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Infineon Technologies CY7C1041G30-10BAJXET
- Part No.:
- CY7C1041G30-10BAJXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY7C1041G30-10BAJXET.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,209
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Product details
Overview
CY7C1041G30-10BAJXET from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 4-Mbit static RAM (256K × 16-bit) with embedded single-bit error-correcting code (ECC), 10 ns access time, and operation over –40 °C to +125 °C. It supports TTL-compatible I/O, 2.2–3.6 V supply, and dual-byte write control via BHE/ BLE for safety-critical ECUs.
For engineers reviewing the CY7C1041G30-10BAJXET datasheet, CY7C1041G30-10BAJXET pinout, CY7C1041G30-10BAJXET application, or CY7C1041G30-10BAJXET equivalent, key selection criteria include ECC-enabled data integrity in automotive memory subsystems, VFBGA-48 package thermal performance, low ISB2 standby current (6 mA typ), and compatibility with ASIL-B functional safety architectures.
Technical Context
The CY7C1041G30-10BAJXET integrates dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors on-the-fly during read operations without CPU intervention. Its architecture uses separate byte enable inputs (BHE/BLE) to support independent upper- and lower-byte writes, enabling efficient 8-bit peripheral interfacing within 16-bit bus systems.
All control signals-CE, OE, WE, BHE, and BLE-use standard TTL voltage thresholds and drive CMOS-compatible loads. The device enters automatic power-down mode when CE is deasserted, reducing ICC to 6 mA typical (ISB2) at 3.6 V while retaining data down to 1.0 V supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 4 Mbit (256K words × 16-bit); supports full-word parallel access for real-time firmware execution |
| Access time (tAA) | 10 ns max; enables direct interface with 100 MHz microcontrollers without wait states |
| ECC capability | Single-bit error correction per 16-bit word; reduces uncorrectable error rate to <0.1 FIT/Mb |
| Supply voltage | 2.2 V to 3.6 V; compatible with automotive 3.3 V rail and brown-out tolerant operation |
| Operating temperature | –40 °C to +125 °C (Automotive-E grade); validated for engine bay and ADAS ECU deployment |
| Standby current (ISB2) | 6 mA typical at 3.6 V; meets low-power requirements for always-on vehicle networks |
| Data retention voltage | 1.0 V minimum; preserves critical fault logs during battery disconnect events |
Pinout & Package
This device is packaged in a 48-ball Very Fine Pitch Ball Grid Array (VFBGA) with 0.5 mm pitch and 6.0 mm × 8.0 mm footprint. The package supports high-density PCB layouts and provides superior thermal resistance (θJA = 30.68 °C/W) compared to TSOP II alternatives.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256K-word addressing; no internal multiplexing |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; HI-Z when CE, OE, BHE, and BLE are all inactive |
| CE | Chip Enable | Active-low global enable; initiates all read/write cycles and controls power-down entry |
| OE | Output Enable | Active-low read strobe; gates output drivers only-does not affect ECC decoding latency |
| WE | Write Enable | Active-low write strobe; combined with CE and byte enables to define write window timing |
| BHE | Byte High Enable | Controls I/O8–I/O15; allows isolated 8-bit writes to upper byte without disturbing lower byte |
| BLE | Byte Low Enable | Controls I/O0–I/O7; enables independent lower-byte updates in mixed-data-width systems |
| VCC / VSS | Power / Ground | Dual VCC pins and multiple VSS balls ensure stable core voltage under transient load conditions |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | Hardware-accelerated single-bit correction per 16-bit word; eliminates need for external error-handling firmware overhead |
| Dual-byte write control | Independent BHE/BLE inputs enable atomic 8-bit updates-critical for CAN message buffers and sensor register maps |
| Automotive qualification | AEC-Q100 Grade 1 (–40 °C to +125 °C); qualified for use in powertrain, chassis, and ADAS control modules |
| Low-voltage data retention | Operates down to 1.0 V VCC; retains configuration and diagnostic logs during cold-cranking or battery sag |
| TTL-compatible signaling | Input thresholds match legacy microcontroller GPIOs; eliminates level-shifter requirements in retrofit designs |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
Use Scenario: Real-time storage of fuel injection timing tables and misfire detection logs in gasoline/diesel powertrain controllers. IC Role / Device Role / Timing Role: Primary non-volatile shadow RAM with ECC protection for safety-critical calibration data. Use Value: Prevents silent data corruption in long-term flash-to-RAM mapping, ensuring ASIL-B compliance per ISO 26262. | Use Scenario: Buffering radar point-cloud data between sensor fusion processor and vision subsystem in lane-keeping assist modules. IC Role / Device Role / Timing Role: High-speed scratchpad memory with deterministic 10 ns read latency for time-sensitive sensor preprocessing. Use Value: Enables sub-microsecond response to object proximity alerts without CPU polling overhead. |
| Electric Vehicle Battery Management System (BMS) | Automotive Infotainment Head Unit |
Use Scenario: Storing cell voltage sampling history and thermal gradient snapshots across 96-cell battery packs. IC Role / Device Role / Timing Role: Fault-tolerant working memory for state-of-charge estimation algorithms running on ARM Cortex-R5 cores. Use Value: ECC correction prevents erroneous SOC drift caused by cosmic-ray-induced bit flips in high-altitude operation. | Use Scenario: Caching navigation map tiles and voice recognition grammar models in head units with limited eMMC bandwidth. IC Role / Device Role / Timing Role: Low-latency SRAM co-processor cache supplementing main SoC DRAM subsystem. Use Value: Reduces UI frame stutter during concurrent Bluetooth audio streaming and turn-by-turn guidance rendering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV25616EDBLL-10BLI | No integrated ECC; requires external error handling; 10 ns access, 2.5–3.6 V supply | Suitable for non-safety-critical infotainment subsystems where cost is prioritized over fault tolerance | Select when ECC is managed in software or system-level redundancy suffices |
| MT45W8MW16BGX-107 IT:B | LPDDR2 SDRAM (not SRAM); higher density but requires refresh; 107 MHz clock, 1.2 V core | Used in high-throughput multimedia pipelines where burst bandwidth > 1.7 GB/s is required | Choose only if system already implements DDR2 controller and can tolerate refresh-induced latency jitter |
Compared with IS61WV25616EDBLL-10BLI and MT45W8MW16BGX-107 IT:B, the CY7C1041G30-10BAJXET uniquely delivers hardware ECC, automotive temperature range, and true zero-wait-state SRAM timing-making it irreplaceable in ASIL-B memory subsystems where deterministic behavior and data integrity are non-negotiable.
Availability
CY7C1041G30-10BAJXET is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, battery management systems, and infotainment head units requiring stable component supply across extended automotive lifecycles.
Supply support for CY7C1041G30-10BAJXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and security solutions, with global R&D and manufacturing infrastructure.
The CY7C1041G series belongs to Infineon's automotive SRAM portfolio, engineered specifically for functional safety-critical memory applications in powertrain, chassis, and driver assistance systems.
FAQ
Does CY7C1041G30-10BAJXET support automatic error correction during write operations?
No. The device performs ECC encoding on write and decoding/correction on read only. It does not implement automatic write-back on error detection, as explicitly stated in the datasheet Note 1. Error correction occurs transparently during read cycles, with corrected data presented at I/O pins without CPU involvement.
What is the maximum junction temperature this part can sustain during continuous operation?
The CY7C1041G30-10BAJXET has a maximum junction temperature of +150 °C, derived from its AEC-Q100 Automotive-E qualification (–40 °C to +125 °C ambient) and thermal resistance θJA = 30.68 °C/W. Under worst-case 3.6 V supply and full bus activity, junction temperature remains within spec when PCB copper area meets four-layer board guidelines in the datasheet.
Can BHE and BLE be asserted simultaneously for full 16-bit writes?
Yes. Asserting both BHE and BLE LOW enables full 16-bit write operations to I/O0–I/O15. The device treats simultaneous assertion as a standard word-write mode-identical to asserting CE and WE alone-but retains byte-select granularity for partial updates when needed.
Is the 48-ball VFBGA package RoHS and REACH compliant?
Yes. The CY7C1041G30-10BAJXET carries "Pb-free" marking per the datasheet and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Material declarations and substance reports are available through Infineon's Product Change Notification portal.
CY7C1041G30-10BAJXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x8)
CY7C1041G30-10BAJXET FAQ
1.How can I place an order for CY7C1041G30-10BAJXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041G30-10BAJXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041G30-10BAJXET reliable?
The price and inventory of CY7C1041G30-10BAJXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041G30-10BAJXET is usually 5 days.
3.What payment methods are accepted for CY7C1041G30-10BAJXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041G30-10BAJXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041G30-10BAJXET?
CY7C1041G30-10BAJXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041G30-10BAJXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041G30-10BAJXET?
For technical support, including CY7C1041G30-10BAJXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041G30-10BAJXET requirements.
6.How does Aetrix verify that CY7C1041G30-10BAJXET is sourced from the original manufacturer or authorized distributors?
All CY7C1041G30-10BAJXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041G30-10BAJXET meets industry standards.
7.What is the process for return or replacement of CY7C1041G30-10BAJXET?
All CY7C1041G30-10BAJXET units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041G30-10BAJXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041G30-10BAJXET part is unused and in its original packaging.
Return procedure for CY7C1041G30-10BAJXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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