Infineon Technologies CY7C1041G30-10BVXIT
- Part No.:
- CY7C1041G30-10BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY7C1041G30-10BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1041G30-10BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) asynchronous static RAM with embedded single-bit error-correcting code (ECC), operating at 10 ns access time over 2.2 V–3.6 V supply, featuring ERR output for real-time error indication and TTL-compatible I/Os. It serves as a high-reliability memory buffer in industrial control modules requiring data integrity under radiation-prone or long-term operation conditions.
For engineers reviewing the CY7C1041G30-10BVXIT datasheet, CY7C1041G30-10BVXIT pinout, CY7C1041G30-10BVXIT application, or CY7C1041G30-10BVXIT equivalent, key selection criteria include ECC-enabled read reliability, 10 ns tAA timing at 3.0 V, VFBGA-48 package footprint compatibility, and ERR pin behavior during single-bit correction events.
Technical Context
The device implements a dedicated on-die ECC encoder/decoder pair that detects and corrects single-bit errors per 16-bit word without external logic. Error detection triggers the open-drain ERR output HIGH during read cycles, with no automatic write-back support.
It supports byte-level writes via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls, and enters low-power standby (ISB2 = 6 mA typical) when CE is deasserted under CMOS input conditions. Memory array organization is fixed at 256K words × 16 bits, with address inputs A0–A17.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 16-bit organization), enabling direct replacement of legacy 256K × 16 SRAMs without data bus reconfiguration |
| Access Time (tAA) | 10 ns at VCC = 3.0 V, supporting 100 MHz burst-free asynchronous interface timing in FPGA-attached control subsystems |
| ECC Function | Single-bit error correction per 16-bit word with ERR output assertion; SER FIT rate <0.1 FIT/Mb per AN88889 |
| Supply Voltage Range | 2.2 V–3.6 V (primary range), allowing interoperability with 3.3 V logic families and mixed-voltage system partitioning |
| Standby Current (ISB2) | 6 mA typical at VCC = 3.0 V, TA = 25 °C, enabling low-power hold mode in battery-backed industrial controllers |
| Package | 48-ball VFBGA (6 × 8 × 1.0 mm, BVXI grade), JEDEC-compliant footprint with 0.8 mm ball pitch for high-density PCB layout |
| I/O Interface | TTL-compatible inputs/outputs with VIH = 2.0 V min, VOL = 0.4 V max at IOL = 8 mA, ensuring robust noise margin in noisy industrial environments |
Pinout & Package
48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 6 mm × 8 mm × 1.0 mm body, 0.8 mm ball pitch, Pb-free, RoHS-compliant. Pin mapping conforms to Figure 2 in datasheet 001-91368 Rev. *N.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no internal latching - requires stable address during CE/OE assertion |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel data path; high-impedance state asserted when CE HIGH or OE/BLE/BHE deasserted |
| CE | Chip Enable | Active-low enable controlling device selection; initiates power-down (ISB2) when held HIGH under CMOS input conditions |
| OE | Output Enable | Active-low control enabling read data onto I/O bus; does not affect ECC operation or ERR assertion |
| WE | Write Enable | Active-low signal initiating write cycle; must be LOW with CE LOW and valid address/data present |
| BLE / BHE | Byte Low/High Enable | Independent active-low controls for writing lower (I/O0–I/O7) or upper (I/O8–I/O15) byte; enables partial-word updates |
| ERR | Error Indicator Output | Open-drain output asserted HIGH during single-bit error detection/correction in read cycle; requires external pull-up |
| VCC / VSS | Power / Ground | Dual VCC pins (B3, D3) and dual VSS pins (C2, E2) provide low-inductance supply routing for noise-sensitive SRAM core |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | On-die Hamming-code encoder/decoder corrects single-bit errors per 16-bit word without CPU intervention or firmware overhead |
| ERR output signaling | Dedicated open-drain pin provides hardware-level notification of correction event, enabling system-level logging or diagnostic flagging |
| Multi-voltage operation | Supports 2.2–3.6 V supply range with guaranteed 10 ns tAA, simplifying integration into 3.3 V industrial backplanes |
| Low-power standby | 6 mA typical ISB2 current at 3.0 V enables >10-year data retention in battery-hold applications per 1.0 V retention spec |
| VFBGA-48 packaging | Compact 6 × 8 mm footprint with 0.8 mm pitch reduces board area by ~40% vs. 44-pin TSOP II while improving thermal resistance (θJA = 31.35 °C/W) |
Applications
| Industrial PLC Memory Buffer | Radiation-Tolerant Telemetry Storage |
|---|---|
Use Scenario: Storing real-time I/O status and control registers in programmable logic controllers deployed in factory automation environments with EMI exposure. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer with ECC protection between ARM Cortex-M7 MCU and field I/O expansion modules. Use Value: Prevents silent data corruption in 24/7 operation; ERR pin enables early fault detection before corrupted values propagate to safety-critical outputs. |
Use Scenario: Holding telemetry packets in satellite subsystems where cosmic rays induce single-event upsets in memory cells. IC Role / Device Role / Timing Role: Radiation-hardened-by-design (RHBD) data storage element interfacing with UART-to-FPGA bridges. Use Value: Achieves <0.1 FIT/Mb soft-error rate without external scrubbing logic, reducing FPGA resource usage and power consumption. |
| Military Avionics Display Cache | Medical Imaging Frame Buffer |
Use Scenario: Caching rendered display frames in ruggedized cockpit displays where temperature cycling and vibration stress solder joints and memory cells. IC Role / Device Role / Timing Role: High-speed frame buffer accessed by graphics controller at 10 ns latency, with ECC verifying pixel data integrity pre-display. Use Value: Eliminates visible screen artifacts caused by bit flips; ERR assertion triggers frame re-render rather than display corruption. |
Use Scenario: Temporary storage of DICOM image tiles during CT/MRI reconstruction pipelines where data accuracy is diagnostic-critical. IC Role / Device Role / Timing Role: Burst-capable SRAM staging buffer between FPGA-based FFT engines and DDR4 main memory. Use Value: Guarantees pixel-perfect fidelity across multi-gigabyte reconstructions; ECC prevents misdiagnosis due to undetected memory errors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C34096B-10TIN | No embedded ECC; requires external Hamming logic or software correction; 10 ns tAA at 3.3 V | Lacks hardware ERR signaling; increases FPGA gate count and firmware complexity for error handling | Select only if ECC is implemented externally and board space allows larger TQFP-44 package |
| IS61WV25616EDBLL-10MLI | Includes ECC but no ERR output pin; 10 ns tAA at 3.3 V; 48-pin TSOP II package | Relies on status register polling instead of interrupt-driven error notification, increasing CPU overhead | Prefer when board layout constraints prohibit VFBGA or when legacy TSOP II socket reuse is required |
Compared with AS7C34096B-10TIN and IS61WV25616EDBLL-10MLI, CY7C1041G30-10BVXIT uniquely delivers both deterministic 10 ns ECC read latency and hardware ERR signaling in a space-optimized VFBGA, reducing system-level verification burden for safety-critical memory paths.
Availability
CY7C1041G30-10BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, radiation-tolerant telemetry storage, and medical imaging frame buffers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1041G30-10BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and aerospace applications.
CY7C1041G30-10BVXIT belongs to Infineon's legacy Cypress SRAM portfolio, designed specifically for high-integrity embedded systems where data reliability outweighs cost sensitivity and where hardware-accelerated ECC is mandatory.
FAQ
Does CY7C1041G30-10BVXIT support automatic error correction write-back?
No. The device performs single-bit error correction transparently during read cycles but does not automatically rewrite corrected data to the memory array. External logic or firmware must initiate a write cycle to persist the corrected value if required. This design minimizes write amplification and preserves memory endurance.
What is the function of the ERR pin during normal (error-free) operation?
During error-free reads, the ERR pin remains in high-impedance state and must be pulled up externally (typically 10 kΩ to VCC). It asserts HIGH only for the duration of a read cycle where a single-bit error is detected and corrected. No debouncing or filtering is required due to synchronous assertion timing.
Can CY7C1041G30-10BVXIT operate at 1.8 V?
No. The "30" suffix denotes the 2.2 V–3.6 V voltage grade. Operation at 1.8 V falls outside specification and violates the minimum 2.2 V requirement. For 1.65 V–2.2 V operation, the CY7C1041G18-15BVXIT variant must be used, which has 15 ns access time.
Is the VFBGA-48 package (BVXI) compatible with standard reflow profiles?
Yes. The Pb-free BVXI package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles with peak temperature ≤260 °C. Board layout must observe 0.8 mm ball pitch and use solder mask defined pads per Infineon's package drawing 001-91368.
CY7C1041G30-10BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1041G30-10BVXIT FAQ
1.How can I place an order for CY7C1041G30-10BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1041G30-10BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1041G30-10BVXIT reliable?
The price and inventory of CY7C1041G30-10BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041G30-10BVXIT is usually 5 days.
3.What payment methods are accepted for CY7C1041G30-10BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041G30-10BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1041G30-10BVXIT?
CY7C1041G30-10BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1041G30-10BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1041G30-10BVXIT?
For technical support, including CY7C1041G30-10BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041G30-10BVXIT requirements.
6.How does Aetrix verify that CY7C1041G30-10BVXIT is sourced from the original manufacturer or authorized distributors?
All CY7C1041G30-10BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041G30-10BVXIT meets industry standards.
7.What is the process for return or replacement of CY7C1041G30-10BVXIT?
All CY7C1041G30-10BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041G30-10BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1041G30-10BVXIT part is unused and in its original packaging.
Return procedure for CY7C1041G30-10BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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