?

The soft error rate (SER) is specified as <0.1 FIT/Mb (failures-in-time per megabit), measured under terrestrial cosmic ray exposure conditions. This value is derived from accelerated neutron irradiation testing and documented in Application Note AN88889, confirming suitability for automotive safety-critical applications.

Can CY7C1041G30-10BAJXE operate at 2.5 V supply?

Yes. The device is fully specified across 2.2 V–3.6 V, including 2.5 V nominal rails. All AC and DC parameters-including 10 ns access time, 40 mA active current, and 6 mA standby current-are guaranteed at 2.5 V within the automotive-E temperature range (–40 °C to +125 °C).

Is the 48-ball VFBGA package lead-free and RoHS compliant?

Yes. The CY7C1041G30-10BAJXE uses a Pb-free, RoHS-compliant 48-ball VFBGA package with matte tin surface finish. Reflow profile follows JEDEC J-STD-020D for MSL3 handling, and moisture sensitivity level is rated at Level 3 per J-STD-033.

CY7C1041G30-10BAJXE Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x8)

CY7C1041G30-10BAJXE FAQ

1.How can I place an order for CY7C1041G30-10BAJXE through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1041G30-10BAJXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1041G30-10BAJXE reliable?

The price and inventory of CY7C1041G30-10BAJXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041G30-10BAJXE is usually 5 days.

3.What payment methods are accepted for CY7C1041G30-10BAJXE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041G30-10BAJXE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1041G30-10BAJXE?

CY7C1041G30-10BAJXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1041G30-10BAJXE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1041G30-10BAJXE?

For technical support, including CY7C1041G30-10BAJXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041G30-10BAJXE requirements.

6.How does Aetrix verify that CY7C1041G30-10BAJXE is sourced from the original manufacturer or authorized distributors?

All CY7C1041G30-10BAJXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041G30-10BAJXE meets industry standards.

7.What is the process for return or replacement of CY7C1041G30-10BAJXE?

All CY7C1041G30-10BAJXE units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041G30-10BAJXE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1041G30-10BAJXE part is unused and in its original packaging.

Return procedure for CY7C1041G30-10BAJXE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1041G30-10BAJXE Tags

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