Infineon Technologies CY7C1041G30-10BVXI

Overview

CY7C1041G30-10BVXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring TTL-compatible I/Os, ERR output for error indication, and low standby current (6 mA typical). It serves as a fault-tolerant memory buffer in industrial control modules requiring data integrity under radiation-prone or long-life operation.

For engineers reviewing the CY7C1041G30-10BVXI datasheet, CY7C1041G30-10BVXI pinout, CY7C1041G30-10BVXI application, or CY7C1041G30-10BVXI equivalent, key selection factors include ECC-enabled read reliability, 48-ball VFBGA (6 × 8 × 1.0 mm) package compatibility, 10 ns timing at 3.0 V, and support for byte-level write enable via BHE/ BLE.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder logic adjacent to the memory array, performing real-time single-bit error correction on every read cycle without external logic. The ERR pin asserts HIGH only during detected-and-corrected single-bit errors - no automatic write-back or multi-bit error handling is implemented.

It supports three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V); the "30" suffix denotes 2.2–3.6 V operation with 10 ns speed grade. The BVXI package identifier confirms 48-ball VFBGA with non-swapped I/O ball mapping (I/O[7:0] on lower byte, I/O[15:8] on upper byte), distinct from BVJXI.

Key Specifications

Pinout & Package

48-ball VFBGA (6 × 8 × 1.0 mm) package with JEDEC-standard footprint and solder-ball pitch of 0.8 mm. Ball map follows non-swapped I/O configuration (I/O[7:0] on columns C/D/E, I/O[15:8] on columns F/G/H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with AS7C34096B-10TIN and IS61WV25616EDBLL-10MLI, CY7C1041G30-10BVXI uniquely delivers integrated ECC with observable error indication in the same VFBGA footprint - reducing BOM count, PCB area, and validation effort for safety-critical memory subsystems.

Availability

CY7C1041G30-10BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, railway signaling data caches, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.

Supply support for CY7C1041G30-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and reliable memory solutions for industrial and safety-critical applications.

CY7C1041G30-10BVXI belongs to Infineon's legacy Cypress SRAM portfolio, engineered specifically for high-integrity data storage in environments where radiation-induced soft errors or long-term data retention must be mitigated without external circuitry.

FAQ

Does CY7C1041G30-10BVXI support automatic error correction write-back?

No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory array. System firmware must handle any required write-back if persistent correction is needed.

What is the function of the NC pins in the 48-ball VFBGA package?

NC (No Connect) pins - such as balls A1, C1, D1, E1, F1, G1, H1, A2, A3, A4, A5, A6, A8, A9, A10, A11 - are physically present but not bonded to the die. They serve mechanical stability and thermal dissipation roles and must remain unconnected in PCB layout.

Can CY7C1041G30-10BVXI operate at 1.8 V?

No. The "30" speed grade is specified only for 2.2 V–3.6 V operation. For 1.65 V–2.2 V operation, the correct part is CY7C1041G18-15BVXI (15 ns), which is not pin-compatible due to different timing and voltage qualification.

Is the ERR pin active-high or open-drain?

The ERR pin is an open-drain output. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) to generate a HIGH signal during single-bit error detection and correction. When inactive, ERR remains in high-impedance state.