Infineon Technologies CY7C1041G30-10BVJXI

Overview

CY7C1041G30-10BVJXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time across 2.2 V–3.6 V supply, featuring TTL-compatible I/Os, ERR output for error indication, and industrial-grade temperature range (–40 °C to +85 °C). It serves as high-reliability memory in mission-critical embedded controllers and telecom line cards where data integrity is enforced at the memory layer.

For engineers reviewing the CY7C1041G30-10BVJXI datasheet, CY7C1041G30-10BVJXI pinout, CY7C1041G30-10BVJXI application, or CY7C1041G30-10BVJXI equivalent, key selection criteria include ECC-enabled read reliability, dual-voltage support (2.2–3.6 V), 48-ball VFBGA package with I/O byte-swapped layout (BVJXI), and ERR pin assertion on single-bit correction events.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder logic adjacent to the memory array, performing real-time Hamming-code-based single-bit error detection and correction during every read cycle without CPU intervention. The ERR pin asserts HIGH only upon successful correction - not on detection alone - and does not support automatic write-back.

It uses a single chip-enable architecture with independent byte enables (BHE/BLE) for 8-bit sub-accesses, supports 1.0-V data retention, and maintains high-impedance I/O states when CE is HIGH or OE/BHE/BLE are deasserted. Timing is defined by tAA (10 ns), tCO (6 ns), and tHZ (3 ns) under VCC = 3.0 V, TA = 25 °C.

Key Specifications

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1.0 mm body, JEDEC-compliant BVJXI footprint. Ball pitch: 0.5 mm. I/O[7:0] and I/O[15:8] are swapped relative to standard BVXI - verified in Figure 3 and Note 7 of datasheet 001-91368 Rev. *N.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and MT48LC16M16A2P-6A:G, CY7C1041G30-10BVJXI delivers deterministic 10 ns access, zero-refresh operation, and hardware ECC - making it uniquely suitable for fault-tolerant embedded control where memory integrity must be guaranteed at silicon level.

Availability

CY7C1041G30-10BVJXI is available at Aetrix Electronics and suitable for avionics data recorders, industrial PLC memory modules, and telecom line cards requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant VFBGA packaging.

Supply support for CY7C1041G30-10BVJXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

CY7C1041G30-10BVJXI belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-integrity embedded systems demanding hardware ECC, multi-voltage flexibility, and industrial temperature resilience.

FAQ

Does CY7C1041G30-10BVJXI support automatic write-back after ECC correction?

No. The device detects and corrects single-bit errors during read operations and asserts the ERR pin, but it does not perform automatic write-back to the memory array. Correction is transient and applies only to the output data bus; the original corrupted bit remains unmodified in the array until a subsequent write cycle overwrites that location.

What is the functional difference between BVJXI and BVXI package variants?

BVJXI is JEDEC-compliant and swaps the physical ball assignments of I/O[7:0] and I/O[15:8] relative to BVXI. This allows backward PCB compatibility with legacy CY7C1041G layouts using BVXI, provided the layout accounts for the swapped byte lanes - confirmed in datasheet Figure 3 and Note 7.

Can the ERR pin be used as a general-purpose interrupt output?

Yes, but with constraints: ERR is an open-drain output that requires an external pull-up resistor and asserts HIGH only for the duration of the read cycle in which correction occurs. It does not latch or persist beyond the active read window, so sampling must occur synchronously with OE/CE timing.

Is CY7C1041G30-10BVJXI compatible with 1.8 V core logic interfaces?

Yes - it operates within the 1.65 V–2.2 V VCC range, with VIH(min) = 1.4 V and VOL(max) = 0.2 V at IOH = 0.1 mA, ensuring robust DC compatibility with 1.8 V LVTTL and LVCMOS logic families without level translation.