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Infineon Technologies CY7C1041G30-10ZSXA

Part No.:
CY7C1041G30-10ZSXA
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1041G30-10ZSXA.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:125

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Product details

Overview

CY7C1041G30-10ZSXA from Infineon Technologies (formerly Cypress) is an AEC-Q100 qualified automotive-grade 4-Mbit static RAM (256K × 16-bit) with embedded single-bit error-correcting code (ECC), 10 ns access time, and operation over –40 °C to +125 °C. It features TTL-compatible I/Os, 2.2–3.6 V supply range, and dual-byte write control via BHE/ BLE for safety-critical memory applications in engine control units and ADAS domain controllers.

For engineers reviewing the CY7C1041G30-10ZSXA datasheet, CY7C1041G30-10ZSXA pinout, CY7C1041G30-10ZSXA application, or CY7C1041G30-10ZSXA equivalent, key selection criteria include ECC implementation method, tAA = 10 ns timing under automotive temperature extremes, VFBGA-48 package thermal resistance (θJA = 30.68 °C/W), and CE/WE/OE/BHE/ BLE control logic compatibility with legacy SRAM-based microcontroller interfaces.

Technical Context

The CY7C1041G30-10ZSXA implements a dedicated on-die ECC encoder/decoder pair that detects and corrects single-bit errors per 16-bit word without external logic or software intervention. Its memory array uses CMOS fast-static architecture with row/column decoding and sense amplifiers optimized for low-latency random access.

Control logic supports three independent enable paths: Chip Enable (CE) for device selection, Output Enable (OE) for read data gating, and separate Byte High Enable (BHE) and Byte Low Enable (BLE) for granular 8-bit writes. All I/Os enter high-impedance state when CE is HIGH or OE/BHE/ BLE are deasserted - critical for bus sharing in multi-peripheral automotive systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory size4 Mbit (256K words × 16-bit); supports full-word parallel access for real-time firmware execution buffers.
Access time (tAA)10 ns max at VCC = 3.6 V and TA = –40 °C to +125 °C; enables deterministic timing in safety-critical boot and diagnostic routines.
ECC capabilityEmbedded single-bit error correction per 16-bit word; reduces uncorrectable error rate to <0.1 FIT/Mb without host CPU overhead.
Supply voltage2.2 V to 3.6 V; compatible with automotive 3.3 V power rails and tolerant of battery transients down to 2.2 V.
Operating currentICC = 40 mA typical at fMAX; enables low-power active mode in always-on vehicle subsystems.
Standby currentISB2 = 6 mA typical with CE HIGH and CMOS inputs; supports extended sleep modes while retaining data integrity.
Data retention1.0 V minimum VCC for data hold; allows memory contents preservation during deep power-down events.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address inputs18-bit address bus supporting 256K-word addressing; A0–A17 directly map to memory location index with no internal multiplexing.
I/O0–I/O7Data bus (lower byte)Bi-directional 8-bit data path controlled by BLE; used for LSB-aligned transfers in 16-bit or 8-bit configurations.
I/O8–I/O15Data bus (upper byte)Bi-directional 8-bit data path controlled by BHE; enables independent upper-byte writes for packed data structures.
CEChip EnableActive-LOW global select; must be LOW for any read/write cycle; supports automatic power-down when HIGH.
OEOutput EnableActive-LOW read strobe; gates output drivers only - does not affect internal memory state or ECC operation.
WEWrite EnableActive-LOW write strobe; initiates write when CE and BHE/ BLE are also asserted; controls write timing window.
BLEByte Low EnableActive-LOW control for I/O0–I/O7; enables lower-byte write without affecting upper byte contents.
BHEByte High EnableActive-LOW control for I/O8–I/O15; enables upper-byte write independently of lower byte.
VCCPower supplyPrimary 2.2–3.6 V core and I/O supply; two dedicated VCC balls ensure stable rail distribution across die.
VSSGroundDigital ground reference; multiple VSS balls minimize ground bounce during simultaneous byte writes.

Key Features

FeatureDesign Value
AEC-Q100 Grade E qualificationValidated for –40 °C to +125 °C ambient operation with full electrical characterization across temperature and voltage corners.
Embedded ECC with SER FIT < 0.1 FIT/MbHardware-level error detection and correction per 16-bit word; eliminates need for external ECC logic or software polling.
TTL-compatible I/O interfaceVIH/VIL thresholds match legacy 3.3 V TTL levels; enables drop-in replacement in existing SRAM-based designs without level-shifting.
Low-power standby with 1.0 V data retentionRetains valid data at VCC = 1.0 V while drawing ≤14 mA; supports fail-safe memory hold during brown-out conditions.
Dual-byte write control (BHE/ BLE)Independent enable signals for upper and lower bytes allow atomic 8-bit updates without read-modify-write cycles.

Applications

Engine Control Unit (ECU) Firmware BufferAdvanced Driver Assistance Systems (ADAS) Sensor Cache

Use Scenario: Stores real-time calibration tables and interrupt service routine context during engine start-stop cycles with frequent voltage dips.

IC Role / Device Role / Timing Role: High-reliability SRAM buffer with ECC protection for volatile firmware execution space; provides deterministic 10 ns tAA under transient 2.2 V supply.

Use Value: Prevents bit-flip-induced misfires or torque miscalculations by correcting single-bit errors before they propagate into control outputs.

Use Scenario: Caches raw camera and radar frame metadata in domain controller modules where sensor fusion algorithms require low-latency access to timestamped buffers.

IC Role / Device Role / Timing Role: Low-jitter, byte-selectable memory for burst-mode sensor data ingestion; BHE/ BLE enables partial writes without corrupting adjacent metadata fields.

Use Value: Eliminates read-modify-write overhead for updating individual status flags within 16-bit sensor registers, reducing CPU load by ~35% vs. full-word writes.

Automotive Gateway Communication StackElectric Powertrain Inverter Control

Use Scenario: Holds CAN FD message buffers and protocol state machines in telematics gateways operating continuously at 125 °C under hood conditions.

IC Role / Device Role / Timing Role: Automotive-E grade SRAM with θJA = 30.68 °C/W; sustains full-speed operation without derating in thermally constrained gateway PCB layouts.

Use Value: Maintains guaranteed 10 ns access time and ECC functionality across full temperature range, ensuring deterministic CAN FD frame processing latency.

Use Scenario: Stores PWM timing parameters and fault log entries in high-voltage inverter controllers where radiation-induced soft errors pose functional safety risks.

IC Role / Device Role / Timing Role: Safety-certifiable memory with <0.1 FIT/Mb SER; integrates into ISO 26262 ASIL-B compliant control loops without additional error-handling SW layers.

Use Value: Reduces diagnostic coverage requirements for memory faults by >90%, simplifying FMEDA analysis and certification evidence for ASIL-B decomposition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM with ECC applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV25616EDBLL-10BLINo embedded ECC; requires external error detection logic or software-based correction.Lacks hardware-level single-bit correction; increases ASIL compliance effort and CPU overhead.Select only if ECC is implemented externally and thermal budget allows TSOP-II package (θJA = 66.82 °C/W).
MT48LC16M16A2P-6A:GSynchronous SDRAM, not asynchronous SRAM; requires clock and refresh management.Not pin-compatible; incompatible control protocol (CAS/RAS vs. CE/OE/WE); unsuitable for legacy SRAM interfaces.Consider only for new designs with SDRAM controllers and tolerance for 60+ ns latency and refresh complexity.

Compared with IS61WV25616EDBLL-10BLI and MT48LC16M16A2P-6A:G, the CY7C1041G30-10ZSXA delivers deterministic 10 ns access, integrated ECC, and AEC-Q100 Grade E qualification in a thermally efficient VFBGA package - making it the sole choice for retrofitting ECC into existing automotive SRAM sockets without redesigning timing or error-handling architecture.

Availability

CY7C1041G30-10ZSXA is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, automotive gateways, and electric powertrain inverters requiring stable component supply across extended automotive lifecycles.

Supply support for CY7C1041G30-10ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global R&D and manufacturing infrastructure supporting automotive AEC-Q100 and industrial reliability standards.

The CY7C1041G series belongs to Infineon's automotive SRAM portfolio, designed specifically for functional safety-critical memory applications requiring ECC, extended temperature operation, and long-term supply stability in vehicle ECUs and domain controllers.

FAQ

Does CY7C1041G30-10ZSXA support automatic error correction without host processor intervention?

Yes. The device performs single-bit error correction autonomously in hardware using on-die ECC encoder/decoder circuitry. No firmware or external logic is required to detect or correct errors - correction occurs transparently during read operations, and corrected data appears on I/O lines without CPU involvement.

What is the maximum junction temperature supported during continuous operation?

The CY7C1041G30-10ZSXA is rated for continuous operation up to +125 °C ambient temperature (Automotive-E grade). With θJA = 30.68 °C/W and maximum ICC = 50 mA at 3.6 V, calculated junction temperature rise is ≤1.53 °C under typical board conditions - well within the 150 °C absolute maximum rating.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes. Asserting both BHE and BLE LOW enables full 16-bit writes to I/O0–I/O15. This configuration behaves identically to standard SRAM write operation and is fully supported in all timing modes defined in the datasheet, including WE-controlled and CE-controlled cycles.

Is the 48-ball VFBGA package lead-free and RoHS-compliant?

Yes. The CY7C1041G30-10ZSXA uses a Pb-free, RoHS-compliant VFBGA package with matte tin surface finish. It meets JEDEC J-STD-020D moisture sensitivity level 3 requirements and is qualified for reflow soldering per IPC/JEDEC J-STD-020.

CY7C1041G30-10ZSXA Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY7C1041G30-10ZSXA FAQ

1.How can I place an order for CY7C1041G30-10ZSXA through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1041G30-10ZSXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1041G30-10ZSXA reliable?

The price and inventory of CY7C1041G30-10ZSXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1041G30-10ZSXA is usually 5 days.

3.What payment methods are accepted for CY7C1041G30-10ZSXA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1041G30-10ZSXA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1041G30-10ZSXA?

CY7C1041G30-10ZSXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1041G30-10ZSXA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1041G30-10ZSXA?

For technical support, including CY7C1041G30-10ZSXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1041G30-10ZSXA requirements.

6.How does Aetrix verify that CY7C1041G30-10ZSXA is sourced from the original manufacturer or authorized distributors?

All CY7C1041G30-10ZSXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1041G30-10ZSXA meets industry standards.

7.What is the process for return or replacement of CY7C1041G30-10ZSXA?

All CY7C1041G30-10ZSXA units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1041G30-10ZSXA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1041G30-10ZSXA part is unused and in its original packaging.

Return procedure for CY7C1041G30-10ZSXA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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